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DYNEX[Dynex Semiconductor] Dynex Semiconductor, Ltd.
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| Part No. |
GP401DDS18
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| OCR Text |
...STICS
Vge = 20/15/12/10V 800 700 600
Collector current, Ic - (A)
Collector current, Ic - (A)
Vge = 20/15/12/10V 800 Common emitter T...1200
Diode turn-off energy, Eoff(diode) - (mJ)
Tcase = 125C VGE = 15V VCE = 900V Rg = 2.2 td(o... |
| Description |
Low VCE(SAT) Dual Switch IGBT Module Preliminary Information Low VCE(SAT) Dual Switch IGBT Module Preliminary Information 400 A, 1800 V, N-CHANNEL IGBT
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| File Size |
159.60K /
11 Page |
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DYNEX[Dynex Semiconductor]
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| Part No. |
GP401LSS18
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| OCR Text |
... 125C
Vge = 20/15/12/10V 800 700 600
Collector current, Ic - (A)
Collector current, Ic - (A)
Common emitter Tcase = 25C
700 600 5...1200 td(off) 1000 Tcase = 125C VGE = 15V VCE = 900V Rg = 4.3 td(on) 600 tf
50
Diode turn-off ene... |
| Description |
Powerline N-Channel Single Switch Low Loss IGBT Module Preliminary Information
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| File Size |
91.04K /
11 Page |
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EUPEC[eupec GmbH]
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| Part No. |
FZ600R65KF1
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| OCR Text |
... 900 800
25C 125C
IC [A]
700 600 500 400 300 200 100 0 0,0 1,0 2,0 3,0 4,0 5,0 6,0 7,0 8,0 9,0 10,0
VCE [V]
Ausgangskennlinienfeld (typisch) Output characteristic (typical)
1300 1200 1100 1000 900 800
20V 15V 12V 10V
IC = ... |
| Description |
IGBT-Module
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| File Size |
175.82K /
10 Page |
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it Online |
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Dynex Semiconductor, Ltd. DYNEX[Dynex Semiconductor]
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| Part No. |
GP801DCM18
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| OCR Text |
...0 450 300 525 190 Max. 1400 400 700 550 350 550 400 Units ns ns mJ ns ns mJ C A mJ
4/10
Caution: This device is sensitive to electrost...1200 Common emitter Tcase = 25C
Vge = 20/15/12/10V 1600 1400 1200 Common emitter Tcase = 125C
... |
| Description |
B Series/ Female Solder 800 A, 1800 V, N-CHANNEL IGBT Hi-Reliability Chopper Switch Low VCESAT IGBT Module
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| File Size |
158.09K /
10 Page |
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it Online |
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DYNEX[Dynex Semiconductor]
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| Part No. |
GP801DCS18
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| OCR Text |
...0 450 300 525 190 Max. 1400 400 700 550 350 550 400 Units ns ns mJ ns ns mJ C A mJ
4/10
Caution: This device is sensitive to electrost...1200
Collector current, Ic - (A)
Collector current, Ic - (A)
Vge = 20/15/12/10V 1600 Common emi... |
| Description |
Chopper Switch Low VCESAT IGBT Module
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| File Size |
168.98K /
10 Page |
View
it Online |
Download Datasheet
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Dynex Semiconductor Ltd. DYNEX[Dynex Semiconductor]
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| Part No. |
GP801DDM18
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| OCR Text |
...0 450 300 525 190 Max. 1400 400 700 550 350 550 400 Units ns ns mJ ns ns mJ C A mJ
4/10
Caution: This device is sensitive to electrost...1200 Common emitter Tcase = 25C
Vge = 20/15/12/10V 1600 1400 1200 Common emitter Tcase = 125C
... |
| Description |
Hi-Reliability Dual Switch Low VCESAT IGBT Module
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| File Size |
141.87K /
10 Page |
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it Online |
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VISHAY INTERTECHNOLOGY INC
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| Part No. |
VSKU105/04S90P
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| OCR Text |
...ju n c t io n t = 1 3 0 c j 700 800 900 1000 1100 1200 1300 1400 1500 1600 110100 number of equal amplitude half cycle current pulses (n) peak half sine wave on-state current (a) init ia l t = 130c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j a... |
| Description |
165 A, 400 V, SCR, TO-240AA
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| File Size |
164.65K /
8 Page |
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it Online |
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Dynex Semiconductor, Ltd. DYNEX[Dynex Semiconductor]
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| Part No. |
GP801DDS18
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| OCR Text |
...0 450 300 525 190 Max. 1400 400 700 550 350 550 400 Units ns ns mJ ns ns mJ C A mJ
4/10
Caution: This device is sensitive to electrost...1200
Collector current, Ic - (A)
Collector current, Ic - (A)
Vge = 20/15/12/10V 1600 Common emi... |
| Description |
Dual Switch Low VCE(SAT) IGBT Module 800 A, 1800 V, N-CHANNEL IGBT
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| File Size |
142.40K /
10 Page |
View
it Online |
Download Datasheet
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Price and Availability
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