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  200 183 166 143 Datasheet PDF File

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    Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Part No. FH102 1282
OCR Text ...1MHz Ratings min typ max 1.0 10 200 Unit A A 90 0.7 0.95 1.0 7 0.75 0.5 mV GHz pF pF 5 1.2 Continued on next page. SANY...183 S12 72.6 59.2 44.5 39.1 38.0 38.6 40.3 42.5 45.0 47.3 49.2 S22 0.945 0.833 0.637 0.515 0.454 0...
Description High-Frequency Low-Noise Amp/ Differential Amp Applications
NPN Epitaxial Planar Silicon Composite Transistor
From old datasheet system
High-Frequency Low-Noise Amp, Differential Amp Applications

File Size 65.75K  /  5 Page

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    2SC5434 2SC5434-T1

NEC[NEC]
NEC Corp.
Part No. 2SC5434 2SC5434-T1
OCR Text ...RENT GAIN vs. COLLECTOR CURRENT 200 VCE = 3 V 20 140 A 120 A DC Current Gain - hFE 100 15 100 A 80 A 50 10 60 A 40 ...183 0.190 0.197 0.204 0.215 ANG -23.3 -42.6 -60.3 -72.1 -80.9 -89.8 -99.4 -109.3 -119.5 -133.1 -147....
Description Reduced noise high frequency amplification transistor
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
High-Frequecy Low-Noise Amplifier NPN Transistor(高频低噪声放大器NPN晶体

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    SANYO[Sanyo Semicon Device]
Part No. FH202
OCR Text ...s 20 10 2 70 150 20 12 2 50 150 200 150 -55 to +150 0.2 0.25 1 : Collector1 2 : Emitter1 3 : Collector2 4 : Base2 5 : Emitter2 6 : ...183 S12 72.6 59.2 44.5 39.1 38.0 38.6 40.3 42.5 45.0 47.3 49.2 | S22 | 0.945 0.833 0.637 0.515 0.45...
Description NPN Epitaxial Planar Silicon Composite Transistor VCO OSC Circuit Applications

File Size 80.88K  /  9 Page

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    NE6501077

NEC[NEC]
ETC
Part No. NE6501077
OCR Text ...= 1.0 A Id (mA) 4 000 Pout 3 200 Pout - Output Power - dBm 39 36 Id 2 400 33 1 600 30 800 27 20 23 26 29...183 1.939 1.722 1.556 1.545 1.436 1.328 1.243 1.160 1.106 1.044 0.992 0.951 0.921 0.882 0.858 0.825 ...
Description 10 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
10 W L S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

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    2SC5226A

Sanyo Semicon Device
Part No. 2SC5226A
OCR Text ...5V, IC=7mA, ZO=50 Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.720 0.612 0.497 0.456 0.440 0.436 0.434 0.433 0.433 0.43...183 S12 72.6 59.2 44.5 39.1 38.0 38.6 40.3 42.5 45.0 47.3 49.2 S22 0.945 0.833 0.637 0.515 0.454 0.4...
Description VHF to UHF Wide-Band Low-Noise Amplifier Applications

File Size 61.74K  /  6 Page

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    2SC5191 2SC5191-T1 2SC5191-T2

NEC Corp.
NEC[NEC]
Part No. 2SC5191 2SC5191-T1 2SC5191-T2
OCR Text ... IC PT Tj Tstg RATING 9 6 2 100 200 150 -65 to +150 UNIT V V V mA mW C C This device uses radio frequency technology. Take due precaution...183 0.196 0.205 0.211 0.221 0.228 0.242 0.252 0.261 0.268 S12 ANG 70.2 63.9 52.7 47.8 44.7 43.8 42.1...
Description ECONOLINE: RY & RX - Controllable Output- 1kVDC Isolation- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No External Components- Fully Encapsulated- Efficiency to 70%
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

File Size 55.92K  /  12 Page

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    NEC, Corp.
NEC Corp.
NEC[NEC]
Part No. 2SC4570 2SC4570-T1 2SC4570-T2 2SC4570T74-T2 2SC4570T72-T2 2SC4570T73-T2
OCR Text ...IN. TYP. MAX. 0.1 0.1 0.5 200 UNIT TEST CONDITIONS VCB = 15 V, IE = 0 VEB = 1 V, IC = 0 hFE = 10, IC = 5 mA VCE = 5 V, IC = 5 mA...183 .193 .201 .210 .219 .229 .239 .247 .258 .266 .273 .284 .291 .299 ANG 76.9 68.3 62.6 60.4 59.2 58...
Description NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD NPN硅外延晶体管超小型模
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
128 x 128 pixel format, LED or EL Backlight available

File Size 65.16K  /  8 Page

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    C5191

NEC
Part No. C5191
OCR Text ... IC PT Tj Tstg RATING 9 6 2 100 200 150 -65 to +150 UNIT V V V mA mW C C This device uses radio frequency technology. Take due precaution...183 0.196 0.205 0.211 0.221 0.228 0.242 0.252 0.261 0.268 S12 ANG 70.2 63.9 52.7 47.8 44.7 43.8 42.1...
Description Search --To 2SC5191

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    UPA803 UPA803T UPA803T-T1

NEC[NEC]
Part No. UPA803 UPA803T UPA803T-T1
OCR Text ... hFE1/hFE2 60 3.0 5.5 0.7 200 GHz 0.9 pF dB VCE = 5 V, IC = 5 mA, f = 1 GHz VCE = 5 V, IC = 5 mA A smaller value among hFE of hFE1 ...183 .193 .201 .210 .219 .229 .239 .247 .258 .266 .273 .284 .291 .299 S12 ANG 76.9 68.3 62.6 60.4 59....
Description NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

File Size 56.84K  /  8 Page

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    Toshiba
Part No. TOSHIBA_MEMORY
OCR Text ...CFTL-80 143 MHz * :LVTTL 200 MHz TC59S6432 DFT/DFTL-50 125 MHz TC59S6432 DFT/DFTL-80 TC59S6432 DFT/DFTL-54 TC59S6432 DFT/DFTL-60 TC59S6432 DFT/DFTL-70 :LVTTL 143 MHz 32M x 4 Synchronous DRAM 133 MHz TC59SM704AFT...
Description GENERAL CATALOG

File Size 511.64K  /  29 Page

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