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    2SA2037 2SC5694

SANYO[Sanyo Semicon Device]
Part No. 2SA2037 2SC5694
OCR Text ...ings (-50)60 (-)50 (-)6 (-)7 (-)10 (-)1.2 1.2 10 150 -55 to +150 Unit V V V A A A W W C C Any and all SANYO products described or contain...1000 0 0.2 0.4 0.6 Ta= 75C 25C --25 C 0.8 1.0 1.2 IT02348 Base-to-Emitter Volt...
Description DC / DC Converter Applications

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    2SA2039 2SC5706 2SC5706TP-FA 2SA2039TP-FA

SANYO[Sanyo Semicon Device]
SANYO SEMICONDUCTOR CO LTD
Sanyo Electric Co.,Ltd.
Part No. 2SA2039 2SC5706 2SC5706TP-FA 2SA2039TP-FA
OCR Text ...ny TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 30101 TS IM TA-3232 No.6912-1/5 2SA2039 / 2SC5706 Spe...1000 7 5 IT00154 1000 Base-to-Emitter Voltage, VBE -- V hFE -- IC hFE -- IC 2SC5706 VCE...
Description Low-Power, Single/Dual-Voltage &#181;P Reset Circuits with Capacitor-Adjustable Reset Timeout Delay
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 5A I(C) | TO-251VAR
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 5A I(C) | TO-252VAR
Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay
PNP/NPN Epitaxial Planar Silicon Transistors
NPN Epitaxial Planar Silicon Transistors High Current Switching Applications
PNP Epitaxial Planar Silicon Transistors High Current Switching Applications
5000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR

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    2SA2040 2SC5707 C5707 2SA2040TP 2SA2040TP-FA 2SC5707TP-FA 2SC5707FA

SANYO[Sanyo Semicon Device]
Matsshita / Panasonic
Part No. 2SA2040 2SC5707 C5707 2SA2040TP 2SA2040TP-FA 2SC5707TP-FA 2SC5707FA
OCR Text ...ny TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 30101 TS IM TA-3233 No.6913-1/5 2SA2040/2SC5707 Speci...1000 7 5 IT00208 1000 hFE -- IC Base-to-Emitter Voltage, VBE -- V hFE -- IC 2SA2040 V...
Description PNP Epitaxial Planar Silicon Transistors High Current Switching Applications
PNP / NPN Epitaxial Planar Silicon Transistors
PNP/NPN Epitaxial Planar Silicon Transistors
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 8A I(C) | TO-251VAR
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 8A I(C) | TO-252VAR
Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay

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    2SA2043 2SC5709 2SA2043TP-FA 2SC5709TP-FA

Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SA2043 2SC5709 2SA2043TP-FA 2SC5709TP-FA
OCR Text ...ny TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52101 TS IM TA-3248 No.6914-1/5 2SA2043 / 2SC5709 Spe...1000 7 5 IT00172 1000 hFE -- IC Base-to-Emitter Voltage, VBE -- V hFE -- IC Ta=75C ...
Description CABLE ASSEMBLY; UHF MALE TO UHF MALE; 50 OHM, RG58C/U COAX 直流/直流转换器应
NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 10A I(C) | TO-252VAR
TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 10A I(C) | TO-251VAR

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    2SA2044 2SC5710 2SA2044FA 2SC5710TP-FA

SANYO[Sanyo Semicon Device]
Matsshita / Panasonic
Part No. 2SA2044 2SC5710 2SA2044FA 2SC5710TP-FA
OCR Text ...ny TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52101 TS IM TA-3249 No.6915-1/5 2SA2044 / 2SC5710 Spe...1000 7 5 IT00190 1000 hFE -- IC Base-to-Emitter Voltage, VBE -- V hFE -- IC 2SA2044 V...
Description Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 9A I(C) | TO-252VAR
DC / DC Converter Applications
PNP/NPN Epitaxial Planar Silicon Transistors
PNP / NPN Epitaxial Planar Silicon Transistors
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications

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    2SA2048

Rohm CO.,LTD.
ROHM[Rohm]
Part No. 2SA2048
OCR Text ...lector output capacitance Cob - 10 - pF VCB= -10V, IE=0A, f=1MHz Ton - 30 - ns IC= -1.0A Turn-on time IB1= -0.1A Tstg - 100 - ns IB2=0.1A St...1000 COLLECTOR CURRENT : IC (A) -1 DC CURRENT GAIN : hFE SWITCHING TIME : (ns) 10ms 1...
Description Medium power transistor (−30V, −1.0A)
Medium power transistor (-30V, -1.0A)

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    2SA2049

ROHM[Rohm]
Part No. 2SA2049
OCR Text ...ctrical characteristic curves -10 COLLECTOR CURRENT : IC (A) 1000 1ms 10ms SWITCHING TIME : (ns) -1 100ms DC -0.1 DC CURRENT GAIN : hFE Ta=25C VCC= -25V IC/IB=10/1 Tstg 1000 VCE= -2V 100 Ta=125C Ta=25C Ta= -40C ...
Description MEDIUM POWER TRANSISTOR

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    2SA2056

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2056
OCR Text ...e Storage temperature range t = 10 s DC DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC (Note 1) Tj Tstg Rating -50 -50 -7 -2.0 -3.5 -200 1000 625 150 -55 to 150 Unit V V V A mA mW C C JEDEC JEITA TOSHIBA TO-92 2-3S1A Weight: 0.01 g (...
Description TOSHIBA Transistor Silicon PNP Epitaxial Type

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    2SA2057

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2057
OCR Text ...fT ton tstg tf Conditions IC = -10 mA, IB = 0 VCB = -60 V, IE = 0 VCE = -60 V, IB = 0 VEB = -6 V, IC = 0 VCE = -4 V, IC = -1 A VCE = -4 V, I...1000 Ta = 100C -10 I CP t = 10 ms IC -1 t=1s t = 1 ms 100 25C -25C 10 - 0.1 ...
Description Silicon PNP epitaxial planar type

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    2SA2058

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2058
OCR Text ...torage temperature range DC t = 10 s DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC (Note) Tj Tstg Rating -20 -10 -7 -1.5 -2.5 -150 500 750 150...1000 25 Ta = 100C Collector current -1.2 -10 -8 -6 -4 IB = -2 mA DC current gain -...
Description TOSHIBA Transistor Silicon PNP Epitaxial Type

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