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				Mitsubishi Electric Semiconductor Mitsubishi Electric Corporation
Part No.	CM20TF-24H
OCR Text	MEDIUM POWER SWITCHING USE INSULATED TYPE A C K GUP EUP S - DIA. (2 TYP.) H N H GVP EVP GWP EWP P D J U N GUN EUN GVN EVN ...Current Rating Amperes (20) 20 VCES Volts (x 50) 24 GuN EuN N GvN EvN GwN EwN Outline Dr...
Description	MEDIUM POWER SWITCHING USE INSULATED TYPE 122 x 32 pixel format, LED Backlight available
File Size	52.39K / 4 Page	View it Online	Download Datasheet

				Intersil Corporation
Part No.	ISL3874 ISL3874IK ISL3874IK96
OCR Text	Medium Access Controller with Baseband Processor with Mini-PCI The Intersil ISL3874 Wireless LAN Integrated Medium Access Controller with I...current data phase of the transaction. A data phase is completed on a rising edge of PCLK where both...
Description	Wireless LAN Integrated Medium Access Controller with Baseband Processor with Mini-PCI
File Size	384.75K / 33 Page	View it Online	Download Datasheet

				Eudyna Devices Inc
Part No.	FLL357ME
OCR Text	Medium & High Power GaAs FET FEATURES * * * * * High Output Power: P1dB=35.5dBm (Typ.) High Gain: G1dB=11.5dB (Typ.) High PAE: add=46% (Typ...Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.C.P. ...
Description	L-Band Medium & High Power GaAs FET
File Size	77.52K / 4 Page	View it Online	Download Datasheet

				Eudyna Devices Inc
Part No.	FLL300IL-1 FLL300IL-2 FLL300IL-3
OCR Text	Medium & High Power GaAs FET FEATURES * * * * * High Output Power: P1dB = 44.5dBm (Typ.) High Gain: G1dB = 12.0dB (Typ.)@1.8GHz (FLL300IL-2...Current Transconductance Pinch-off Voltage Symbol IDSS gm Vp Test Conditions* VDS = 5V, VGS = 0V VDS...
Description	L-Band Medium & High Power GaAs FET
File Size	119.60K / 6 Page	View it Online	Download Datasheet

				Eudyna Devices Inc
Part No.	FLL200IB-1 FLL200IB-2 FLL200IB-3
OCR Text	Medium & High Power GaAs FET FEATURES * * * * * High Output Power: P1dB = 42.5dBm (Typ.) High Gain: G1dB = 13.0dB (Typ.)@1.8GHz (FLL200IB-1...Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.C.P. ...
Description	L-Band Medium & High Power GaAs FET
File Size	120.01K / 6 Page	View it Online	Download Datasheet

				Eudyna Devices Inc
Part No.	FLL107ME
OCR Text	Medium & High Power GaAs FET FEATURES * * * * * High Output Power: P1dB=29.5dBm (Typ.) High Gain: G1dB=13.5dB (Typ.) High PAE: add=47% (Typ...Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.C.P. ...
Description	L-Band Medium & High Power GaAs FET
File Size	78.20K / 4 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	PSS8050 PSS8050D
OCR Text	medium power 25 V transistor Product specification Supersedes data of 2002 Nov 18 2004 Aug 10 Philips Semiconductors Product specific...current capability. APPLICATIONS * Medium power switching and muting * Amplification * Portable radi...
Description	PSS8050; NPN medium power 25 V transistor
File Size	97.19K / 10 Page	View it Online	Download Datasheet

				EUDYNA[Eudyna Devices Inc]
Part No.	FLU10XM
OCR Text	Medium & High Power GaAs FET FEATURES * High Output Power: P1dB=29.5dBm (Typ.) * High Gain: G1dB=14.5dB (Typ.) * High PAE: add=47% (Typ.) *...Current Transconductance Pinch-Off Voltage Gate-Source Breakdown Voltage Output Power at 1 dB G.C.P....
Description	L-Band Medium & High Power GaAs FET
File Size	76.73K / 4 Page	View it Online	Download Datasheet

				Eudyna Devices Inc
Part No.	FSX027X
OCR Text	Medium Power Output: P1dB=24.5dBm(Typ.)@8.0GHz * High Power Gain: G1dB=10dB(Typ.)@8.0GHz * Proven Reliability DRAIN DESCRIPTION The FSX...Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Noise Figure Associated Gai...
Description	GAAS FET & HEMT CHIPS
File Size	52.50K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Sem... MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM20TD-HB QM20
OCR Text	MEDIUM POWER SWITCHING USE INSULATED TYPE QM20TD-HB * * * * * IC Collector current .......................... 20A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................. 250 Insulated Type ...
Description	MEDIUM POWER SWITCHING USE INSULATED TYPE
File Size	75.72K / 5 Page	View it Online	Download Datasheet

For medium-current Found Datasheets File :: 10464 Search Time::1.344ms
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