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  562-ohm Datasheet PDF File

For 562-ohm Found Datasheets File :: 5451    Search Time::2.672ms    
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    ATF-34143 ATF-34143-BLK ATF-34143-TR1 ATF-34143-TR2 DEMO-ATF3X14-33

ETC
HP[Agilent(Hewlett-Packard)]
Part No. ATF-34143 ATF-34143-BLK ATF-34143-TR1 ATF-34143-TR2 DEMO-ATF3X14-33
OCR Text ...hing Circuit _mag = 0.30 _ang = 56 (0.4 dB loss) DUT 50 Ohm Transmission Line Including Drain Bias T (0.5 dB loss) Output Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and O...
Description 评估板,亚欧信托基金X14300兆赫930-1990兆赫频率
Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package

File Size 111.58K  /  15 Page

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    MRF18060A MRF18060ALSR3 MRF18060AR3 MRF18060ASR3

MOTOROLA[Motorola, Inc]
Part No. MRF18060A MRF18060ALSR3 MRF18060AR3 MRF18060ASR3
OCR Text ...Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel. * Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40 Nominal. 1....2 (Minimum) M3 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to ...
Description MRF18060A, MRF18060AR3, MRF18060ALSR3, MRF18060ASR3 1.80-1.88 GHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs
RF POWER FIELD EFFECT TRANSISTORS

File Size 399.98K  /  8 Page

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    MRF18060B MRF18060BLSR3 MRF18060BR3 MRF18060BSR3

Motorola, Inc.
MOTOROLA[Motorola, Inc]
Part No. MRF18060B MRF18060BLSR3 MRF18060BR3 MRF18060BSR3
OCR Text ...Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel. N - Channel Enhancement - Mode Lateral MOSFETs MRF18060BR3 MRF18060BSR3 MRF18060B...2 (Minimum) M3 (Minimum) NOTE - CAUTION - MOS devices are susceptible to damage from electrostati...
Description HALL EFFFECT LATCH, SMD, SOT23W-3; Temp, op. min:-40(degree C); Temp, op. max:150(degree C); Pins, No. of:3; Case style:SOT-23W; Base number:3282; Bop, max:150G; Termination Type:SMD; Temperature, operating range:-40(degree C) to RoHS Compliant: Yes
RF Power Field Effect Transistors

File Size 486.59K  /  8 Page

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    MRF18085B MRF18085BLSR3 MRF18085BR3

Motorola, Inc.
MOTOROLA[Motorola, Inc]
Part No. MRF18085B MRF18085BLSR3 MRF18085BR3
OCR Text ...Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. N - Channel Enhancement - Mode Lateral MOSFETs MRF18085BR3 MRF18085BLSR3 GSM/GSM...2 2.5 -- -- -- 3.9 0.18 6.0 4 4.5 0.21 -- Vdc Vdc Vdc S V(BR)DSS IDSS IGSS 65 -- -- -- -- -- -- 10 1...
Description RF Power Field Effect Transistors

File Size 607.07K  /  12 Page

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    MTD5P06E

MOTOROLA INC
Motorola, Inc.
MOTOROLA[Motorola, Inc]
Part No. MTD5P06E
OCR Text ...12 24 13 10 10.4 3.4 4.2 6.2 28 56 32 28 15 -- -- -- nC ns (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss Coss Crss -- -- -- 393 171 33 560 240 40 pF VGS(th) 2.0 -- RDS(on) VDS(on) -- -- gFS 1.5 1.8 -- 2.0 3.3 2.9 -- mhos -- 3.0 3.0 0.37 4.0...
Description TMOS POWER FET 5.0 AMPERES 60 VOLTS RDS(on) = 0.55 OHM

File Size 207.75K  /  10 Page

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    PA21A PA21 PA26 PA25 PA25A

List of Unclassifed Man...
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
Part No. PA21A PA21 PA26 PA25 PA25A
OCR Text ...DERATIONS T C = 25C .1 1 2 3 4 56 10 20 30 40 50 SUPPLY TO OUTPUT DIFFERENTIAL VOLTAGE V S -VO (V) CURRENT LIMIT Current limit is internal to the amplifier, the typical value is shown in the current limit specification. Although R J...
Description    POWER DUAL OPERATIONAL AMPLIFIERS
POWER DUAL OPERATIONAL AMPLIFIERS 功耗双运算放大

File Size 83.30K  /  5 Page

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    PGB002ST23WR PGB

Littelfuse, Inc.
LITTELFUSE[Littelfuse]
Part No. PGB002ST23WR PGB
OCR Text ...INCH 0.150 0.140 E MM 3.81 3.56 Note: Pin 3 (common) is typically connected to chassis ground. However, since PulseGuard suppressors are bi-directional, thex system voltage bus can also be used as the ESD "dump". 179 w w w. l i t ...
Description PGB Series SOT23 Surface Mount ESD Suppressor

File Size 208.94K  /  3 Page

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    PHD12N10E

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PHD12N10E
OCR Text ...MIN. - 55 MAX. 100 100 30 14 10 56 75 175 175 UNIT V V V A A A W C C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resis...2 UNIT K/W K/W September 1997 1 Rev 1.000 Philips Semiconductors Product Specificatio...
Description PowerMOS transistor

File Size 78.59K  /  7 Page

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    BUK553-48C

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BUK553-48C
OCR Text ...150 25 -55 51 50 49 48 58 56 54 52 BUK5Y3-48C Tmb / degC = 47 50 46 45 44 43 0 2 4 6 ID / A 8 Tmb / degC = 150 25 -55 10 12 48 46 44 1 2 5 RG / kOhm 10 20 Fig.7. Typical clamping voltage V(CL)DSR = f(ID...
Description PowerMOS transistor Voltage clamped logic level FET

File Size 65.33K  /  9 Page

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    BUK555-200 BUK555-200A BUK555-200B

PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
Part No. BUK555-200 BUK555-200A BUK555-200B
OCR Text ...mb = 25 C MIN. - 55 -200A 14 10 56 125 175 175 MAX. 200 200 15 20 -200B 13 9.2 52 UNIT V V V V A A A W C C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to...
Description PowerMOS transistor Logic level FET 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

File Size 70.01K  /  7 Page

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