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				NXP Semiconductors
Part No.	PSMN4R3-100ES PSMN4R3-100ES-15
OCR Text	... 175 c static characteristics r dson drain-source on-state resistance v gs =10v; i d =25a; t j = 100 c; see figure 12 ; see figure 13 -6.67.8m ? v gs =10v; i d =25a; t j =25c; see figure 13 [2] -3.74.3m ? dynamic characteristics q gd ...
Description	N-channel 100 V 4.3 mΩ standard level MOSFET in I2PAK
File Size	198.63K / 14 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V.
Part No.	PSMN4R1-30YLC
OCR Text	... 175 c static characteristics r dson drain-source on-state resistance v gs =4.5v; i d =20a; t j =25c; see figure 12 - 4.75 5.7 m ? v gs =10v; i d =20a; t j =25c; see figure 12 - 3.65 4.35 m ? psmn4r1-30ylc all information provided in...
Description	N-channel 30 V 4.35m logic level MOSFET in LFPAK using NextPower technology 90 A, 30 V, 0.0057 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235
File Size	305.41K / 15 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	PSMN3R5-30LL PSMN3R5-30LL11
OCR Text	... 150 c static characteristics r dson drain-source on-state resistance v gs =10v; i d =10a; t j = 100 c; see figure 12 --5m ? v gs =4.5v; i d =10a; t j =25c; see figure 13 -4.35.6m ? v gs =10v; i d =10a; t j =25c; see figure 13 -33.6m ...
Description	N-channel DFN3333-8 30 V 3.6 mΩ logic level MOSFET
File Size	350.06K / 15 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	PML340SN
OCR Text	... n v ds 220 v n i d 7.3 a n r dson 386 m w n q gd = 4.25 nc (typ) table 1. pinning pin description simpli?ed outline symbol 1, 2, 3 source (s) sot873-1 (hvson8) 4 gate (g) 5, 6, 7, 8 drain (d) 1234 8765 transparent top view s d g mbb076 ...
Description	N-channel TrenchMOS standard level FET
File Size	81.99K / 12 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	PMV16UN
OCR Text	...--5.8a static characteristics r dson drain-source on-state resistance v gs =4.5v; i d =5.8a; t j =25c - 1518m ? pmv16un all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. pr...
Description	20 V, 5.8 A N-channel Trench MOSFET
File Size	805.41K / 16 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BUK95R2-40B
OCR Text	...itching. n e ds(al)s 1.2 j n r dson = 2.7 m w (typ) n i d 100 a n p tot 300 w. table 1: pinning - sot78 and sot404, simpli?ed outline and symbol pin description simpli?ed outline symbol 1 gate (g) sot78 (to-220ab) sot404 (d 2 -pak) 2 dra...
Description	TrenchMOS logic level FET
File Size	129.26K / 15 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BUK7L3R3-34BRC
OCR Text	... v loads n e ds(al)s 1.9 j n r dson = 2.9 m w (typ) n i d 75 a n p tot 298 w table 1. pinning pin description simpli?ed outline symbol 1 gate (g) sot78c (to-220) 2 drain (d) 3 source (s) mb mounting base; connected to drain (d) 3 2 mb 1 ...
Description	N-channel TrenchPLUS standard level FET
File Size	97.50K / 14 Page	View it Online	Download Datasheet

				NXP Semiconductors Philips
Part No.	BUK754R3-40B BUK764R3-40B
OCR Text	...tching. n e ds(al)s 961 mj n r dson = 3.8 m w (typ) n i d 75 a n p tot 254 w. table 1: pinning - sot78 and sot404 simpli?ed outlines and symbol pin description simpli?ed outline symbol 1 gate (g) sot78 (to-220ab) sot404 (d 2 -pak) 2 drai...
Description	TrenchMOS standard level FET TrenchMOS (tm) standard level FET
File Size	103.72K / 15 Page	View it Online	Download Datasheet

				NXP Semiconductors NXP Semiconductors N.V.
Part No.	PMDT290UCE
OCR Text	...nnel), static characteristics r dson drain-source on-state resistance v gs =4.5v; i d = 500 ma; t j = 25 c - 290 380 m ? tr2 (p-channel), static characteristics r dson drain-source on-state resistance v gs =-4.5v; i d = -400 ma; t j = 25 ...
Description	20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET 20 - 20 V, 800 - 550 mA N-P-channel Trench MOSFET
File Size	215.28K / 20 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BUK6C2R1-55C
OCR Text	... 300 w static characteristics r dson drain-source on-state resistance v gs =10v; i d =90a; t j =25c; see figure 11 -1.92.3m ? buk6c2r1-55c all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all ...
Description	N-channel TrenchMOS intermediate level FET
File Size	163.24K / 13 Page	View it Online	Download Datasheet

For dson Found Datasheets File :: 1614 Search Time::1.297ms
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