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Digitron Semiconductors
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| Part No. |
MFE211 MFE212
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| OCR Text |
... nitride passivated mos field effect transistors maximum ratings rating symbol value unit drain source voltage v dsx 20 vdc drain gate voltage v dg1 v dg2 35 35 vdc gate current i g1 i g2 10 10 madc d... |
| Description |
N-CHANNEL DUAL GATE SILICON NITRIDE PASSIVATED MOS FIELD EFFECT TRANSISTORS
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| File Size |
1,131.56K /
5 Page |
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it Online |
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SGS Thomson Microelectronics
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| Part No. |
AN900
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| OCR Text |
...an example, because it uses the mos tech- nology. actually, this technology is used for the majority of the ics manufactured at stmicro- ele...transistors made with the technology. pmos technologies implement p-channel transistors by diffusin... |
| Description |
MCUS - INTRODUCTION TO SEMICONDUCTOR TECHNOLOGY
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| File Size |
488.36K /
15 Page |
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SGS Thomson Microelectronics
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| Part No. |
AN250
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| OCR Text |
mos drive a second-generation ic switch mode controller introduction since the introduction of the sg1524 in 1976, inte- grated circuit cont...transistors. a typical output configuration for a push-pull bipolar transistorpower stage is shown i... |
| Description |
A SECOND GENERATION IC SWITCH MODE CONTROLLER OPTIMIZED FOR HIGH FREQUENCY
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| File Size |
158.77K /
13 Page |
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it Online |
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SGS Thomson Microelectronics
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| Part No. |
AN271
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| OCR Text |
...r transistor or power p-channel mos would be integrated with low level signal circuitry (fig. 3a), but this kind of element is less efficien...transistors or n-channel mos, if directly driven by the supply voltage, are not a good solution beca... |
| Description |
HIGH/SIDE MONOLITHIC SWITCH IN MULTIPOWER/BCD TECHNOLOGY
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| File Size |
99.25K /
9 Page |
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it Online |
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