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  s m Datasheet PDF File

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    2SB642

PANASONIC[Panasonic Semiconductor]
Part No. 2sB642
OCR Text ....0 1.0 2.40.2 2.00.2 3.50.1 s Features q q 1.5 0.4 1.5 R0.9 R0.9 High foward current transfer ratio hFE. m type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. ...
Description silicon PNP epitaxial planer type(silicon PNP epitaxial planer type)

File Size 49.24K  /  3 Page

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    2SB643 2SB644 2SD639 2SD638

PANASONIC CORP
PANASONIC[Panasonic Semiconductor]
Part No. 2sB643 2sB644 2sD639 2sD638
OCR Text ....2 2.00.2 3.50.1 Unit: mm s Features q 1.5 R0.9 R0.9 1.00.1 0.85 Parameter Collector to base voltage Collector to 2sB643 ...m Type mold Package 2.5 2.5 s Electrical Characteristics Parameter Collector cutoff current Col...
Description silicon PNP epitaxial planer type(For low-power general amplification)

File Size 38.74K  /  2 Page

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    2SB715 2SB716 2SB716A

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2sB715 2sB716 2sB716A
OCR Text ...censes of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third pa...
Description silicon PNP Epitaxial 硅外延进步党
silicon PNP Transistor

File Size 31.71K  /  6 Page

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    2SB727 2SB727K

HITACHI[Hitachi Semiconductor]
Part No. 2sB727 2sB727K
OCR Text ....5 -3.0 -2.0 -3.5 -- -- V V V V s s Unit V V A A Test conditions I C = -25 mA, RBE = I E = -50 mA, IC = 0 VCB = -120 V, IE = 0 VCE = -100 V...m= 10 tio era PW Op C) DC = 25 (T C -1.0 -0.3 Ta = 25C -0.1 1 shot pulse -0.03 -1 20 0 5...
Description silicon PNP Epitaxial

File Size 36.22K  /  6 Page

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    2SB745 2SB745A 2SD661A 2SB0745 2SD661

Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2sB745 2sB745A 2sD661A 2sB0745 2sD661
OCR Text ...rcuit board. (Ta=25C) 1.0 s 2.50.1 1.0 Features 1.5 1.5 R0.9 R0.9 1.00.1 R 0. s Absolute maximum Ratings Para...m Type mold Package s Electrical Characteristics Parameter Collector cutoff current Collector to...
Description silicon PNP epitaxial planer type(For low-frequency and low-noise amplification) 100 mA, 55 V, NPN, si, smALL sIGNAL TRANsIsTOR

File Size 49.87K  /  3 Page

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    2SB788 2SD958

PANASONIC[Panasonic Semiconductor]
Part No. 2sB788 2sD958
OCR Text ....2 2.00.2 3.50.1 Unit: mm s Features q q q 1.5 R0.9 R0.9 0.85 s Absolute maximum Ratings Parameter Collector to base voltag...m Type mold Package s Electrical Characteristics Parameter Collector cutoff current Collector to...
Description silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)

File Size 35.77K  /  2 Page

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    2SB790 2SD969

http://
PANASONIC[Panasonic Semiconductor]
Part No. 2sB790 2sD969
OCR Text ....2 2.00.2 3.50.1 Unit: mm s Features q q 1.5 0.4 1.5 R0.9 R0.9 Low collector to emitter saturation voltage VCE(sat). m type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed c...
Description silicon PNP epitaxial planer type(silicon PNP epitaxial planer type)

File Size 36.83K  /  2 Page

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    2SB819

Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2sB819
OCR Text ....2 2.00.2 3.50.1 Unit: mm s Features q q q 1.5 R0.9 R0.9 0.85 0.550.1 0.450.05 1.250.05 s Absolute maximum Ratings P...m Type mold Package Printed circuit board: Copper foil area of thickness of 1.7mm for the collect...
Description silicon PNP epitaxial planer type(For low-frequency output amplification) 1500 mA, 40 V, PNP, si, smALL sIGNAL TRANsIsTOR

File Size 46.30K  /  3 Page

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    2SB955 2SB955K

HITACHI[Hitachi Semiconductor]
Part No. 2sB955 2sB955K
OCR Text ...0 -2.0 -3.5 3.0 -- -- V V V V V s s Unit V V A A Test conditions I C = -25 mA, RBE = I E = -200 mA, IC = 0 VCB = -120 V, IE = 0 VCE = -100 ...m 1 s1 = (T C m ion at er Op = 30 10 DC 20 10 0 50 100 Case temperature TC (C)...
Description silicon PNP Triple Diffused

File Size 34.71K  /  6 Page

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    2SC5003

SANKEN[Sanken electric]
Part No. 2sC5003
OCR Text ... IB1 (A) 0.8 IB2 (A) -1.6 tstg (s) 4.0max tf (s) 0.2max 3.35 1.5 B C E Weight : Approx 6.5g a. Type No. b. Lot No. IC -...m aximu m Power Dissipa tion P C( W) 10 5 60 W ith In fin ite he 5 40 at si 1 W...
Description silicon NPN Triple Diffused Planar Transistor(Display Horizontal Deflection Output/ switching Regulator and General Purpose)
silicon NPN Triple Diffused Planar Transistor(Display Horizontal Deflection Output, switching Regulator and General Purpose)

File Size 24.73K  /  1 Page

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