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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
GT60J322
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| Description |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Soft Switching Applications
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| File Size |
275.72K /
6 Page |
View
it Online |
Download Datasheet
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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
GT60PR21
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| Description |
IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N)
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| Tech specs |
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Official Product Page
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TOSHIBA[Toshiba Semiconductor]
|
| Part No. |
GT60J321
|
| Description |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Soft Switching Applications
|
| File Size |
171.83K /
6 Page |
View
it Online |
Download Datasheet
|
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