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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
SGW6N60UFD SGW6N60UFDTM
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| OCR Text |
...E = VGE IC = 3A, VGE = 15V IC = 6a, VGE = 15V 3.5 --4.5 2.1 2.6 6.5 2.6 -V V V
Dynamic Characteristics
Cies Coes Cres Input Capacitance ...200v IF=4A TC = 25 TC = 100
10
Reverse Recovery Current, I rr [A]
Forward Current, IF [A]
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| Description |
Discrete, High Performance IGBT with Diode
Ultra-Fast IGBT
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| File Size |
568.36K /
8 Page |
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Infineon Technologies A...
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| Part No. |
AUIRFU4292
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| OCR Text |
... 8.1mh, r g = 50 ? , i as = 5.6a, v gs =10v. part not recommended for use above this value. ? pulse width ?? 1.0ms; duty cycle ? 2%...200v ? c oss output capacitance ??? 26 ??? v gs = 0v, v ds = 200v ? = 1.0mhz
? auirfr/u4... |
| Description |
AUTOMOTIVE GRADE
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| File Size |
705.65K /
12 Page |
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it Online |
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Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
SGU2N60UFD
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| OCR Text |
...ent [A]
2.0
1.2A 2 IC = 0.6a 1
1.5
1.0
0.5
0 0 30 60 90 120 150
0.0
Duty cycle : 50% TC = 100 Power Dissipation = 4W...200v IF = 2A T C = 25 T C = 100
1
0.1 0 1 2 3
Reverse Recovery Current, Irr [A]
1 100
F... |
| Description |
Ultra-Fast IGBT 2.4 A, 600 V, N-CHANNEL IGBT, TO-251
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| File Size |
535.40K /
8 Page |
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it Online |
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Sanyo Semiconductor Corporation
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| Part No. |
2SC5967
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| OCR Text |
...ge time t stg i c =10a, i b1 =1.6a, i b2 =--5.0a 3.0 m s fall time t f i c =10a, i b1 =1.6a, i b2 =--5.0a 0.2 m s switching time test circuit v r r b v cc =200v v be = --5v + + 50 w input output r l =20 w 100 m f 470 f pw=20 m s d.c. 1% i... |
| Description |
Ultrahigh-resolution CRT Display Horizontal Deflection Output Driver
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| File Size |
202.95K /
4 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
SGR2N60UFD SGR2N60UFDTM SGR2N60UFDTF
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| OCR Text |
...ent [A]
2.0
1.2A 2 IC = 0.6a 1
1.5
1.0
0.5
0 0 30 60 90 120 150
0.0
Duty cycle : 50% TC = 100 Power Dissipation = 4W...200v IF = 2A T C = 25 T C = 100
1
0.1 0 1 2 3
Reverse Recovery Current, Irr [A]
1 100
F... |
| Description |
Ultra-Fast IGBT
Discrete, High Performance IGBT with Diode
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| File Size |
537.33K /
8 Page |
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it Online |
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Fairchild Semiconductor, Corp.
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| Part No. |
SGU2N60UFDTU
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| OCR Text |
... t c = 125 2.4a 1.2a i c = 0.6a collector - emitter voltage, v ce [v] gate - emitter voltage, v ge [v] 048121620 0 4 8 12 16 20 commo...200v i f = 2a t c = 25 t c = 100 reverce recovery time, t rr [ns] di/dt [a/us] 100 5... |
| Description |
2.4 A, 600 V, N-CHANNEL IGBT, TO-251 IPAK-3
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| File Size |
566.00K /
10 Page |
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it Online |
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Intersil, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
RURD620S FN3640 RURD620
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| OCR Text |
6a, 200v Ultrafast Diodes
The RURD620, and RURD620S are ultrafast diodes with soft recovery characteristics (trr < 25ns). They have low forward voltage drop and are silicon nitride passivated ion-implanted epitaxial planar construction. Th... |
| Description |
6a/ 200v Ultrafast Diodes
Mechanism, high speeed, 3-inch ELM w/low profile cutter, one tab 6 A, 200 V, SILICON, RECTIFIER DIODE, TO-251
6a 200v Ultrafast Diodes
From old datasheet system
6a, 200v Ultrafast Diodes
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| File Size |
49.70K /
4 Page |
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it Online |
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Sanyo
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| Part No. |
2SC3038
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| OCR Text |
...tstg tf
clamped IC=3A, IB1=0.6a, IB2=-0.6a, RL=66.6, VCC=200v IC=3A, IB1=0.6a, IB2=-0.6a, RL=66.6, VCC=200v IC=3A, IB1=0.6a, IB2=-0.6a, RL=66.6, VCC=200v
Switching Time Test Circuit
No.949-2/4
2SC3038
No.949-3/4
2SC3038
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| Description |
NPN Triple Diffused Planar Silicon Transistor
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| File Size |
98.75K /
4 Page |
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it Online |
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Price and Availability
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