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  compound field effect power tr Datasheet PDF File

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    TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
Part No. SSM3J02F
Description 600 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
field effect transistor Silicon P Channel MOS Type power Management Switch High Speed Switching Applications
TOSHIBA field effect transistor Silicon P Channel MOS Type

File Size 152.94K  /  5 Page

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    INFINEON[Infineon Technologies AG]
Part No. PTF080601F PTF080601E PTF080601A PTF080601
Description LDMOS RF power field effect transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦,860-960兆赫
LDMOS RF power field effect transistor 60 W 860-960 MHz
LDMOS RF power field effect transistor 60 W/ 860-960 MHz

File Size 293.07K  /  6 Page

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    Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Part No. SSM3J13T
Description TOSHIBA field effect transistor Silicon P Channel MOS Type (U-MOSII)
field effect transistor Silicon P Channel MOS Type (U-MOSII) power Management Switch High Speed Switching Applications

File Size 170.34K  /  6 Page

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    ERICSSON power MODULES AB
Ericsson Microelectronics
Part No. PTF10020
Description 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF power, MOSFET
125 Watts/ 860-960 MHz GOLDMOS field effect transistor
125 Watts, 86060 MHz GOLDMOS field effect transistor

File Size 313.64K  /  6 Page

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    IRFF130 IRFF131 IRFF132 IRFF133

General Electric Solid State
GE Solid State
Part No. IRFF130 IRFF131 IRFF132 IRFF133
Description N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 7.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 8.0A.
N-CHANNEL ENHANCEMENT-MODE power field-effect trANSISTORS
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 7.0A.

File Size 161.86K  /  5 Page

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    PTF181301 PTF181301A

INFINEON[Infineon Technologies AG]
Part No. PTF181301 PTF181301A
Description LDMOS RF power field effect transistor 130 W, 1805-1880 MHz LDMOS射频功率场效应晶体管130瓦,1805年至1880年兆
LDMOS RF power field effect transistor 130 W/ 1805-1880 MHz

File Size 63.03K  /  4 Page

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    Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Part No. SSM3J14T
Description TOSHIBA field effect transistor Silicon P Channel MOS Type (U-MOSII)
field effect transistor Silicon P Channel MOS Type (U-MOSII) power Management Switch DC-DC Converters

File Size 174.66K  /  6 Page

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    Philips
Part No. ISP1123 ISP1123D
Description Universal Serial Bus compound hub
USB compound hub

File Size 255.31K  /  49 Page

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    General Electric Solid State
Part No. VN30ABA VN35ABA
Description field effect power transistor

File Size 225.26K  /  2 Page

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    FREESCALE[Freescale Semiconductor, Inc]
Part No. MRF5S19060MR1 MRF5S19060MBR1
Description RF power field effect transistors

File Size 486.13K  /  16 Page

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