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  ge-avalanche Datasheet PDF File

For ge-avalanche Found Datasheets File :: 2078    Search Time::3.5ms    
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    NGB8202AN NGB8202NT4G NGB8202N11 NGB8202ANT4G

ON Semiconductor
Part No. NGB8202AN NGB8202NT4G NGB8202N11 NGB8202ANT4G
OCR Text ... 440 v gate ? emitter voltage v ge 15 v collector current ? continuous @ t c = 25 c ? pulsed i c 20 50 a dc a ac continuous gate curre...avalanche characteristics ( ? 55 t j 175 c) characteristic symbol value unit single pulse...
Description Ignition IGBT 20 A, 400 V, N.Channel D2PAK

File Size 118.37K  /  8 Page

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    NGB8204ANT4G NGB8204N11

ON Semiconductor
Part No. NGB8204ANT4G NGB8204N11
OCR Text ...ated gate ? emitter resistor (r ge ) ? emitter ballasting for short ? circuit capability ? these are pb ? free devices maximum ratings (t j...avalanche characteristics ( ? 55 t j 175 c) characteristic symbol value unit single pulse...
Description Ignition IGBT 18 Amps, 400 Volts

File Size 121.67K  /  8 Page

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    NGB8206ANT4G NGB8206NT4G NGB8206ANSL3G NGB8206N11 NGB8206NG NGB8206ANTF4G

ON Semiconductor
Part No. NGB8206ANT4G NGB8206NT4G NGB8206ANSL3G NGB8206N11 NGB8206NG NGB8206ANTF4G
OCR Text ... 390 v gate ? emitter voltage v ge 15 v collector current ? continuous @ t c = 25 c ? pulsed i c 20 50 a dc a ac continuous gate curre...avalanche characteristics ( ? 55 t j 175 c) characteristic symbol value unit single pulse...
Description Ignition IGBT 20 A, 350 V, N.Channel D2PAK

File Size 118.36K  /  8 Page

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    NGB8207ABNT4G NGB8207ANT4G NGB8207AN11

ON Semiconductor
Part No. NGB8207ABNT4G NGB8207ANT4G NGB8207AN11
OCR Text ... 365 v gate ? emitter voltage v ge 15 v collector current ? continuous @ t c = 25 c ? pulsed i c 20 50 a dc a ac continuous gate curre...avalanche characteristics ( ? 40 t j 150 c) characteristic symbol value unit single pulse...
Description Ignition IGBT 20 A, 365 V, N.Channel D2PAK

File Size 119.57K  /  7 Page

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    NGB8245N NGB8245NT4G

ON Semiconductor
Part No. NGB8245N NGB8245NT4G
OCR Text ... 500 v gate ? emitter voltage v ge 15 v collector current ? continuous @ t c = 25 c ? pulsed i c 20 50 a dc a ac continuous gate curre...avalanche characteristics characteristic symbol value unit single pulse collector ? to ? emitter ava...
Description Ignition IGBT 20 A, 450 V, N.Channel D2PAK

File Size 116.47K  /  7 Page

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    NGD18N40CLBT4G NGD18N40ACLBT4G NGD18N40CLB12

ON Semiconductor
Part No. NGD18N40CLBT4G NGD18N40ACLBT4G NGD18N40CLB12
OCR Text ... and gate ? emitter resistor (r ge ) ? emitter ballasting for short ? circuit capability ? these are pb ? free devices maximum ratings (t j...avalanche characteristics ( ? 55 t j 175 c) characteristic symbol value unit single pulse...
Description Ignition IGBT, 18 A, 400 V N.Channel DPAK

File Size 121.31K  /  8 Page

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    ILB03N60

INFINEON TECHNOLOGIES AG
Part No. ILB03N60
OCR Text ....32 mj gate-emitter voltage v ge 30 v reverse diode d v /d t i c 3a, v ce 450v, t jmax 150c d v /d t 1 2 v/ns power...avalanche breakdown voltage v (br)ce v gs = 0v; i c = 0. 4a - 850 - v ge =10v, i c =3.0a t j...
Description 4.5 A, 600 V, N-CHANNEL IGBT, TO-263AB

File Size 267.21K  /  13 Page

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    ILA03N60 ILD03N60

INFINEON TECHNOLOGIES AG
Part No. ILA03N60 ILD03N60
OCR Text ....32 mj gate-emitter voltage v ge 30 v reverse diode d v /d t i c 3a, v ce 450v, t jmax 150c d v /d t 1 2 v/ns power...avalanche breakdown voltage v (br)ce v gs = 0v; i c = 0. 4a - 850 - v ge =10v, i c =3.0a t j...
Description 3 A, 600 V, N-CHANNEL IGBT, TO-220AB
4.5 A, 600 V, N-CHANNEL IGBT, TO-252AA

File Size 327.18K  /  14 Page

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    SUM90N10-8M2P-E3

VISHAY SILICONIX
Part No. SUM90N10-8M2P-E3
OCR Text ... - dr a in-to- s o u rce volt a ge (v) v g s = 10 thr u 7 v - dr a in c u rrent (a) i d 6 v 5 v 0 20 40 60 8 0 100 0246 8 10 v g s - g a ...avalanche current capability vs. time t av ( s ec) (a) i dav 100 10 1 t j = 25 c t j = 150 c 10 - 3...
Description 90 A, 100 V, 0.0082 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263

File Size 79.20K  /  6 Page

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    AND9068

ON Semiconductor
Part No. AND9068
OCR Text ...m 60 a gate ? emitter voltage v ge 20 v power dissipation @ t c = 25 c @ t c = 100 c p d 130 55 w short circuit withstand time v ge ...avalanche breakdown and dissipating excessive energy in the device. the avalanche breakdown voltage ...
Description IGBT

File Size 247.93K  /  9 Page

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For ge-avalanche Found Datasheets File :: 2078    Search Time::3.5ms    
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