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mocvd Datasheet PDF File

For mocvd Found Datasheets File :: 117 Search Time::1.141ms
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				MICROSEMI CORP-ANALOG MIXED SIGNAL GROUP MICROSEMI[Microsemi Corporation]
Part No.	LX5510 LX5510-LQ LX5510-LQT
OCR Text	...ar Transistor (HBT) IC process (mocvd). With single low voltage supply of 3.3V 20dB power gain between 2.4-2.5GHz, at a low quiescent current of 65mA. For +19dBm OFDM output power (64QAM, 54Mbps), the PA provides a low EVM (Error-Vector ...
Description	2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER InGaP HBT 2.4-2.5 GHz Power Amplifier
File Size	621.56K / 7 Page	View it Online	Download Datasheet

				MICROSEMI[Microsemi Corporation]
Part No.	LX5511 LX5511LQ
OCR Text	...ar Transistor (HBT) IC process (mocvd). With a single low voltage supply of 3.3V 26dB power gain between 2.3-2.5GHz, at a low quiescent current of 90mA. For 20dBm OFDM output power (64QAM, 54Mbps), the PA provides a low EVM (Error-Vector...
Description	InGaP HBT 2.3 - 2.5 GHz Power Amplifier
File Size	119.74K / 2 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC
Part No.	QL65D6SA
OCR Text	...ev 0 OVERVIEW QL65D6SA is a mocvd grown 650nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 5mW for optoelectronic devices such as Bar Code Reader. APPLICA...
Description	InGaAlP Laser Diode
File Size	83.58K / 7 Page	View it Online	Download Datasheet

				SIRENZA[SIRENZA MICRODEVICES]
Part No.	SZA-2044 SZA-2044Z
OCR Text	... technology and fabricated with mocvd for an ideal combination of low cost and high reliability. This product is specifically designed as a final stage for 802.11b/g and 801.16 equipment in the 2.0-2.7 GHz bands. It can run from a 3V to 5V ...
Description	2.0-2.7 GHz 5V 1W Power Amplifier
File Size	210.82K / 8 Page	View it Online	Download Datasheet

				SIRENZA[SIRENZA MICRODEVICES]
Part No.	STA-6033 STA-6033Z
OCR Text	... technology and fabricated with mocvd for an ideal combination of low cost and high reliability. This product is specifically designed as a final stage for 802.11a equipment in the 4.9 - 5.9 GHz band. It can run from a 3.0V to 3.6V supply. ...
Description	4.9 - 5.9 GHz 3.3V Power Amplifier
File Size	199.65K / 8 Page	View it Online	Download Datasheet

				SIRENZA[SIRENZA MICRODEVICES]
Part No.	SZA-3044 SZA-3044Z
OCR Text	... technology and fabricated with mocvd for an ideal combination of low cost and high reliability. This product is specifically designed as a final or driver stage for 802.16 equipment in the 3.3-3.8 GHz bands. It can run from a 3V to 6V supp...
Description	2.7-3.8GHz 5V 1W Power Amplifier
File Size	381.87K / 8 Page	View it Online	Download Datasheet

				SIRENZA[SIRENZA MICRODEVICES]
Part No.	SZA-5044 SZA-5044Z
OCR Text	... technology and fabricated with mocvd for an ideal combination of low cost and high reliability. This product is specifically designed as a final or driver stage for 802.11a equipment in the 4.9 - 5.9 GHz band for a 5V supply. Optimized on-...
Description	4.9 - 5.9 GHz 5V Power Amplifier
File Size	206.61K / 7 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC
Part No.	QL63F5SA
OCR Text	mocvd grown 635 nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 10 mW for optoelectronic devices such as Optical Leveler and Modules. APPLICATION - Optical L...
Description	InGaAlP Laser Diode
File Size	29.38K / 3 Page	View it Online	Download Datasheet

				Mitsubishi Electric Sem... Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
Part No.	FU-116SLD-F1
OCR Text	...H** structure fabricated by all mocvd process Multiple quantum well *Facet selective-growth buried heterostructure APPLICATION FitL,LAN ABSOLUTE MAXIMUM RATINGS Parameter Laser diode (Tc=25 C) Symbol Conditions CW Rating 2.5 Unit mW...
Description	SC-CONNECTORIZED MODULE SC-CONNECTORIZED MODULE 资深大律师，连接器的模块
File Size	59.75K / 3 Page	View it Online	Download Datasheet

				Mitsubishi Electric Sem... MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	FU-116SLD-F3M1
OCR Text	...H** structure fabricated by all mocvd process Multiple quantum well *Facet selective-growth buried heterostructure APPLICATION FitL,LAN ABSOLUTE MAXIMUM RATINGS Parameter Laser diode (Tc=25 C) Symbol Conditions CW Rating 0.5 Unit mW...
Description	SC-CONNECTORIZED MODULE
File Size	61.07K / 3 Page	View it Online	Download Datasheet

For mocvd Found Datasheets File :: 117 Search Time::1.141ms
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