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ST Microelectronics
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Part No. |
STP11NM60A
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OCR Text |
mdmesh?power mosfet n typical r ds (on) = 0.4 w n high dv/dt n low input capacitance and gate charge n low gate input resistance description the mdmesh ? is a new revolutionary mosfet technology that associates the multiple drain pro- c... |
Description |
N-CHANNEL Power MOSFET
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File Size |
278.54K /
11 Page |
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ST Microelectronics
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Part No. |
STB25NM60N STB25NM60N-1 STB25NM60NT4 STF25NM60N STP25NM60N STW25NM60N
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OCR Text |
.../i2pak/to-247 second generation mdmesh? mosfet table 1: general features world?s lowest on resistance typical r ds (on) = 0.140 ? high dv/dt and avalanche capabilities 100% avalanche tested low input capacitance and gate charge ... |
Description |
N-CHANNEL 650 @Tjmax-0.140&-20A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 SECOND GENERATION mdmesh MOSFET
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File Size |
219.81K /
12 Page |
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it Online |
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意法半导
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Part No. |
STP11NM60
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OCR Text |
mdmesh?power mosfet (*)limited only by maximum temperature allowed (1)i sd <11a, di/dt<400a/s, v dd <v (br)dss ,t j <t jmax typical r ds (on) = 0.4 w high dv/dt and avalanche capabilities 100% avalanche tested low input capacitance ... |
Description |
N-CHANNEL 600V - 0.4ohm-11A TO-220/TO-220FP/D2PAK/I2PAK mdmesh⑩Power MOSFET
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File Size |
555.06K /
12 Page |
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it Online |
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SGS Thomson Microelectronics
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Part No. |
STW45NM50
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OCR Text |
mdmesh ? power mosfet n typical r ds (on) = 0.08 w n high dv/dt and avalanche capabilities n 100% avalanche tested n low input capacitance and gate charge n low gate input resistance n tight process control and high manufacturing yields des... |
Description |
N-CHANNEL 500V - 0.07Ohm - 45A TO-247 mdmesh Power MOSFET
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File Size |
90.09K /
8 Page |
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it Online |
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ST Microelectronics
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Part No. |
STW11NM80
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OCR Text |
mdmesh? mosfet table 1: general features typical r ds (on) = 0.35 ? low gate input resistance low input capacitance and gate charge best r ds (on)*qg in the industry description the mdmesh? associates the multiple drain pro - cess w... |
Description |
N-CHANNEL mdmesh Power MOSFET
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File Size |
391.90K /
14 Page |
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it Online |
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ST Microelectronics
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Part No. |
STB21NM60N
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OCR Text |
.../i2pak/to-247 second generation mdmesh? mosfet table 1: general features 100% avalanche tested low input capacitance and gate charge low gate input resistance description the stx21nm60n is realized with the second generation of mdme... |
Description |
N-CHANNEL POWER MOSFET
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File Size |
491.25K /
16 Page |
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ST Microelectronics
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Part No. |
STB11NM60T4
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OCR Text |
...- 11a to-220/fp/d 2 pak/i 2 pak mdmesh?power mosfet (*)limited only by maximum temperature allowed (1)i sd <11a, di/dt<400a/s, v dd <v (br)dss ,t j <t jmax typical r ds (on) = 0.4 ? high dv/dt and avalanche capabilities 100% avalanche... |
Description |
N-Channel 600V - 0.4Ohm - 11A TO-220 mdmesh POWER MOSFET
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File Size |
338.94K /
12 Page |
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it Online |
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SGS Thomson Microelectronics
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Part No. |
STB12NM50-1 STP12NM50FP
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OCR Text |
mdmesh ? power mosfet n typical r ds (on) = 0.30 w n high dv/dt and avalanche capabilities n 100% avalanche tested n low input capacitance and gate charge n low gate input resistance n tight process control and high manufacturing yields des... |
Description |
N-CHANNEL 500V 0.3OHM 12A TO-220/TO-220FP/I2PAK mdmesh POWER MOSFET
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File Size |
114.96K /
10 Page |
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it Online |
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SGS Thomson Microelectronics
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Part No. |
STP11NM60
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OCR Text |
mdmesh ? power mosfet n typical r ds (on) = 0.4 w n high dv/dt and avalanche capabilities n 100% avalanche tested n low input capacitance and gate charge n low gate input resistance n tight process control and high manufacturing yields desc... |
Description |
N-CHANNEL 600V - 0.4Ohm - 11A TO-220 mdmesh Power MOSFET
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File Size |
45.79K /
6 Page |
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it Online |
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