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  rf power dield effect transist Datasheet PDF File

For rf power dield effect transist Found Datasheets File :: 150+       Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    AH1897 AH1897-FA-7

Diodes Incorporated
Part No. AH1897 AH1897-FA-7
Description Analog - Sensors - Hall effect Switches - Omnipolar Hall effect Switches
HIGH SENSITIVITY MICROpower OMNIPLOAR HALL-effect SWITCH

File Size 289.30K  /  8 Page

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    3260 A3260UA-TL A3260LH A3260LT A3260UA A3260 A3260LUA-TL A3260EUA-TL A3260LLH

Allegro MicroSystems, Inc.
ALLEGRO[Allegro MicroSystems]
Part No. 3260 A3260UA-TL A3260LH A3260LT A3260UA A3260 A3260LUA-TL A3260EUA-TL A3260LLH
Description 2-wire chopper-stabbilzed,precision hall-effect bipolar switch
320 x 240 pixel format, CFL backlight available with power harness
2-Wire,Chopper-Stabilized, Precision Hall effect Bipolar Switch(2斩波稳定,精密霍尔效应双极开
2-WIRE/ CHOPPER-STABILIZED/ PRECISION HALL-effect BIPOLAR SWITCH
2-WIRE, CHOPPER-STABILIZED, PRECISION HALL-effect BIPOLAR SWITCH

File Size 184.62K  /  12 Page

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    3421 A3422EKA A3422LKA A3421EKA A3421LKA A3421 A3422 A3421EKA-TL A3421LKA-TL A3422EKA-TL A3422LKA-TL

ALLEGRO[Allegro MicroSystems]
Allegro MicroSystems, Inc.
Part No. 3421 A3422EKA A3422LKA A3421EKA A3421LKA A3421 A3422 A3421EKA-TL A3421LKA-TL A3422EKA-TL A3422LKA-TL
Description Hall-effect,direction-detection sensor
HALL-effect, DIRECTION-DETECTION SENSORS
HALL-effect DIRECTION-DETECTION SENSORS
HALL-effect/ DIRECTION-DETECTION SENSORS
Hall effect Direction-Detection Sensor(霍尔效应定位检测传感器)
Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:20-41

File Size 157.33K  /  12 Page

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    IRFF110 IRFF111 IRFF112 IRFF113

General Electric Solid State
GE Solid State
Part No. IrfF110 IrfF111 IrfF112 IrfF113
Description N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A.
power MOS Field-effect transistors
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.

File Size 173.01K  /  5 Page

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    XP152A12C0MR

TOREX SEMICONDUCTOR LTD.
TOREX[Torex Semiconductor]
Part No. XP152A12C0MR
Description MICRO power HALL-effect W/TIN PLATING
power MOS FET

File Size 145.33K  /  4 Page

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    MRF19060 MRF19060R3 MRF19060SR3

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Part No. Mrf19060 Mrf19060R3 Mrf19060SR3
Description rf power FIELD effect transistORS L BAND, Si, N-CHANNEL, rf power, MOSFET

File Size 382.95K  /  8 Page

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    MRF19030 MRF19030R3 MRF19030SR3

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
Part No. Mrf19030 Mrf19030R3 Mrf19030SR3
Description rf power FIELD effect transistORS L BAND, Si, N-CHANNEL, rf power, MOSFET

File Size 386.08K  /  8 Page

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    IRFD112 IRFD113

GE Solid State
Part No. IrfD112 IrfD113
Description (IrfD112 / IrfD113) power-MOSFET FIELD effect power transistOR

File Size 135.03K  /  2 Page

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    MTD6N15 MTD6N15-1 MTD6N15T4 MTD6N15T4G

ON Semiconductor
Part No. MTD6N15 MTD6N15-1 MTD6N15T4 MTD6N15T4G
Description power Field effect transistor DPAK for Surface Mount
TMOS power 150V .3R

File Size 88.70K  /  8 Page

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    MRF21125S MRF21125 MRF21125SR3

Motorola Mobility Holdings, Inc.
Motorola, Inc
MOTOROLA[Motorola Inc]
Part No. Mrf21125S Mrf21125 Mrf21125SR3
Description rf power FIELD effect transistORS S BAND, Si, N-CHANNEL, rf power, MOSFET
Mrf21125, Mrf21125S, Mrf21125SR3 2170 MHz, 125 W, 28 V Lateral N-Channel rf power MOSFETs

File Size 378.36K  /  12 Page

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