| |
|
 |
DYNEX[Dynex Semiconductor]
|
| Part No. |
GP800NSS33
|
| OCR Text |
...) IC (max) IC(PK)
3300V 3.6V 800a 1600A
APPLICATIONS
s s s s
High Power Inverters Motor Controllers Induction Heating Resonant Converters Aux C
External connection C1 C2
The Powerline range of high power modules includes dua... |
| Description |
Single Switch IGBT Module Preliminary Information
|
| File Size |
92.19K /
9 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
Digitron Semiconductors
|
| Part No. |
1N5830
|
| OCR Text |
... i fsm maximum surge current 800a 800a 800a 8.3ms, half sine, t j = 125c v fm maximum peak forward voltage .360v .370v .380v i fm = 10a: t j = 25c* v fm maximum peak forward voltage .440v .460v .480v i fm = 25a: t j ... |
| Description |
25 AMP SCHOTTKY RECTIFIERS
|
| File Size |
99.55K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
NIEC[Nihon Inter Electronics Corporation]
|
| Part No. |
PDMB400B12C
|
| OCR Text |
...A,VGE=0V IF=400A,VGE=-10V,di/dt=800a/s
Min.
-
Max.
2.4 0.3
Unit V s Unit C/W
THERMAL CHARACTERISTICS Characteristic
Thermal Impedance IGBT DIODE
Symbol
Rth(j-c)
Test Condition
Junction to Case
Min.
-
Typ.
-
... |
| Description |
IGBT MODULE Dual 400A 1200V
|
| File Size |
114.94K /
3 Page |
View
it Online |
Download Datasheet |
| |
|
|
NIEC[Nihon Inter Electronics Corporation]
|
| Part No. |
PDMB400B12
|
| OCR Text |
...A,VGE=0V IF=400A,VGE=-10V,di/dt=800a/s
Min.
-
Max.
2.4 0.30
Unit V s Unit C/W
THERMAL CHARACTERISTICS Characteristic
Thermal Impedance IGBT DIODE
Symbol
Rth(j-c)
Test Condition
Junction to Case
Min.
-
Typ.
-
... |
| Description |
IGBT MODULE Dual 400A 1200V
|
| File Size |
115.04K /
3 Page |
View
it Online |
Download Datasheet |
| |
|
|
NIEC[Nihon Inter Electronics Corporation]
|
| Part No. |
PHM8001
|
| OCR Text |
800a /150V
OUTLINE DRAWING
PHM8001
* Super Low Rds(ON) 1.4 milliohms( @800a ) * With Fast Recovery Source-Drain Diode
Circuit
TYPICAL APPLICATIONS
* Chopper Control For FORKLIFTs
MAXMUM RATINGS Ratings
Drain-Source Voltage... |
| Description |
MOSFET MODULE Single 900A/150A
|
| File Size |
128.58K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| Part No. |
GCU15CA-130
|
| OCR Text |
...trigger voltage Conditions IT = 800a, Tj = 125C VRM = 6500V, Tj = 125C VDM = 6500V, Tj = 125C, Gata driver energized VRG = 21V, Tj = 125C VD = 3000V, Tj = 125C Gate driver energized (Expo. wave) IT = 1500A, VD = 3000V, di/dt = 1000A/s, Tj =... |
| Description |
MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT
|
| File Size |
71.89K /
7 Page |
View
it Online |
Download Datasheet |
| |
|
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| Part No. |
GCU08BA-130
|
| OCR Text |
...lable on-state current ........ 800a q IT(AV): Average on-state current ..................... 330A q VDRM: Repetitive peak off-state voltage ....... 6500V q VRRM: Repetitive peak reverse voltage ........ 6500V q Tj: Operation junction tempe... |
| Description |
MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT
|
| File Size |
60.32K /
6 Page |
View
it Online |
Download Datasheet |
| |
|
|
|
| Part No. |
FF800R12KL4C
|
| OCR Text |
...itter s?ttigungsspannung i c = 800a, v ge = 15v, t vj = 25c v ce sat - 2,1 2,6 v collector-emitter saturation voltage i c = 800a, v ge = 15v, t vj = 125c - 2,4 2,9 v gate-schwellenspannung gate threshold voltage i c = 32ma, v ce =... |
| Description |
IGBT Module
|
| File Size |
87.43K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
|
| Part No. |
FF800R12KL4C
|
| OCR Text |
...itter s?ttigungsspannung i c = 800a, v ge = 15v, t vj = 25c v ce sat - 2,1 2,6 v collector-emitter saturation voltage i c = 800a, v ge = 15v, t vj = 125c - 2,4 2,9 v gate-schwellenspannung gate threshold voltage i c = 32ma, v ce =... |
| Description |
1250 A, 1200 V, N-CHANNEL IGBT
|
| File Size |
135.78K /
9 Page |
View
it Online |
Download Datasheet |
| |
|
|
INFINEON TECHNOLOGIES AG
|
| Part No. |
FF800R12KF4
|
| OCR Text |
...emitter saturation voltage i c =800a, v ge =15v, t vj =25c v ce sat - 2,7 3,2 v i c =800a, v ge =15v, t vj =125c - 3,4 4 v gate-schwellenspannung gate threshold voltage i c =32ma, v ce =v ge , t vj =25c v ge(th) 4,5 5,5 6,5 v eingangskapa... |
| Description |
800 A, 1200 V, N-CHANNEL IGBT
|
| File Size |
112.80K /
4 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
