Part Number Hot Search : 
P1300 KSR231G 950L8L SSM6K APL35 66912 23990 KP12R
Product Description
Full Text Search
  8mb12k x 18bit synchronous bur Datasheet PDF File

For 8mb12k x 18bit synchronous bur Found Datasheets File :: 150+       Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4R761869A-FBCCN1 K4R761869A-GCN1 K4R761869A-GCT9 K4R761869A-FCT9 K4R761869A-GCM8 K4R761869A-FCM8
Description 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM

File Size 314.62K  /  20 Page

View it Online

Download Datasheet





    GS816018

GSI Technology
Part No. GS816018
Description 16MbM x 18bit)Sync burst SRAM(16M位(1M x 18位)同步静态RAM(位脉冲地址计数)

File Size 522.43K  /  26 Page

View it Online

Download Datasheet

    GS815218

GSI Technology
Part No. GS815218
Description 16MbM x 18bit)S/DCD burst SRAM(16M位(1M x 18位)可选单/双循环取消同步静态RAM(带2位脉冲地址计数器))

File Size 834.38K  /  38 Page

View it Online

Download Datasheet

    THC63LVDF64B THC63LVDF84B

THine Electronics, Inc.
Part No. THC63LVDF64B THC63LVDF84B
Description LVDS 24Bit/18bit COLOR HOST-LCD PANEL INTERFACE RECEIVER LVDS24Bit/18bit彩色主机- LCD面板接口接收

File Size 154.61K  /  10 Page

View it Online

Download Datasheet

    GSI Technology, Inc.
Part No. GS8180S18
Description 1Mb x 18bit Separate I/O Sigma DDR SRAM(1M x 18位独立I/O接口双数据速率读和写模式静态ΣRAM) 1x 18位独立的I / O西格玛的DDR SRAM的(100万18位独立的I / O接口双数据速率读和写模式静态ΣRAM

File Size 859.07K  /  32 Page

View it Online

Download Datasheet

    GS840E18 GS840E36B-166I GS840E18B-166I GS840E32T-166 GS840E32B-100 GS840E32B-166 GS840E32B-150 GS840E32B-180 GS840E32B-1

http://
GSI Technology, Inc.
Part No. GS840E18 GS840E36B-166I GS840E18B-166I GS840E32T-166 GS840E32B-100 GS840E32B-166 GS840E32B-150 GS840E32B-180 GS840E32B-180I GS840E36B-100 GS840E36T-150 GS840E36T-100 GS840E36T-100I GS840E36T-166 GS840E36B-166 GS840E36B-150 GS840E18B-166 GS840E18B-100 GS840E18B-100I GS840E18B-150 GS840E18B-150I GS840E18T-100 GS840E18T-100I GS840E18T-150 GS840E18T-166 GS840E32T-150 GS840E32T-100 GS840E18T-150I GS840E32T-166I GS840E36B-100I
Description 256K x 18, 128K x 32, 128K x 36 4Mb Sync burst SRAMs 256K x 18 CACHE SRAM, 8.5 ns, PBGA119
256K x 18, 128K x 32, 128K x 36 4Mb Sync burst SRAMs 128K x 36 CACHE SRAM, 8.5 ns, PBGA119
4Mb56K x 18bit) synchronous burst SRAM(4M位(256K x 18位)同步静态RAM(带2位脉冲地址计数器))

File Size 634.54K  /  31 Page

View it Online

Download Datasheet

    GS816033T-166I GS816019T-133 GS816019T-150 GS816019T-150I GS816019T-166 GS816019T-200 GS816019T-225I GS816019T-250

GSI Technology
Part No. GS816033T-166I GS816019T-133 GS816019T-150 GS816019T-150I GS816019T-166 GS816019T-200 GS816019T-225I GS816019T-250
Description 166MHz 512K x 32 synchronous SRAM
133MHz 1M x 18 synchronous SRAM
150MHz 1M x 18 synchronous SRAM
166MHz 1M x 18 synchronous SRAM
200MHz 1M x 18 synchronous SRAM
225MHz 1M x 18 synchronous SRAM
250MHz 1M x 18 synchronous SRAM

File Size 893.83K  /  29 Page

View it Online

Download Datasheet

    Toshiba, Corp.
Part No. THMR1E4-6 THMR1E4-8
Description 33,554,432-Word4MBytes) by 18-Bit(32M-Word × 18bit)Direct Rambus DRAM Module(I/O Frequency:600MHz64M字节(32M字18直接Rambus 动态RAM模块(I/O 频率:600MHz 33554432词(64MBytes)由18位(32M的词× 18位)直接Rambus的内存(输入/输出频率00MHz的)400字节2兆字× 18位)直接Rambus公司动态内存模块(输入/输出频率00MHz的)
33,554,432-Word4MBytes) by 18-Bit(32M-Word × 18bit)Direct Rambus DRAM Module(I/O Frequency:800MHz64M字节(32M字18直接Rambus 动态RAM模块(I/O 频率:800MHz 33554432词(64MBytes)由18位(32M的词× 18位)直接Rambus的内存(输入/输出频率00MHz的)400字节2兆字× 18位)直接Rambus公司动态内存模块(输入/输出频率00MHz的)

File Size 1,149.69K  /  13 Page

View it Online

Download Datasheet

    HY57V64820HGLTP-5 HY57V64820HGLTP-55 HY57V64820HGLTP-6 HY57V64820HGLTP-8 HY57V64820HGLTP-H HY57V64820HGLTP-K HY57V64820H

Hynix Semiconductor, Inc.
http://
Hynix Semiconductor Inc.
HYNIx[Hynix Semiconductor]
Part No. HY57V64820HGLTP-5 HY57V64820HGLTP-55 HY57V64820HGLTP-6 HY57V64820HGLTP-8 HY57V64820HGLTP-H HY57V64820HGLTP-K HY57V64820HGLTP-P HY57V64820HGLTP-S HY57V64820HGTP-5 HY57V64820HGTP HY57V64820HGTP-55 HY57V64820HGTP-6 HY57V64820HGTP-7 HY57V64820HGTP-8 HY57V64820HGTP-H HY57V64820HGTP-K HY57V64820HGTP-P HY57V64820HGTP-S HY57V64820HGLTP-7
Description 4 Banks x 2M x 8Bit synchronous DRAM 8M x 8 synchronous DRAM, 5.4 ns, PDSO54
4 Banks x 2M x 8Bit synchronous DRAM 8M x 8 synchronous DRAM, PDSO54
CAP 0.01UF 50V 10% x7R SMD-0805 TR-13 PLATED-NI/SN 8M x 8 synchronous DRAM, 5.4 ns, PDSO54
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 220uF; Voltage: 25V; Case Size: 8x11.5 mm; Packaging: Bulk

File Size 74.79K  /  11 Page

View it Online

Download Datasheet

    THC63LVDM8 THC63LVDM83R THC63LVDM63R

N.A.
THine Electronics, Inc.
Part No. THC63LVDM8 THC63LVDM83R THC63LVDM63R
Description REDUCED SWING LVDS 24Bit/18bit COLOR HOST-LCD PANEL INTERFACE 低摆幅的LVDS 24Bit/18bit主机彩色液晶显示器面板界
85MHz 24bit Color LVDS Chip Set

File Size 190.17K  /  12 Page

View it Online

Download Datasheet

For 8mb12k x 18bit synchronous bur Found Datasheets File :: 150+       Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

▲Up To Search▲

 




Price and Availability




 
Price & Availability of 8mb12k x 18bit synchronous bur

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.21617293357849