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SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
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Part No. |
BSM100GT120DN2 100T12N2
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Description |
igbt Power Module (Three single switches Including fast free-wheeling diodes Package with insulated metal base plate) 150 A, 1200 V, N-CHANNEL igbt From old datasheet system
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File Size |
180.15K /
9 Page |
View
it Online |
Download Datasheet
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IRF[International Rectifier]
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Part No. |
IRG4PC60U-P
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Description |
insulated gaTE BIPOLAR TRANSISTOR Ultrafast speed igbt 600V Ultrafast 8-60 kHz Discrete igbt in a TO-247AC Solder Plate package
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File Size |
119.66K /
8 Page |
View
it Online |
Download Datasheet
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IRF[International Rectifier]
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Part No. |
IRG4BC40S
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Description |
insulated gaTE BIPOLAR TRANSISTOR Standard speed igbt(Vces=600V Vce(on)typ.=1.32V @Vge=15V Ic=31A) insulated gaTE BIPOLAR TRANSISTOR Standard speed igbt(Vces=600V, Vce(on)typ.=1.32V, @Vge=15V, Ic=31A) 600V DC-1 kHz (Standard) Discrete igbt in a TO-220AB package
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File Size |
154.81K /
8 Page |
View
it Online |
Download Datasheet
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Price and Availability
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