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ON Semi
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| Part No. |
MMSF1308_D ON2250
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| OCR Text |
designer'sTM Data Sheet
Low Power Surface Mount Products
MMSF1308
Motorola Preferred Device
Single N-Channel MiniMOSTM Field Effect Transistor
MiniMOSTM devices are an advanced series of power MOSFETs which utilize Motorola's Hig... |
| Description |
Low Power Surface Mount Products
From old datasheet system
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| File Size |
173.78K /
10 Page |
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it Online |
Download Datasheet
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Motorola, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
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| Part No. |
MTW45N10E MTW45N10E_D ON2699 MTW45N10
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| OCR Text |
designer'sTM Data Sheet
TMOS E-FET.TM Power Field Effect Transistor TO-247 with Isolated Mounting Hole
N-Channel Enhancement-Mode Silicon Gate
This advanced TMOS E-FET is designed to withstand high energy in the avalanche and commutati... |
| Description |
From old datasheet system
TMOS POWER FET 45 AMPERES 100 VOLTS RDS(on) = 0.035 OHM
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| File Size |
155.69K /
8 Page |
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it Online |
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MOTOROLA[Motorola, Inc]
ON Semi
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| Part No. |
MUR5150E_D ON2741 MUR5150E
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| OCR Text |
designer'sTM Data Sheet
SCANSWITCHTM Power Rectifier
For Use As A Damper Diode In High and Very High Resolution Monitors
The MUR5150E is a state-of-the-art Ultrafast Power Rectifier specifically designed for use as a damper diode in ho... |
| Description |
From old datasheet system
SCANSWITCH RECTIFIER 5.0 AMPERES 1500 VOLTS
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| File Size |
73.42K /
4 Page |
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it Online |
Download Datasheet |
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ONSEMI[ON Semiconductor]
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| Part No. |
MGP20N60U_D ON1866 MGP20N60U ON1865
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| OCR Text |
designer'sTM Data Sheet
Insulated Gate Bipolar Transistor
N-Channel Enhancement-Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage-blocki... |
| Description |
IGBT IN TO-220 20 A @ 90 31 A @ 25 600 VOLTS
From old datasheet system
Insulated Gate Bipolar Transistor
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| File Size |
116.77K /
5 Page |
View
it Online |
Download Datasheet |
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ONSEMI[ON Semiconductor]
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| Part No. |
MGW20N120_D ON1922 MGW20N120
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| OCR Text |
designer'sTM Data Sheet
Insulated Gate Bipolar Transistor
N-Channel Enhancement-Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage-blocki... |
| Description |
Insulated Gate Bipolar Transistor
From old datasheet system
IGBT IN TO-47 20 A @ 90 28 A @ 25 1200 VOLTS
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| File Size |
135.63K /
5 Page |
View
it Online |
Download Datasheet |
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ON Semi
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| Part No. |
MGW20N60D_D ON1924
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| OCR Text |
designer'sTM Data Sheet
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
N-Channel Enhancement-Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co-packaged with a soft recovery ultra-fast rectifier and uses ... |
| Description |
IGBT IN TO-47 20 A @ 90 32 A @ 25 600 VOLTS
From old datasheet system
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| File Size |
170.46K /
6 Page |
View
it Online |
Download Datasheet |
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