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VICOR[Vicor Corporation]
DC/DC变换
Vicor, Corp.
Analog Devices, Inc.
Maxim Integrated Products, Inc.
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| Part No. |
MI-J21-IA MI-J21-IZ MI-J21-MZ MI-J7N-IZ MI-J7N-MY MI-J2L-MY MI-J22-MA MI-J20-MA MI-J20-MY MI-J20-MZ MI-J2M-IA MI-J2M-IY MI-J2M-IZ MI-J2L-MA MI-J2L-MZ MI-J22-MY MI-J22-MZ MI-J51-MA MI-J51-MY MI-J51-MZ MI-J7Z-MZ MI-J00 MI-J20-IA MI-J20-IY MI-J20-IZ MI-J21-IY MI-J21-MA MI-J21-MY MI-J22-IA MI-J22-IY MI-J22-IZ MI-J23-IA MI-J23-IY MI-J23-IZ MI-J23-MA MI-J23-MY MI-J23-MZ MI-J24-IA MI-J24-IY MI-J24-IZ MI-J24-MA MI-J24-MY MI-J24-MZ MI-J2J-IA MI-J2J-IY MI-J2J-IZ MI-J2J-MA MI-J2J-MY MI-J2J-MZ MI-J2K-IA MI-J2K-IY MI-J2K-IZ MI-J2K-MA MI-J2K-MY MI-J2K-MZ MI-J2L-IA MI-J2L-IY MI-J2L-IZ MI-J2M-MA MI-J2M-MY MI-J2M-MZ MI-J2N-IA MI-J2N-IY MI-J2N-IZ MI-J2N-MA MI-J2N-MY MI-J2N-MZ MI-J2P-IA MI-J2P-IY MI-J2P-IZ MI-J2P-MA MI-J2P-MY MI-J2P-MZ MI-J2R-IA MI-J2R-IY MI-J2R-IZ MI-J2R-MA MI-J2R-MY MI-J2R-MZ MI-J2T-IA MI-J2T-IY MI-J2T-IZ MI-J2T-MA MI-J2T-MY MI-J2T-MZ MI-J2V-IA MI-J2V-IY MI-J2V-IZ MI-J2V-MA MI-J2V-MY MI-J2V-MZ MI-J2W-IA MI-J2W-IY MI-J2W-IZ MI-J2W-MA MI-J2W-MY MI-J2W-MZ MI-J2X-IA MI-J2X-IY MI-J2X-IZ MI-J2X-MA MI-J2X-MY MI-J2X-MZ MI-J2Y-IA MI-J2Y-IY MI-J2Y-IZ MI-J2Y-MA MI-J2Y-MY MI-J2Y-MZ MI-J2Z-IA MI-J2Z-IY MI-J2Z-IZ MI-J2Z-MA MI-J2Z-MY MI-J2Z-MZ MI-J50-IA MI-J50-IY MI-J50-IZ MI-J50-MA MI-J50-MY MI-
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| OCR Text |
...7F) 25C Ground Benign: G.B. 50C naval Sheltered: N.S. 65C Airborne Inhabited Cargo: A.I.C. Thermal Characteristics Efficiency Baseplate to sink Thermal shutdown Baseplate operating temperature Storage temperature Mechanical Specifications W... |
| Description |
RES,Wirewound,2KOhms,65WV,5 /-% Tol
GT 8C 8#16 SKT RECP WALL
RESISTOR SILICONE 12 OHM 10W
RESISTOR SILICONE 15 OHM 10W
XCR3032XL-10VQG44I
Flash 16Mb PROM (ST Micro),
Flash 32Mb PROM (ST Micro),
Bar Graph Display; Display Technology:LED; Package/Case:20-DIP; Color:High Efficiency Red; Forward Voltage:2.2V; Light Emitting Area:10 segments
Bar Graph Display; Display Technology:LED; Package/Case:20-DIP; Color:High Efficiency Red; Forward Voltage:2.0V; Light Emitting Area:10 segments
Gate / Inverter Logic IC; Logic Type:Dual 4-Input NOR Gate; Logic Family:4000; Logic Base Number:4002; Package/Case:14-DIP
BACKSHELL DB37 METALIZED PLASTIC
Replaced by PTN78000A,PTN04050C :
FLUKE-117 CALIBRATED BY NEWARK INONE SERVICES
HVAC Digital Multimeter and Infrared Thermometer Combo Kit; RoHS Compliant: NA
Bipolar Transistor; Collector Emitter Voltage, Vceo:800V; Transistor Polarity:NPN; Power Dissipation:70W; C-E Breakdown Voltage:1500V; DC Current Gain Min (hfe):5; Collector Current:8A; Package/Case:3-TO-3PML
RESISTOR WIREWOUND 390 OHM 10W
RF/Coaxial Connector; RF Coax Type:SMA; Contact Termination:Crimp; Body Style:Right Angle Plug; RG Cable Type:58, 58A, 58C, 141, 303, LMR195, Belden 7806A RoHS Compliant: Yes
RESISTOR WIREWOUND 35 OHM 10W
T-PNP-SI QUAD GEN PURPOSE
T-NPN-SI-QUAD GEN PURP
Amplifier, Other
Bipolar Transistor; Current Rating:150mA; Voltage Rating:24V
KPT 3C 3#20 SKT RECP
D-SI 70PRV .1A
Gate Logic IC; Logic Type:Gate; Logic Family:4000; Logic Base Number:4001; Package/Case:14-DIP; Number of Circuits:4; Mounting Type:Through Hole RoHS Compliant: Yes
Darlington Bipolar Transistor; Mounting Type:Through Hole; Package/Case:TO-3; Current Rating:12A; Voltage Rating:100V RoHS Compliant: Yes
Darlington Bipolar Transistor; Package/Case:TO-3; Mounting Type:Through Hole; Current Rating:12A; Voltage Rating:100V
Thyristor; Current Rating:8A; Mounting Type:Through Hole; Package/Case:TO-64; Current, It av:8A; Repetitive Reverse Voltage Max, Vrrm:400V; Voltage Rating:400V
Bipolar Transistor; Transistor Polarity:N Channel; C-E Breakdown Voltage:850V; DC Current Gain Min (hfe):5; Collector Current:15A; Package/Case:TO-3; Voltage Rating:450V
Small Signal Bipolar Transistor; Collector Emitter Voltage, Vceo:80V; Transistor Polarity:N Channel; Power Dissipation:0.8W; C-E Breakdown Voltage:80V; DC Current Gain Min (hfe):15; Collector Current:1A; Package/Case:TO-39
Bipolar Transistor; Transistor Polarity:PNP; Power Dissipation:5W; C-E Breakdown Voltage:320V; DC Current Gain Min (hfe):15; Collector Current:10A
IC; Package/Case:12-lead quad in-line
T-NPN-SI GEN PURP AMP
Bipolar Transistor; Collector Emitter Voltage, Vceo:24V; Transistor Polarity:PNP; C-E Breakdown Voltage:12V; DC Current Gain Min (hfe):110; Collector Current:100mA; Package/Case:TO-5; Current Rating:0.1A; Voltage Rating:24V
T-PNP- GE-AF PREAMP-DR-PO
RESISTOR WIREWOUND 5.6K OHM 3W
Bipolar Transistor; Current Rating:1.5A; Voltage Rating:50V
T-NPN-SI-AF DRIVER
; Transistor Polarity:N Channel; C-E Breakdown Voltage:140V; DC Current Gain Min (hfe):20; Collector Current:12A; Package/Case:TO-3P; DC Current Gain Max (hfe):200; Mounting Type:Through Hole
Single Digit Seven Segment Display; Number of Digits/Alpha:1; Digit/Alpha Height:7.62mm; Color:Red; Luminous Intensity (MSCP):500ucd
LED-DISPLAY-RED RoHS Compliant: Yes
Optoisolator; Collector Emitter Voltage, Vceo:30V; Transistor Polarity:NPN; Power Dissipation:250mW; C-E Breakdown Voltage:60V; DC Current Gain Min (hfe):50000; Collector Current:125mA; Package/Case:6-DIP
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:1V; Transistor Polarity:N Channel; Power Dissipation:5W; DC Current Gain Min (hfe):25; Collector Current:400mA; DC Current Gain Max (hfe):200; Power (Ptot):5W
JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-30V; Zero Gate Voltage Drain Current Min, Idss:5mA; Zero Gate Voltage Drain Current Max, Idss:15mA; Gate-Source Cutoff Voltage Max, Vgs(off):-6V; Package/Case:TO-92
Optocoupler; Optocoupler Output Type:Transistor; Isolation Voltage:1500Vrms; Package/Case:6-DIP; Mounting Type:Through Hole; C-E Breakdown Voltage:30V; DC Current Gain Min (hfe):50; Transistor Polarity:NPN
OPTOISOLATOR/DARL
NPN-Output dc-Input Optocoupler,1-CHANNEL,3.5kV ISOLATION,DIP
Optocoupler; Optocoupler Output Type:Transistor; Isolation Voltage:7500Vrms; Package/Case:6-DIP; Collector Current:0.05A; Mounting Type:Through Hole; Voltage Rating:30V; Transistor Polarity:NPN
Optocoupler; Optocoupler Output Type:Transistor; Isolation Voltage:7500Vrms; Package/Case:6-DIP; Collector Current:0.5A; Mounting Type:Through Hole; C-E Breakdown Voltage:80V; DC Current Gain Max (hfe):3.5; Transistor Polarity:NPN
Replaced by PTN04050C :
Bipolar Transistor; Package/Case:TO-3P; Current Rating:10A; Voltage Rating:800V
T-NPN-SI W/ 10K RESISTOR
T-NPN-SI COLOR TV OUTPUT
TVS UNI-DIR 64V 1500W SMC
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:300mV; Power Dissipation, Pd:0.3W; DC Current Gain Min (hfe):350; C-E Breakdown Voltage:120V; Collector Current:100mA; DC Current Gain Max (hfe):700; Power (Ptot):300mW RoHS Compliant: Yes
Bipolar Transistor; Collector Emitter Voltage, Vceo:80V; Transistor Polarity:NPN; Power Dissipation:800mW; C-E Breakdown Voltage:80V; DC Current Gain Min (hfe):1000; Collector Current:1A; Package/Case:3-TO-92
T-NPN-SI HI SPEED SWITCH
T-NPN SI- HI VLTG/SPEED
Bipolar Transistor; Package/Case:TO-3P; Current Rating:6A; Voltage Rating:800V
Bipolar Transistor; Current Rating:12A; Voltage Rating:400V
Bipolar Transistor; Collector Emitter Voltage, Vceo:450V; Transistor Polarity:NPN; Power Dissipation:150W; DC Current Gain Min (hfe):10; Collector Current:15A; Package/Case:3-TO-218; Terminal Type:3; Current Rating:15A
Bipolar Transistor; Collector Emitter Voltage, Vceo:450V; Transistor Polarity:NPN; Power Dissipation:125W; Collector Current:8A; Package/Case:3-TO-218; Terminal Type:3; Current Rating:8A; Number of Cross References:81
SRAM Memory IC; Memory Type:MOS SRAM; Access Time, Tacc:55ns; Memory Configuration:4K x 1
Bipolar Transistor; Current Rating:4A; Voltage Rating:80V
milirtary DC-CD Converters 10 to 50W
TVS BIDIRECT 1500W 64V SMC
TVS UNIDIRECT 1500W 7.0V SMC
Military DC-DC Converters 10 to 50W 军事的DC - DC转换00W
CAP/ 27P 3K K CF X9S 军事的DC - DC转换00W
Military DC-DC Converters 10 to 50W 军事的DC - DC转换100W
Military DC-DC Converters 10 to 50W 军事的DC - DC转换1050W
IC; Mounting Type:Through Hole; Package/Case:9-SIP 军事的DC - DC转换00W
Military DC-DC Converters 10 to 50W 军事DC - DC转换00W
32 MCELL 3 VOLT ZERO POWER ISP CPLD - NOT RECOMMENDED for NEW DESIGN 军事的DC - DC转换00W
CONNECTOR ACCESSORY 军事的DC - DC转换00W
FLUKE-116 CALIBRATED BY NEWARK INONE SERVICES RoHS Compliant: NA 军事的DC - DC转换00W
Flash 16Mb PROM (ST Micro) 军事的DC - DC转换00W
Bipolar Transistor; Collector Emitter Voltage, Vceo:30V; Power Dissipation, Pd:625mW; DC Current Gain Min (hfe):50; C-E Breakdown Voltage:30V; Collector Current:300mA; DC Current Gain Max (hfe):800; Power (Ptot):750mW 军事的DC - DC转换00W
GT 8C 8#16 PIN RECP WALL 军事的DC - DC转换00W
Gate Logic IC; Logic Type:Gate; Logic Family:4000; Logic Base Number:4011; Package/Case:14-DIP; Number of Circuits:4; Mounting Type:Through Hole 军事的DC - DC转换00W
SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):10A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:8mA 军事的DC - DC转换00W
Thyristor; Current Rating:10A; Mounting Type:Through Hole; Package/Case:TO-220; Current, It av:10A; Repetitive Reverse Voltage Max, Vrrm:600V; Voltage Rating:600V RoHS Compliant: Yes 军事的DC - DC转换00W
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| File Size |
83.54K /
2 Page |
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it Online |
Download Datasheet
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Intersil, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
FSL913A0D FSL913A0D1 FSL913A0D3 FSL913A0R FSL913A0R4 FSL913A0R1 FSL913A0R3 FSL9130R3 FSL9130R4
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| OCR Text |
...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37... |
| Description |
7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 7 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 7A 100V的，0.300欧姆，拉德硬，SEGR性，P通道功率MOSFET
7A/ -100V/ 0.300 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
5A/ -100V/ 0.680 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
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| File Size |
58.67K /
8 Page |
View
it Online |
Download Datasheet |
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INTERSIL[Intersil Corporation]
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| Part No. |
JANSR2N7408 FN4637
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| OCR Text |
...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), TC = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 2... |
| Description |
Quadruple 2-Input Positive-NAND Gates 14-VQFN -40 to 85
Formerly Available As FSF450R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
From old datasheet system
Formerly Available As FSF450R4, Radiation Hardened, SEGR Resistant,N-Channel Power MOSFETs
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| File Size |
54.83K /
8 Page |
View
it Online |
Download Datasheet |
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Intersil, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
FSS230R FSS230D FN4054 FSS230R4 FSS230D1 FSS230D3 FSS230R1 FSS230R3
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| OCR Text |
...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37... |
| Description |
RC NETWORK 220 OHM/100PF 5% SMD 8 A, 200 V, 0.44 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
From old datasheet system
8A,200V,0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
8A/ 200V/ 0.440 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
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| File Size |
45.76K /
8 Page |
View
it Online |
Download Datasheet |
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INTERSIL[Intersil Corporation]
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| Part No. |
FSS234R FSS234D FN4053 FSS234R4 FSS234D1 FSS234D3 FSS234R1 FSS234R3
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| OCR Text |
...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37... |
| Description |
From old datasheet system
6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
6A/ 250V/ 0.600 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
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| File Size |
44.72K /
8 Page |
View
it Online |
Download Datasheet |
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Intersil, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
FSS23A0R FSS23A0D FSS23A0D1 FSS23A0D3 FSS23A0R1 FN4485 FSS23A0R4 FSS23A0R3
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| OCR Text |
...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37... |
| Description |
9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 200 V, 0.33 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
From old datasheet system
9A/ 200V/ 0.330 Ohm/ Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
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| File Size |
56.22K /
8 Page |
View
it Online |
Download Datasheet |
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INTERSIL[Intersil Corporation]
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| Part No. |
FSS23A4R FSS23A4D FN4484 FSS23A4R4 FSS23A4D1 FSS23A4D3 FSS23A4R1 FSS23A4R3
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| OCR Text |
...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37... |
| Description |
7A/ 250V/ 0.460 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
From old datasheet system
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| File Size |
46.20K /
8 Page |
View
it Online |
Download Datasheet |
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Intersil
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| Part No. |
FSYA9250R FSYA9250D FN4583
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| OCR Text |
...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37... |
| Description |
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
From old datasheet system
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| File Size |
55.57K /
8 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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