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  tmos e-fet power field effect Datasheet PDF File

For tmos e-fet power field effect Found Datasheets File :: 150+       Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    MTB15N06V MTB15N06V_D ON2395 MTB15N06V-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTB15N06V MTB15N06V_D ON2395 MTB15N06V-D
Description tmos V power field effect Transistor D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
tmos power FET 15 AMPERES 60 VOLTS
From old datasheet system

File Size 274.35K  /  10 Page

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    MTB50N06V_D MTB50N06V ON2433 MTB50N06V-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTB50N06V_D MTB50N06V ON2433 MTB50N06V-D
Description tmos V power field effect Transistor D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
tmos power FET 42 AMPERES 60 VOLTS
From old datasheet system

File Size 289.33K  /  10 Page

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    MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100E-D

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
Part No. MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100E-D
Description tmos power FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM tmos14安培,功率场效应晶体000伏特的RDS(on)\u003d 0.80欧姆
tmos power FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM 14 A, 1000 V, 0.8 ohm, N-CHANNEL, Si, power, MOSFET, TO-264AA
From old datasheet system
tmos e-fet power field effect Transistor N-Channel Enhancement Mode Silicon Gate

File Size 232.49K  /  8 Page

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    MMDF2C03HD ON2158 MMDF2C03HD-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MMDF2C03HD ON2158 MMDF2C03HD-D
Description Complementary tmos field effect Transistors
COMPLEMENTARY DUAL tmos power FET 2.0 AMPERES 30 VOLTS
From old datasheet system

File Size 380.88K  /  12 Page

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    MTP3N100E MTP3N100E_D ON2598 3N100E MTP3N100E-D

MOTOROLA[Motorola, Inc]
Motorola, Inc.
ON SEMICONDUCTOR
Part No. MTP3N100E MTP3N100E_D ON2598 3N100E MTP3N100E-D
Description tmos e-fet power field effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
tmos power FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM
3 A, 1000 V, 4 ohm, N-CHANNEL, Si, power, MOSFET, TO-220AB

File Size 206.08K  /  8 Page

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    MTV16N50E MTV16N50E_D ON2670 MTV16N50E-D TV16N50E

ETC
Motorola, Inc
ON Semiconductor
Part No. MTV16N50E MTV16N50E_D ON2670 MTV16N50E-D TV16N50E
Description 16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, power, MOSFET
From old datasheet system
tmos power FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM
tmos e-fet power field effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate

File Size 275.97K  /  10 Page

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    MTP4N40E MTP4N40E-D

Motorola Mobility Holdings, Inc.
Motorola, Inc
ON Semiconductor
Part No. MTP4N40E MTP4N40E-D
Description tmos power FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHM 4 A, 400 V, 1.8 ohm, N-CHANNEL, Si, power, MOSFET, TO-220AB
tmos e-fet power field effect Transistor N-Channel Enhancement-Mode Silicon Gate

File Size 239.59K  /  8 Page

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    MTP9N25E MTP9N25 MTP9N25E-D

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
Part No. MTP9N25E MTP9N25 MTP9N25E-D
Description tmos power FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM 9 A, 250 V, 0.45 ohm, N-CHANNEL, Si, power, MOSFET, TO-220AB
tmos e-fet power field effect Transistor N-Channel Enhancement-Mode Silicon Gate

File Size 206.06K  /  8 Page

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    MTD20N06V MTD20N06 MTD20N06V_D ON2486 MTD20N06V-D

Motorola Mobility Holdings, Inc.
Motorola, Inc
ON Semiconductor
Part No. MTD20N06V MTD20N06 MTD20N06V_D ON2486 MTD20N06V-D
Description tmos power FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM tmos是功率场效应晶体00安培RDS(on)\u003d 0.080欧姆
From old datasheet system
tmos V power field effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate

File Size 256.98K  /  10 Page

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    MTW8N50E

MOTOROLA INC
Motorola, Inc
Part No. MTW8N50E
Description tmos E FET power field effect TRANSISTOR

File Size 70.29K  /  2 Page

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For tmos e-fet power field effect Found Datasheets File :: 150+       Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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