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  rectifiers-20v-200v Datasheet PDF File

For rectifiers-20v-200v Found Datasheets File :: 59    Search Time::6ms    
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    IR1167ASPBF IR1167ASPBF09 IR1167BSPBF

International Rectifier
Part No. IR1167ASPBF IR1167ASPBF09 IR1167BSPBF
OCR Text ...wer mosfets used as synchronous rectifiers in isolated flyback converters. the ic can control one or more paralleled n-mosfets to emulate th...20v ? direct sensing of mosfet drain voltage ? minimal component count ? simple design ? lead-free ?...
Description SmartRectifierTM CONTROL IC

File Size 344.04K  /  16 Page

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    IR1166SPBF

International Rectifier
Part No. IR1166SPBF
OCR Text ...wer MOSFETs used as synchronous rectifiers in isolated Flyback converters. The IC can control one or more paralleled N-MOSFETs to emulate th...20V, Gate off SOIC-8, TAMB=25C Human Body Model* * Per EIA/JESD22-A114-B( discharging a 100pF ...
Description SMARTRECTIFIER CONTROL IC

File Size 337.15K  /  15 Page

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    IRHM93230 IRHM9230 IRHM9230-15

International Rectifier
Part No. IRHM93230 IRHM9230 IRHM9230-15
OCR Text ... rad hard hexfet international rectifiers p-channel rad hard technology hexfets demonstrate excellent threshold voltage stability and break...20v i gss gate-to-source leakage reverse 100 v gs = 20v q g total gate charge 35 v gs = -12v, ...
Description Simple Drive Requirements
-200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package

File Size 104.17K  /  4 Page

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    IRHN93230 IRHN9230

International Rectifier
Part No. IRHN93230 IRHN9230
OCR Text ... rad hard hexfet international rectifiers p-channel rad hard technology hexfets demonstrate excellent threshold voltage stability and break...20v i gss gate-to-source leakage reverse 100 v gs = 20v q g total gate charge 45 v gs = -12v, ...
Description -200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-1 package
-200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-1 package

File Size 41.52K  /  4 Page

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    IRHI7360SE

International Rectifier
Part No. IRHI7360SE
OCR Text ... rad hard hexfet international rectifiers (see) rad hard technology hexfets demonstrate virtual immunity to see fail- ure. additionally, u...20v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 180 v gs =12v,...
Description Simple Drive Requirements
400V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-259AA package

File Size 34.18K  /  4 Page

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    IRH93230 IRH9230

International Rectifier
Part No. IRH93230 IRH9230
OCR Text ... rad hard hexfet international rectifiers p-channel rad hard technology hexfets demonstrate excellent threshold voltage stability and break...20v i gss gate-to-source leakage reverse 100 v gs = +20v q g total gate charge 35 v gs = -12v,...
Description -200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-204AA package
-200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-204AA package

File Size 60.46K  /  4 Page

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    IRHF7310SE

International Rectifier
Part No. IRHF7310SE
OCR Text ... rad hard hexfet international rectifiers (see) rad hard technology hexfets demonstrate virtual immunity to see fail- ure. additionally, ...20v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 10 v gs =12v, ...
Description N-Channel Single Event Effect (SEE) Rad Hard HEXFET Transistor(N 沟道 单事件效Rad Hard HEXFET技术晶体管)

File Size 36.02K  /  4 Page

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    International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRHM8260 IRHM3260 IRHM4260 IRHM7260
OCR Text ...7433 TO-254AA International Rectifiers RADHard HEXFET(R) technology provides high performance power MOSFETs for space applications. This...20V VGS = -20V VGS =12V, ID =35A VDS = 100V VDD = 100V, ID =35A VGS =12V, RG = 2.35 BVDSS Drain-t...
Description RADIATION HARDENED POWER MOSFET THRU-HOLE(T0-254AA) 抗辐射功率MOSFET的通孔T0 254AA

File Size 263.31K  /  8 Page

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    IRHN7230 IRHN7230PBF IRHN7230-15 IRHN8230

International Rectifier
Part No. IRHN7230 IRHN7230PBF IRHN7230-15 IRHN8230
OCR Text ...Y (R) SMD-1 International Rectifiers RADHard HEXFET(R) technology provides high performance power MOSFETs for space applications. This...20V VGS = -20V VGS =12V, ID =9.0A VDS = 100V VDD = 100V, ID =9.0A VGS =12V, RG = 7.5 BVDSS Drain-...
Description 200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package
9 A, 200 V, 0.49 ohm, N-CHANNEL, Si, POWER, MOSFET
RADIATION HARDENED POWER MOSFET
200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package
Simple Drive Requirements

File Size 440.35K  /  12 Page

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For rectifiers-20v-200v Found Datasheets File :: 59    Search Time::6ms    
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