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  n-channel tmos power fet 1000 Datasheet PDF File

For n-channel tmos power fet 1000 Found Datasheets File :: 150+       Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    IRF530_D ON0283 IRF530-D IRF530/D

Motorola, Inc.
ON Semiconductor
Part No. IRF530_D ON0283 IRF530-D IRF530/D
Description 100V4A tmos power Field Effect Transistor (n-channel Enhancement Mode Silicon Gate100V4A tmos功率场效应管(N沟道增强型硅门))
tmos power fet 14 AMPERES
From old datasheet system
tmos E-fet power Field Effect Transistor n-channel Enhancement-Mode Silicon Gate

File Size 162.84K  /  8 Page

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    MTP3N120E_D ON2600 MTP3N120E-D

ON Semiconductor
Part No. MTP3N120E_D ON2600 MTP3N120E-D
Description tmos E-fet power Field Effect Transistor n-channel Enhancement-Mode Silicon Gate
From old datasheet system
tmos power fet 3.0 AMPERES 1200 VOLTS

File Size 178.47K  /  8 Page

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    MTP2N60E_D ON2581 MTP2N60 MTP2N60E MTP2N60E-D

ON Semiconductor
Motorola, Inc
Part No. MTP2N60E_D ON2581 MTP2N60 MTP2N60E MTP2N60E-D
Description tmos E-fet power Field Effect Transistor n-channel Enhancement - Mode Silicon Gate
From old datasheet system
tmos power fet 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS

File Size 219.23K  /  8 Page

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    MTP16N25E MTP16N25E_D ON2556 MTP16N25E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTP16N25E MTP16N25E_D ON2556 MTP16N25E-D
Description tmos E-fet power Field Effect Transistor n-channel Enhancement-Mode Silicon Gate
tmos power fet 16 AMPERES 250 VOLTS RDS(on) = 0.25 OHM
From old datasheet system

File Size 222.23K  /  8 Page

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    MTP33N10E_D MTP33N10 ON2594 MTP33N10E MTP33N10E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Motorola, Inc.
Part No. MTP33N10E_D MTP33N10 ON2594 MTP33N10E MTP33N10E-D
Description tmos E-fet power Field Effect Transistor n-channel Enhancement-Mode Silicon Gate
From old datasheet system
tmos power fet 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM

File Size 240.12K  /  8 Page

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    MTD20N06V MTD20N06 MTD20N06V_D ON2486 MTD20N06V-D

Motorola Mobility Holdings, Inc.
Motorola, Inc
ON Semiconductor
Part No. MTD20N06V MTD20N06 MTD20N06V_D ON2486 MTD20N06V-D
Description tmos power fet 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM tmos是功率场效应晶体00安培RDS(on)\u003d 0.080欧姆
From old datasheet system
tmos V power Field Effect Transistor DPAK for Surface Mount n-channel Enhancement-Mode Silicon Gate

File Size 256.98K  /  10 Page

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    MTD3N25E MTD3N25E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTD3N25E MTD3N25E-D
Description tmos E-fet power Field Effect Transistor DPAK for Surface Mount n-channel Enhancement-Mode Silicon Gate
tmos power fet 3 AMPERES 250 VOLTS RDS(on) = 1.4 OHM

File Size 253.11K  /  10 Page

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    MTD1N80E MTD1N80E-D

ON Semiconductor
Motorola, Inc
Part No. MTD1N80E MTD1N80E-D
Description tmos E-fet power Field Effect Transistor DPAK for Surface Mount n-channel Enhancement-Mode Silicon Gate
tmos power fet 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHM

File Size 268.90K  /  10 Page

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    MTD1N60E MTD1N60E_D ON2473 MTD1N60E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTD1N60E MTD1N60E_D ON2473 MTD1N60E-D
Description tmos E-fet power Field Effect Transistor DPAK for Surface Mount n-channel Enhancement-Mode Silicon Gate
tmos power fet 1.0 AMPERE 600 VOLTS RDS(on) = 8.0 OHM
From old datasheet system

File Size 266.21K  /  10 Page

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    MTD5N25E MTD5N25E_D ON2508 MTD5N25E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTD5N25E MTD5N25E_D ON2508 MTD5N25E-D
Description tmos E-fet power Field Effect Transistor DPAK for Surface Mount n-channel Enhancement-Mode Silicon Gate
tmos power fet 5.0 AMPERES 250 VOLTS RDS(on) = 1.0 OHM
From old datasheet system

File Size 252.63K  /  10 Page

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For n-channel tmos power fet 1000 Found Datasheets File :: 150+       Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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