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2170.0 Datasheet PDF File

For 2170.0 Found Datasheets File :: 2003 Search Time::1.625ms
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				Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] Freescale (Motorola)
Part No.	MRF21045 MRF21045LR3 MRF21045LSR3 MRF21045R3 MRF21045SR3
OCR Text	...s with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s...0.01% Probability on CCDF. Output Power -- 10 Watts Avg. Efficiency -- 23.5% Gain -- 15 dB IM3 -- - ...
Description	RF Power Field Effect Transistors S BAND, Si, N-CHANNEL, RF POWER, MOSFET 2170 MHz, 45 W, 28 V Lateral N–Channel RF Power MOSFET
File Size	546.66K / 12 Page	View it Online	Download Datasheet

				ELANTEC[Elantec Semiconductor]
Part No.	EL2270CN EL2270CS EL2170C EL2170CN EL2170CS EL2170CW EL2470CN EL2470CS
OCR Text	...urrent to voltage converters 2170 - 1 EL2170C SOT23-5 EL2470C SO P-DIP January 1996 Rev B Ordering Information Part No Temp ...0 Common Mode Rejection Ratio b Input Current Common Mode Rejection PSRR b IPSR Power Sup...
Description	70 MHz/1 mA Current Mode Feedback Amplifiers
File Size	317.33K / 16 Page	View it Online	Download Datasheet

				Ericsson Microelectronics ERICSSON[Ericsson]
Part No.	PTF10119
OCR Text	... VDD = 28 V IDQ = 160 mA f = 2170 MHz Input Power (Watts) Package 20222 Maximum Ratings Parameter Drain-Source Voltage Gate-So...0.31 -40 to +150 3.2 Unit Vdc Vdc C Watts W/C C C/W e 1 PTF 10119 Electrical Characteris...
Description	12 Watts, 2.1.2 GHz GOLDMOS Field Effect Transistor 12 Watts, 2.1-2.2 GHz GOLDMOS Field Effect Transistor
File Size	140.94K / 4 Page	View it Online	Download Datasheet

				Ericsson Microelectronics ERICSSON[Ericsson]
Part No.	PTF10134
OCR Text	...DD = 28 V IDQ = 1.3 A Total f = 2170 MHz 16 8 0 10 12 14 Input Power (Watts) Package 20250 RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, POUT = 30 W, IDQ = 1.3 A Total, f = 2.17 GHz) Power Output at...
Description	100 Watts, 2.1.2 GHz GOLDMOS Field Effect Transistor 100 Watts, 2.1-2.2 GHz GOLDMOS Field Effect Transistor
File Size	317.17K / 7 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	PTF210301 PTF210301A PTF210301E
OCR Text	2170 MHz Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full g...0 W - Gain = 16 dB - Efficiency = 25% - IM3 = -37 dBc Typical CW performance - Output power at P-1dB...
Description	LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz LDMOS RF Power Field Effect Transistor 30 W 2110-2170 MHz
File Size	333.91K / 8 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	PTF210451 PTF210451E
OCR Text	2170 MHz Description The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full go...0.01% CCDF Characteristic Intermodulation Distortion Gain Drain Efficiency Symbol IMD Gps D...
Description	LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz LDMOS RF Power Field Effect Transistor 45 W 2110-2170 MHz
File Size	402.88K / 8 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	PTF210901 PTF210901E
OCR Text	2170 MHz Description The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full g...0 dB, 3.84 MHz BW -25 30 25 IM3 -35 20 -40 15 -45 Gain -50 -55 39 40 41 42 43 44 ACPR 10 5 Drain Ef...
Description	LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz
File Size	262.17K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	UPC832 UPC832C UPC832G2 UPC4062 UPC4062C UPC4062G2
OCR Text	...co.jp (03)3454-1111 (052)222-2170 (052)222-2190 (06) 945-3178 (06) 945-3200 (06) 945-3208 (011)251-5599 (022)267-8740 (019)651-4344 (0249)23-5511 (0246)21-5511 (0258)36-2155 (029)226-1717 (0298)23-6161 (027)326-1255 (0276)46-4011 (028)62...
Description	Bipolar Analog Integrated Circuit
File Size	98.35K / 12 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SPD50N03S2-07
OCR Text	...DS =25V, f=1MHz 30 - S 2170 pF 1000 230 21 54 40 38 ns VDD =15V, VGS =10V, ID =50A, RG =6.8 - 7.9 14.1 35 5.2 10.5 21.1...0.9 41 46 50 200 1.3 51 58 A V ns nC Page 3 2003-05-09 SPD50N03S2-07 1 Power diss...
Description	OptiMOS Power-Transistor 的OptiMOS功率晶体 Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, DPAK, RDSon = 7.3mOhm, 50A, NL
File Size	261.42K / 8 Page	View it Online	Download Datasheet

				Freescale (Motorola) MOTOROLA[Motorola, Inc]
Part No.	MRF21085 MRF21085LSR3 MRF21085R3 MRF21085SR3
OCR Text	...s with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s...0.01% Probability on CCDF. Output Power -- 19 Watts Avg. Power Gain -- 13.6 dB Efficiency -- 23% IM3...
Description	2170 MHz, 90 W, 28 V Lateral N–Channel RF Power MOSFET RF Power Field Effect Transistors
File Size	558.64K / 12 Page	View it Online	Download Datasheet

For 2170.0 Found Datasheets File :: 2003 Search Time::1.625ms
Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |