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  high breakdown voltage vceo 12 Datasheet PDF File

For high breakdown voltage vceo 12 Found Datasheets File :: 150+       Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    TY Semiconductor Co., Ltd
Part No. 2SA1413-Z
Description high voltage: vceo=-600V high speed:tr 1.0ìs Collector to Base voltage VCBO -600 V

File Size 90.49K  /  2 Page

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    TY Semiconductor Co., Ltd
Part No. 2SA1400-Z
Description high voltage: vceo=-400V high speed:tr 1.0ìs Collector to Base voltage VCBO -400 V

File Size 53.65K  /  1 Page

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    TY Semicondutor
TY Semiconductor Co., Ltd
Part No. 2SC2881
Description voltage Amplifier Applications
high voltage : vceo = 120V high Transition Frequency : fT = 120MHz(typ.)

File Size 386.47K  /  2 Page

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    TY Semiconductor Co., Ltd
Part No. 2SA1412-Z
Description high voltage: vceo=-400V high speed:tr 0.7ìs Collector to Base voltage VCBO -400 V

File Size 65.43K  /  2 Page

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    74VHC125 HC125 74VHC125SJX 74VHC125M 74VHC125MTC 74VHC125MTCX 74VHC125MTCX_NL 74VHC125MX 74VHC125MX_NL 74VHC125N 74VHC12

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
Part No. 74VHC125 HC125 74VHC125SJX 74VHC125M 74VHC125MTC 74VHC125MTCX 74VHC125MTCX_NL 74VHC125MX 74VHC125MX_NL 74VHC125N 74VHC125NX 74VHC125SJ
Description    Quad Buffer with 3-STATE Outputs
Small Signal Bipolar Transistor; Collector Emitter voltage, vceo:80V; Transistor Polarity:Dual P Channel; C-E breakdown voltage:80V; DC Current Gain Min (hfe):25; Package/Case:TO-92; Collector Base voltage:80V
Low Cost, high Speed Differential Amplifier; Package: SOIC; No of Pins: 8; Temperature Range: Industrial
Quad Buffer with 3-STATE Outputs AHC/VHC SERIES, QUAD 1-BIT DRIVER, TRUE OUTPUT, PDIP14

File Size 100.82K  /  8 Page

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    HCF4001BEY HCF4001BM1 HCF4001M013TR HCF4001B

意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. HCF4001BEY HCF4001BM1 HCF4001M013TR HCF4001B
Description RF Bipolar Transistor; Collector Emitter voltage, vceo:3V; Transistor Polarity:Dual P Channel; Power Dissipation:150W; C-E breakdown voltage:200V; DC Current Gain Min (hfe):35; Collector Current:15A; DC Current Gain Max (hfe):160
QUAD 2-INPUT NOR GATE

File Size 108.88K  /  8 Page

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    BFN21 Q62702-F1059

SIEMENS[Siemens Semiconductor Group]
Part No. BFN21 Q62702-F1059
Description From old datasheet system
PNP Silicon high-voltage Transistor (Suitable for video output stages in TV sets and switching power supplies high breakdown voltage)

File Size 128.55K  /  4 Page

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    BFN37 BFN39 Q62702-F1305 Q62702-F1304

Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BFN37 BFN39 Q62702-F1305 Q62702-F1304
Description From old datasheet system
PNP Silicon high-voltage Transistors (Suitable for video output stages in TV sets and switching power supplies high breakdown voltage)

File Size 127.74K  /  4 Page

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    SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BFN36 BFN38 Q62702-F1303 Q62702-F1246
Description From old datasheet system
NPN Silicon high-voltage Transistors (Suitable for video output stages in TV sets and switching power supplies high breakdown voltage)

File Size 127.27K  /  4 Page

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    BFN22 Q62702-F1024 Q62702-F102

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BFN22 Q62702-F1024 Q62702-F102
Description NPN Silicon high-voltage Transistor (Suitable for video output stages in TV sets and switching power supplies high breakdown voltage)
From old datasheet system

File Size 127.76K  /  4 Page

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For high breakdown voltage vceo 12 Found Datasheets File :: 150+       Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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