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IXYS[IXYS Corporation]
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| Part No. |
IXGN200N60 IXGN200N60A
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| OCR Text |
... V V V A A A A W C C C V~ V~
sot-227b, miniBLOC
E G
E C G = Gate, C = Collector, E = Emitter either emitter terminal can be used as Main or Kelvin Emitter
50/60 Hz IISOL 1 mA
t = 1 min t=1s
2500 3000
Mounting torque Ter... |
| Description |
HiPerFAST IGBT
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| File Size |
97.43K /
4 Page |
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it Online |
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IXYS
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| Part No. |
IXFE180N10
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| OCR Text |
...W C C C C V~ V~
*Conforms to sot-227b outline *Encapsulating epoxy meets *Low RDS (on) HDMOSTM process *Rugged polysilicon gate cell structure *Unclamped Inductive Switching (UIS)
rated *Low package inductance UL 94 V-0, flammability cl... |
| Description |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFET-TM Power MOSFET
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| File Size |
70.21K /
2 Page |
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it Online |
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http://
IXYS[IXYS Corporation]
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| Part No. |
IXFE36N100 IXFE34N100
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| OCR Text |
...W C C C C V~ V~
*Conforms to sot-227b outline *Low RDS (on) HDMOSTM process *Rugged polysilicon gate cell structure *Unclamped Inductive Switching (UIS)
rated *Low package inductance
*Fast intrinsic Rectifier
Applications * DC-DC co... |
| Description |
HiPerFET-TM Power MOSFET
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| File Size |
423.71K /
2 Page |
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it Online |
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IXYS, Corp.
IXYS[IXYS Corporation]
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| Part No. |
IXFE48N50QD3 IXFE44N50QD2 IXFE44N50QD3 IXFE48N50QD2 IXFE-44N50QD2 IXFE-44N50QD3 IXFE-48N50QD2 IXFE-48N50QD3
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| OCR Text |
...ircuit topologies * Conforms to sot-227b outline * Isolation voltage 3000 V~ * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Low drain-to-case capacitance (<60 pF) - reduced RFI * Ultra-fast FRED diode with soft re... |
| Description |
Buck & Boost Configurations for PFC & Motor Control Circuits 39 A, 500 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET
Buck & Boost Configurations for PFC & Motor Control Circuits
Discrete MOSFETs: HiPerFET Power MOSFETS
MOSFET Modules
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| File Size |
537.03K /
2 Page |
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it Online |
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IXYS[IXYS Corporation]
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| Part No. |
IXFN64N50P 64N50P
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| OCR Text |
...Source D = Drain S
miniBLOC, SOT-227 B (IXFN) E153432
S G
Either Source terminal S can be used as the Source terminal or the Kelvin S...227B
1.13/10 Nm/lb.in. 2500 V~ 3000 V~ 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Characteristic Valu... |
| Description |
Search --To IXFN64N50P
PolarHVTM HiPerFETPower MOSFET
From old datasheet system
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| File Size |
53.43K /
2 Page |
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it Online |
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Price and Availability
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