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INTERSIL[Intersil Corporation] Intersil, Corp.
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Part No. |
RURP8100 MUR8100E FN2780 MURP810
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Description |
8A/ 1000V ultrafast Diodes From old datasheet system (MUR8100E / MURP8100) 8A / 1000V ultrafast Diodes 8A, 1000V ultrafast Diodes(8A, 1000V超快二极用于开关电 8 A, 1000 V, silicon, RECTIFIER DIODE, TO-220AC 8A, 1000V ultrafast Diodes 8A条,1000V共超快二极管
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File Size |
49.04K /
4 Page |
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Infineon
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Part No. |
SDP10S30 SDB10S30SMD SDT10S30
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Description |
silicon carbide schottky Diodes - 10A diode in TO220-3 package silicon carbide schottky Diodes - 10A diode in TO263 package silicon carbide schottky Diodes - 10A diode in TO220-2 package
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File Size |
575.47K /
9 Page |
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Intersil, Corp. INTERSIL[Intersil Corporation]
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Part No. |
RURD620S FN3640 RURD620
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Description |
6A/ 200V ultrafast Diodes Mechanism, high speeed, 3-inch ELM w/low profile cutter, one tab 6 A, 200 V, silicon, RECTIFIER DIODE, TO-251 6A 200V ultrafast Diodes From old datasheet system 6A, 200V ultrafast Diodes
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File Size |
49.70K /
4 Page |
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CREE POWER
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Part No. |
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
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Description |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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File Size |
273.34K /
17 Page |
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it Online |
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Price and Availability
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