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TT electronics Semelab Limited Semelab(Magnatec)
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Part No. |
SML100A9
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Description |
N-CHANNEL ENHANCEMENT mode HIGH VOLTAGE POWER MOSFETS N-Channel Enhancement mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
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File Size |
20.76K /
2 Page |
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it Online |
Download Datasheet |
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SemeLAB SEME-LAB[Seme LAB]
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Part No. |
SML80A12 SML100A9
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Description |
N-CHANNEL ENHANCEMENT mode HIGH VOLTAGE POWER MOSFETS N-Channel Enhancement mode High Voltage Power MOSFET(Vdss:800V,Id(cont):11.5A,Rds(on):0.650Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):11.5A,Rds(on):0.650Ω))
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File Size |
20.46K /
2 Page |
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it Online |
Download Datasheet |
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SemeLAB SEME-LAB[Seme LAB]
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Part No. |
SML80H12 SML100H11
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Description |
N-CHANNEL ENHANCEMENT mode HIGH VOLTAGE POWER MOSFETS N-Channel Enhancement mode High Voltage Power MOSFET(Vdss:800V,Id(cont):11.5A,Rds(on):0.67Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):11.5A,Rds(on):0.67Ω))
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File Size |
26.03K /
2 Page |
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it Online |
Download Datasheet |
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FAIRCHILD[Fairchild Semiconductor]
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Part No. |
NDH854P
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Description |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity P Channel current Id cont. 5.1 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V P-Channel Enhancement mode Field Effect Transistor
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File Size |
84.65K /
8 Page |
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it Online |
Download Datasheet |
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FAIRCHILD[Fairchild Semiconductor]
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Part No. |
NDH8436
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Description |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel current Id cont. 5.8 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V N-Channel Enhancement mode Field Effect Transistor
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File Size |
293.10K /
6 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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