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Xian Semipower Electronic Technology Co., Ltd.
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| Part No. |
SW10N60
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| OCR Text |
...notes : 1. v ds = 50v 2. 250us pulse test i d , drain current [a] v gs , gate-source voltage [v] 0 5 10 15 20 25 0.0 0.5 1.0 1.5 2.0 2.5 v gs = 20v v gs = 10v ? ? n o t e : t j = 25 o c r ds(on) , d r a i n - s o u r c e ... |
| Description |
N-channel MOSFET
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| File Size |
755.59K /
7 Page |
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it Online |
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Xian Semipower Electronic Technology Co., Ltd.
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| Part No. |
SW2N65
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| OCR Text |
...notes : 1. v ds = 40v 2. 250us pulse test i d , drain current [a] v gs , gate-source voltage [v] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 -1 10 0 150 o c *. notes : 1. v gs = 0v 2. 250us pulse test 25 o c i dr , reverse drain curre... |
| Description |
N-channel MOSFET
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| File Size |
705.72K /
7 Page |
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it Online |
Download Datasheet |
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Xian Semipower Electronic Technology Co., Ltd.
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| Part No. |
SW2N60 SWD2N60
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| OCR Text |
...notes : 1. v ds = 40v 2. 250us pulse test i d , drain current [a] v gs , gate-source voltage [v] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 -1 10 0 150 o c *. notes : 1. v gs = 0v 2. 250us pulse test 25 o c i dr , reverse drain curre... |
| Description |
N-channel MOSFET (TO-251 , TO-252)
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| File Size |
681.52K /
7 Page |
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it Online |
Download Datasheet |
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Xian Semipower Electronic Technology Co., Ltd.
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| Part No. |
SW2N60
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| OCR Text |
...notes : 1. v ds = 40v 2. 250us pulse test i d , drain current [a] v gs , gate-source voltage [v] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 -1 10 0 150 o c *. notes : 1. v gs = 0v 2. 250us pulse test 25 o c i dr , reverse drain curre... |
| Description |
N-channel MOSFET (TO-220F , TO-220)
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| File Size |
708.73K /
7 Page |
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it Online |
Download Datasheet |
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SAMWIN
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| Part No. |
SW20N60
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| OCR Text |
...notes : 1. v ds = 50v 2. 250us pulse test i d , drain current [a] v gs , gate-source voltage [v] 0 5 10 15 20 25 0.0 0.5 1.0 1.5 2.0 2.5 v gs = 20v v gs = 10v ? ? n o t e : t j = 25 o c r ds(on) , d r a i n - s o u r c e ... |
| Description |
N-channel Power MOSFET
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| File Size |
719.85K /
7 Page |
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it Online |
Download Datasheet |
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SAMWIN
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| Part No. |
SW2N65
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| OCR Text |
...notes : 1. v ds = 40v 2. 250us pulse test i d , drain current [a] v gs , gate-source voltage [v] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 -1 10 0 150 o c *. notes : 1. v gs = 0v 2. 250us pulse test 25 o c i dr , reverse drain curre... |
| Description |
N-channel MOSFET
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| File Size |
726.89K /
7 Page |
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it Online |
Download Datasheet |
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Hynix
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| Part No. |
H27U2G6F2C H27U2G8F2C
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| OCR Text |
...rogram time(3.0v/1.8v): 200us / 250us (typ) - multi-page program time (2 pages): 200us / 250us (3.0v/1.8v, typ.) block erase / multiple block erase - block erase time: 3.5 ms (typ) - multi-block erase time (2 blocks): 3.5ms/ 3.5ms (3.... |
| Description |
2Gb NAND FLASH
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| File Size |
1,004.78K /
63 Page |
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it Online |
Download Datasheet |
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