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  tmos icepak power module Datasheet PDF File

For tmos icepak power module Found Datasheets File :: 150+       Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    IRF540_D ON0285 IRF540/D IRF540-D IRF540

Motorola, Inc.
ON Semiconductor
Part No. IRF540_D ON0285 IRF540/D IRF540-D IRF540
Description 27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, power, MOSFET, TO-220AB
100V7A tmos power Field Effect Transistor (N-Channel Enhancement Mode Silicon Gate100V7A tmos功率场效应管(N沟道增强型硅门))
From old datasheet system
tmos power FET 27 AMPERES
tmos E-FET power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate

File Size 139.23K  /  6 Page

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    MTD10N10EL MTD10N10ELT4 MTD10N10ELT4G

ONSEMI[ON Semiconductor]
Part No. MTD10N10EL MTD10N10ELT4 MTD10N10ELT4G
Description tmos power FET
tmos E-FET power Field Effect Transistor DPAK for Surface Mount

File Size 93.40K  /  8 Page

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    MTD5N25E MTD5N25E_D ON2508 MTD5N25E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTD5N25E MTD5N25E_D ON2508 MTD5N25E-D
Description tmos E-FET power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
tmos power FET 5.0 AMPERES 250 VOLTS RDS(on) = 1.0 OHM
From old datasheet system

File Size 252.63K  /  10 Page

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    MTV6N100E MTV6N100E_D ON2675 MTV6N100E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTV6N100E MTV6N100E_D ON2675 MTV6N100E-D
Description tmos E-FET power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
tmos power FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM
From old datasheet system

File Size 262.08K  /  10 Page

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    MTD1N60E MTD1N60E_D ON2473 MTD1N60E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTD1N60E MTD1N60E_D ON2473 MTD1N60E-D
Description tmos E-FET power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
tmos power FET 1.0 AMPERE 600 VOLTS RDS(on) = 8.0 OHM
From old datasheet system

File Size 266.21K  /  10 Page

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    MTB10N40E MTB10N40E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTB10N40E MTB10N40E-D
Description tmos E-FET High Energy power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
tmos power FET 10 AMPERES

File Size 272.75K  /  10 Page

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    MTB9N25E MTB9N25E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTB9N25E MTB9N25E-D
Description tmos E-FET High Energy power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
tmos power FET 9.0 AMPERES 250 VOLTS

File Size 258.36K  /  10 Page

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    MTB2N40E MTB2N40E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTB2N40E MTB2N40E-D
Description tmos E-FET High Energy power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
tmos power FET 2.0 AMPERES 400 VOLTS

File Size 270.98K  /  10 Page

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    MTP10N40 MTP10N40E ON2540 MTP10N40E-D

ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
Part No. MTP10N40 MTP10N40E ON2540 MTP10N40E-D
Description tmos E-FET High Energy power FET N-Channel Enhancement-Mode Silicon Gate
tmos power FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS
From old datasheet system

File Size 249.12K  /  8 Page

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    MTP3N60E_D ON2606 ON2605 MTP3N60E MTP3N60E-D

ON Semiconductor
Motorola, Inc.
Part No. MTP3N60E_D ON2606 ON2605 MTP3N60E MTP3N60E-D
Description tmos E-FET High Energy power FET N-Channel Enhancement-Mode Silicon Gate
tmos power FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS
From old datasheet system

File Size 180.78K  /  8 Page

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For tmos icepak power module Found Datasheets File :: 150+       Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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