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ON Semiconductor
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| Part No. |
1SMB5.0AT3 1SMB58AT3 1SMB15AT3 1SMB20AT3
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| OCR Text |
...be affected. 1. 10 x 1000 s, non?repetitive. 2. 1 in square copper pad, fr?4 board. 3. fr?4 board, using on semiconductor minimum recomme...inductive effects in the device are due to actual turn-on time (time required for the device to go f... |
| Description |
Plastic Surface Mount Zener Overvoltage Transienc Suppressor(峰值功75W，塑料表贴封装，5.0V变位电压，齐纳瞬变电压抑制器)
Plastic Surface Mount Zener Overvoltage Transienc Suppressor(峰值功75W，塑料表贴封装，58V变位电压，齐纳瞬变电压抑制器) 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
Plastic Surface Mount Zener Overvoltage Transienc Suppressor(峰值功175W，塑料表贴封装，15V变位电压，齐纳瞬变电压抑制器) 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
Plastic Surface Mount Zener Overvoltage Transienc Suppressor(峰值功75W，塑料表贴封装，20V变位电压，齐纳瞬变电压抑制器) 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
Plastic Surface Mount Zener Overvoltage Transienc Suppressor(宄板????75W锛????〃璐村?瑁??20V????靛?锛??绾崇????????跺?)
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| File Size |
65.91K /
7 Page |
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Mitsubishi Electric Corporation
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| Part No. |
BCR8PM-20
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| OCR Text |
...ewave 1 full cycle, peak value, non-repetitive value corresponding to 1 cycle of half wave 60hz, surge on-state current typical value t a =2...inductive load) (dv/dt) c symbol unit v/ m s 1. junction temperature t j =125 c 2. rate of decay o... |
| Description |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
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| File Size |
67.83K /
5 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric Corporation
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| Part No. |
BCR8PM-18
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| OCR Text |
...ewave 1 full cycle, peak value, non-repetitive value corresponding to 1 cycle of half wave 60hz, surge on-state current typical value t a =2...inductive load) (dv/dt) c symbol unit v/ m s 1. junction temperature t j =125 c 2. rate of decay o... |
| Description |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
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| File Size |
67.99K /
5 Page |
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it Online |
Download Datasheet |
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RCD COMPONENTS INC.
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| Part No. |
MWM2-100 MWM2-1000 MWM2-1001 MWM2-101 MWM2-102 MWM2-1R0 MWM2-1R00 MWM2-R005 MWM2-R0075 MWM2-R01 MWM2-R010 MWM2-R012 MWM2-R10 MWM2-R100 MWM2P-100 MWM2P-1000 MWM2P-1001 MWM2P-101 MWM2P-102 MWM2P-1R0 MWM2P-1R00 MWM2P-R005 MWM2P-R0075 MWM2P-R01 MWM2P-R010 MWM2P-R012 MWM2P-R10 MWM2P-R100 MWM2L-100 MWM2X-100 MWM2X-1000 MWM2X-1001 MWM2X-101 MWM2X-102 MWM2X-1R0 MWM2X-1R00 MWM2X-R005 MWM2X-R0075 MWM2X-R01 MWM2X-R010 MWM2X-R012 MWM2X-R10 MWM2X-R100 MWM2F-100 MWM2F-1000 MWM2F-1001 MWM2F-101 MWM2L-1000 MWM2L-R01 MWM2M-R01 MWM2E-100 MWM2E-R100 MWM2E-1000 MWM2E-1001 MWM2E-R005 MWM2E-R0075 MWM2E-R010 MWM2E-R012 MWM2M-1R00 MWM2F-R005 MWM2F-R0075 MWM2F-R01 MWM2F-R010 MWM2F-R012 MWM2F-1R0 MWM2F-1R00 MWM2L-R005 MWM2L-R0075 MWM2L-R010 MWM2L-R012 MWM2L-R10 MWM2L-R100 MWM2M-R005 MWM2M-R0075 MWM2M-R010 MWM2M-R012 MWM2M-R10 MWM2M-R100 MWM2M-100 MWM2M-1000 MWM2M-1001 MWM2M-101 MWM2M-102 MWM2E-1R0 MWM2F-R10 MWM2F-R100 MWM2L-1001 MWM2E-1R00
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| OCR Text |
...y program!
OPTIONS Option X: non-inductive (refer to application note below) Option P: Increased Pulse Capability Option M: Power metal film element Option L: Low profile non-inductive metal plate design Option E: Low thermal EMF design ... |
| Description |
SM POWER RESISTORS, 1/2W - 5W, .0005Ω - 1MΩ WIREWOUND, FILM, & METAL PLATE
SM POWER RESISTORS, 1/2W - 5W, .0005楼? - 1M楼? WIREWOUND, FILM, & METAL PLATE
SM POWER RESISTORS, 1/2W - 5W, .0005ヘ - 1Mヘ WIREWOUND, FILM, & METAL PLATE
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| File Size |
144.34K /
1 Page |
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HUNTINGTON ELECTRIC
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| Part No. |
ALSR-1
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| OCR Text |
...: f = 1%, j = 5%, k = 10% non-inductive: ayrton-perry type non-inductive winding is available. when required add ni to the part number. leads: hot tin-dipped leads with dimensions as shown in the above chart are standard. however, ... |
| Description |
AXIAL LEAD WIREWOUND RESISTORS
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| File Size |
84.01K /
1 Page |
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Mitsubishi Electric Corporation
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| Part No. |
BCR8PM-14
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| OCR Text |
...ewave 1 full cycle, peak value, non-repetitive value corresponding to 1 cycle of half wave 60hz, surge on-state current typical value t a =2...inductive load) (dv/dt) c symbol unit v/ m s 1. junction temperature t j =125 c 2. rate of decay o... |
| Description |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
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| File Size |
68.10K /
5 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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