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DYNEX SEMICONDUCTOR LTD
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| Part No. |
DIM400XSM65-K000
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| OCR Text |
...off turn-off energy loss v ce =3600v 1450 mj t d(on) turn-on delay time r g(on) =6.2 w r g(off) =18 w 900 ns t r rise time c ge =44nf 250 ns e on turn-on energy loss l ~200nh 3000 mj q g gate charge 8 uc q rr diode reverse recovery char... |
| Description |
400 A, 6300 V, N-CHANNEL IGBT
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| File Size |
138.22K /
8 Page |
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it Online |
Download Datasheet
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Mitsubishi Electric Corporation
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| Part No. |
FGC3500AX-120DS
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| OCR Text |
...it Conditions VDM = 6000V, VD = 3600v, VRG = 20V diGQ/dt = 6000A/s, Tj = 25/125C CC = 6F, LC = 0.3H Applied for all conduction angles f = 60Hz, sinewave = 180, Tf = 70C One half cycle at 60Hz, Tj = 125C VD = 3600v, IT = 3500A, IGM= 200A, T... |
| Description |
Gate Commutated Turn-off (GCT) Thyristors/Gate Drive Units
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| File Size |
48.31K /
3 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric Corporation
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| Part No. |
GCU35AA-120
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| OCR Text |
...ht Conditions VDM = 6000V, VD = 3600v, VRG = 20V, LC = 0.3H Tj = 25/125C, With GU-C40 (see Fig. 1, 3) Applied for all condition angles f = 60Hz, sinewave = 180, Tf = 70C One half cycle at 60Hz, Tj = 125C Start VD = 3600v, IT = 3500A, Tj = ... |
| Description |
Gate Commutated Turn-off (GCT) Thyristors/Gate Drive Units
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| File Size |
69.14K /
5 Page |
View
it Online |
Download Datasheet |
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Mitsubishi Electric Corporation
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| Part No. |
GCU35AB-120
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| OCR Text |
...ht Conditions VDM = 6000V, VD = 3600v, VRG = 20V, LC = 0.3H Tj = 25/125C, With GU-E40 (see Fig. 1, 3) Applied for all condition angles f = 60Hz, sinewave = 180, Tf = 70C One half cycle at 60Hz, Tj = 125C Start VD = 3600v, IT = 3500A, Tj = ... |
| Description |
Gate Commutated Turn-off (GCT) Thyristors/Gate Drive Units
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| File Size |
69.53K /
5 Page |
View
it Online |
Download Datasheet |
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Vishay Intertechnology, Inc.
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| Part No. |
DBDD600S65K1
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| OCR Text |
...reverse recovery current v r = 3600v, t vj = 25c i rm - 800 - a v r = 3600v, t vj = 125c - 1000 - a sperrverz?gerungsladung i f = 600a, - di f /dt = 2000a/s recovered charge v r = 3600v, t vj = 25c q r - 550 - c v r = 3600v, t v... |
| Description |
IGBT Module IGBT模块
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| File Size |
106.44K /
5 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric Semicon...
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| Part No. |
CM400E2G-130H
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| OCR Text |
...ing energies [j/p] erec v cc = 3600v, v ge = 15v r g(on) = 15 ? , r g(off) = 50 ? l s = 170nh, tj = 125c inductive load eoff eon gate charge characteristics (typical) -15 -10 -5 0 5 10 15 20 024681 gate charge [c] gate-emitter volt... |
| Description |
HIGH POWER SWITCHING USE INSULATED TYPE
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| File Size |
241.58K /
8 Page |
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it Online |
Download Datasheet |
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Price and Availability
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