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  bits 8mx16 Datasheet PDF File

For bits 8mx16 Found Datasheets File :: 126    Search Time::5.937ms    
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    SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. M366S3323CT0-C1L M366S3323CT0 M366S3323CT0-C1H
OCR Text ...s (2K-bit) SDRAM 12 9 2 Rows 64 bits LVTTL 10ns 6ns A0h 60h -1L -1H Hex value -1L 80h 08h 04h 0Ch 09h 02h 40h 00h 01h A0h 60h 00h 80h 10h 00h 01h 8Fh 04h 06h 01h 01h 00h Note 1 1 2 2 15.625us, support self refresh x16 None tC...
Description PC100 Unbuffered DIMM
32MB x 64 SDRAM DIMM based on 16MB x 8, 4Banks, 4KB Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect

File Size 54.11K  /  7 Page

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    CMS4A16LAX-75EX

FIDELIX
Part No. CMS4A16LAX-75EX
OCR Text ...D or WRITE command. The address bits registered coincident with the ACTIVE command are used to select the bank and row to be accessed (BA0 and BA1 select the bank, A0- A11 select the row). The address bits (A0-A8) registered coincident with...
Description 128M(8mx16) Low Power SDRAM

File Size 613.75K  /  46 Page

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    CMS4A16LAX-75XX

FIDELIX
Part No. CMS4A16LAX-75XX
OCR Text ...D or WRITE command. The address bits registered coincident with the ACTIVE command are used to select the bank and row to be accessed (BA0 and BA1 select the bank, A0- A11 select the row). The address bits (A0-A8) registered coincident with...
Description 128M(8mx16) Low Power SDRAM

File Size 613.28K  /  46 Page

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    CMS4A16LAF CMS4A16LAG CMS4A16LAH

FIDELIX
Part No. CMS4A16LAF CMS4A16LAG CMS4A16LAH
OCR Text ...D or WRITE command. The address bits registered coincident with the ACTIVE command are used to select the bank and row to be accessed (BA0 and BA1 select the bank, A0- A11 select the row). The address bits (A0-A8) registered coincident with...
Description 128M(8mx16) Low Power SDRAM

File Size 622.84K  /  46 Page

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    H5MS5162DFR-K3M H5MS5162DFR-E3M H5MS5162DFR-J3M H5MS5162DFR-L3M

Hynix Semiconductor
Part No. H5MS5162DFR-K3M H5MS5162DFR-E3M H5MS5162DFR-J3M H5MS5162DFR-L3M
OCR Text ...D or WRITE command. The address bits registered coincident with the ACTIVE command are used to select the bank and the row to be accessed. T...8mx16 Bank3 DS 8mx16 Bank2 Row decoders 8mx16 Bank1 Row decoders 8mx16 Bank0 Row decoders DQ0 ...
Description 512Mb (32Mx16bit) Mobile DDR SDRAM

File Size 1,323.43K  /  62 Page

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    H5PS5162FFR-16C H5PS5162FFR-20C H5PS5162FFR-20L H5PS5162FFR-25C

Hynix Semiconductor
Part No. H5PS5162FFR-16C H5PS5162FFR-20C H5PS5162FFR-20L H5PS5162FFR-25C
OCR Text ...d or Write command. The address bits registered coincident with the active command are used to select the bank and row to be accessed (BA0-BA1 select the bank; A0-A12 select the row). The address bits registered coincident with the Read or ...
Description 512Mb(32Mx16) DDR2 SDRAM

File Size 1,098.83K  /  81 Page

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    KM48L16031BT-GLZ_Y_0 KM44L32031BT-GLZ_Y_0 KM416L8031BT-GLZ_Y_0 KM44L32031BT-GLZ/Y/0 KM48L16031BT-GLZ/Y/0 DDRSDRAM1111 KM

SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
http://
Part No. KM48L16031BT-GLZ_Y_0 KM44L32031BT-GLZ_Y_0 KM416L8031BT-GLZ_Y_0 KM44L32031BT-GLZ/Y/0 KM48L16031BT-GLZ/Y/0 DDRSDRAM1111 KM416L8031BT-GLZ/Y/0 K4H640438A-TLB0 K4H1G0838B-TLA0 K4H1G1638B-TLA0 K4H1G3238B-TLA0 K4H280438B-TLA0 K4H280838B-TLA0 K4H281638B-TLA0 K4H283238B-TLA0 K4H510838B-TLA0 K4H511638B-TLA0 K4H1G1638C-TLA0 K4H1G0838C-TLA0 K4H1G3238C-TLA0 K4H280838C-TLA0 K4H283238B-TLA2 K4H641638A-TLA2 K4H511638A-TLB0 K4H511638A-TCA2 K4H281638A-TLA2 K4H563238B-TCA0 K4H513238B-TLA2 K4H643238B-TLA0 KM44L32031BT-GLZ K4H561638E-TCA0 K4H560838E-TLA2 K4H560438M-TCA0 K4H511638E-TCA2 K4H280838A-TCA0 K4H280838M-TCA0 K4H283238M-TCA2 K4H281638M-TLA0 K4H640838A-TCA0 K4H280838A-TCB0 K4H563238E-TLA0 K4H511638E-TLA0 K4H641638C-TLB0 K4H641638C-TCA2 K4H511638D-TLA2 K4H280838B-TCA2 K4H280838C-TCB0 K4H280438A-TLB0 K4H643238B-TLB0 K4H560838A-TLA2 K4H640838A-TCA2 K4H640838A-TLA2 K4H510838D-TLA2 K4H510438B-TCA0 K4H510438B-TCB0 K4H560438D-TCB0 K4H1G3238C-TCA2 K4H510438C-TCA2 K4H560838C-TCA2 K4H510438E-TCB0 K4H561638E-TCB0 K4H510838E-TCB0 K4H283238E-TCB0 K4H511638E-TCB0 K4H281638E-TCB0 K4H560438B-TCB0 K4H560438B-TLA0 K4H1G0838C-TCB0 K4H510838C-TCB0 838M-TLA2 838M-TLA0 K4H560838E-TCA0 K4H1G0838E-TCA0 K4H1G0838E-TCA2
OCR Text ...n for precharge by bank address bits Table 6 : Operating description when new command asserted while read with auto precharge is issued Tabl...8mx16 K4H281638B-TCA2 K4H281638B-TLA2 133Mhz w/ CL=2.5 K4H280438B-TCB0 K4H280438B-TLB0 K4H280838B-TC...
Description Dual Wide Bandwidth High Output Drive Single Supply Op Amp With Shutdown 14-PDIP 0 to 70
Enhanced Product 10-Bit Analog-To-Digital Converters W/Serial Control &amp; 11 Analog Inputs 20-SOIC -40 to 125
Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-SOIC 0 to 70
Quad, Micropower, LinCMOS(TM) Comparator 14-CDIP -55 to 125
Single Wide Bandwidth High Output Drive Single Supply Op Amp 8-PDIP 0 to 70
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-SOIC 0 to 70
Enclosures; For Use With:PC30/25-1 USA Cardmaster Polycarbonate Enclosure; Approval Bodies:UL, CSA; External Height:11.4"; External Width:7.5"; Features:Impact Resistant EN 50102; UV Resistant to UL 508 RoHS Compliant: Yes
Enclosure; For Use With:PC17/16-L3, -3, -LFC3, FC3 Cardmaster Polycarbonate Enclosure; Approval Bodies:UL, CSA; External Height:5.4"; External Width:5.2"; Features:Impact Resistant EN 50102; UV Resistant to UL 508
Dual Wide Bandwidth High Output Drive Single Supply Op Amp With Shutdown 14-SOIC 0 to 70 128MB DDR SDRAM
8-Bit, 20 kSPS ADC Serial Out, uProcessor Periph./Standalone, Rem. Op w/Ser. Data Link, Mux option 20-SOIC 128MB DDR SDRAM
Low Noise Precision Rail-To-Rail Output Operational Amplifier 8-PDIP 0 to 70 128MB DDR SDRAM
DIODE ZENER SINGLE 500mW 5.6Vz 0.05mA-Izt 0.05 2uA-Ir 4 SOD-123 3K/REEL 128MB DDR SDRAM
8-Bit, 392 kSPS ADC Parallel Out, Microprocessor Peripheral, On-Chip Track-and-Hold, Single Channels 20-SOIC 128MB DDR SDRAM
DIODE ZENER DUAL COMMON-CATHODE 300mW 5.6Vz 5mA-Izt 0.0714 0.1uA-Ir 1 SOT-23 3K/REEL 128MB DDR SDRAM
DIODE ZENER SINGLE 200mW 5.6Vz 0.05mA-Izt 0.05 2uA-Ir 4 SOD-323 3K/REEL 128MB DDR SDRAM
8-Bit, 20 kSPS ADC Serial Out, uProcessor Periph./Standalone, Rem. Op w/Ser. Data Link, Mux option 20-PDIP 128MB DDR SDRAM
DIODE ZENER DUAL COMMON-CATHODE 300mW 51Vz 5mA-Izt 0.0588 0.1uA-Ir 38 SOT-23 3K/REEL 128MB DDR SDRAM
10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, 11 Ch. 20-SOIC 128MB DDR SDRAM
10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, 11 Ch. 20-PLCC -40 to 125 128MB DDR SDRAM
DDR SDRAM Specification Version 1.0 DDR SDRAM的规范版.0
Dual Wide Bandwidth High Output Drive Single Supply Op Amp With Shutdown 14-PDIP -40 to 125 128MB DDR SDRAM
128Mb DDR SDRAM 128MB DDR SDRAM
8-Bit, 31 kSPS ADC Serial Out, Microprocessor Peripheral/Standalone, Single Channels 8-PDIP 128MB DDR SDRAM
8-Bit, 31 kSPS ADC Serial Out, Microprocessor Peripheral/Standalone, Single Channels 8-SOIC 128MB DDR SDRAM
DDR SDRAM Specification Version 1.0
   128Mb DDR SDRAM

File Size 683.42K  /  53 Page

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    K4S281632K-UC_L50 K4S281632K-UC_L60 K4S280832K-UC_L75 K4S281632K-UC/L50 K4S281632K-UC/L60 K4S280832K-UC/L75 K4S281632K-U

Samsung semiconductor
Part No. K4S281632K-UC_L50 K4S281632K-UC_L60 K4S280832K-UC_L75 K4S281632K-UC/L50 K4S281632K-UC/L60 K4S280832K-UC/L75 K4S281632K-UC/L75
OCR Text ...32K / K4S281632K is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 8 bits / 4 x 2,097,152 words...8mx16 Row Address A0~A11 A0~A11 Column Address A0-A9 A0-A8 Row & Column address configurati...
Description 128Mb K-die SDRAM Specification

File Size 237.10K  /  15 Page

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    Samsung Electronics
Part No. K5L2731CAM-D770
OCR Text ...program operation in unit of 16 bits (Word) and erases in units of a block. Single or multiple blocks can be erased. The block erase operati...8mx16) B-die Page Mode, Multi Bank NOR Flash 7 Revision 0.0 September 2006 www.DataSheet.in...
Description 128Mb NOR Flash 32Mb UtRAM

File Size 942.76K  /  65 Page

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For bits 8mx16 Found Datasheets File :: 126    Search Time::5.937ms    
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