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  fast speed igbt - insulated ga Datasheet PDF File

For fast speed igbt - insulated ga Found Datasheets File :: 150+       Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BSM100GT120DN2 100T12N2
Description igbt Power Module (Three single switches Including fast free-wheeling diodes Package with insulated metal base plate) 150 A, 1200 V, N-CHANNEL igbt
From old datasheet system

File Size 180.15K  /  9 Page

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    IRF[International Rectifier]
Part No. IRG4PC60U-P
Description insulated gaTE BIPOLAR TRANSISTOR Ultrafast speed igbt
600V Ultrafast 8-60 kHz Discrete igbt in a TO-247AC Solder Plate package

File Size 119.66K  /  8 Page

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    APT15GT120BR APT15GT120BRG APT15GT120SRG

Microsemi, Corp.
Microsemi Corporation
Part No. APT15GT120BR APT15GT120BRG APT15GT120SRG
Description insulated gate Bipolar Transistor - NPT Standard speed; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 3; IC (A): 15; 36 A, 1200 V, N-CHANNEL igbt
Thunderbolt igbt

File Size 119.48K  /  6 Page

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    APT50GT60BR APT50GT60SRG APT50GT60BRG

Microsemi Corporation
http://
Microsemi, Corp.
Part No. APT50GT60BR APT50GT60SRG APT50GT60BRG
Description Thunderbolt igbt
insulated gate Bipolar Transistor - NPT Standard speed; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 52; 110 A, 600 V, N-CHANNEL igbt, TO-247AD

File Size 139.24K  /  6 Page

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    APT46GA90JD40

Microsemi Corporation
Microsemi, Corp.
Part No. APT46ga90JD40
Description High speed PT igbt
insulated gate Bipolar Transistor - Power MOS 8; Package: ISOTOP&#174;; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL igbt

File Size 235.94K  /  9 Page

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    APT100GT120JR

Microsemi, Corp.
Microsemi Corporation
Part No. APT100GT120JR
Description insulated gate Bipolar Transistor - NPT Standard speed; Package: ISOTOP&#174;; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 60; 123 A, 1200 V, N-CHANNEL igbt
Thunderbolt igbt

File Size 187.32K  /  6 Page

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    APT150GT120JR

Microsemi Corporation
Microsemi, Corp.
Part No. APT150GT120JR
Description Thunderbolt igbt
insulated gate Bipolar Transistor - NPT Standard speed; Package: ISOTOP&#174;; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 90; 170 A, 1200 V, N-CHANNEL igbt

File Size 669.00K  /  6 Page

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    IRF[International Rectifier]
Part No. IRG4BC40S
Description insulated gaTE BIPOLAR TRANSISTOR Standard speed igbt(Vces=600V Vce(on)typ.=1.32V @Vge=15V Ic=31A)
insulated gaTE BIPOLAR TRANSISTOR Standard speed igbt(Vces=600V, Vce(on)typ.=1.32V, @Vge=15V, Ic=31A)
600V DC-1 kHz (Standard) Discrete igbt in a TO-220AB package

File Size 154.81K  /  8 Page

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    GA200TS60U

IRF[International Rectifier]
Part No. ga200TS60U
Description HALF-BRIDGE igbt INT-A-PAK Ultra-fast speed igbt

File Size 299.60K  /  10 Page

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    GA2.0TS60U

International Rectifier
Part No. ga2.0TS60U
Description HALF-BRIDGE igbt INT-A-PAK Ultra-fast speed igbt

File Size 303.24K  /  10 Page

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For fast speed igbt - insulated ga Found Datasheets File :: 150+       Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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