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  transistor igbt n-chan 500v vb Datasheet PDF File

For transistor igbt n-chan 500v vb Found Datasheets File :: 150+       Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    IRG4BC20MDS IRG4BC20MD-S IRG4BC20MD-STRR IRG4BC20MD-STRL

IRF[International Rectifier]
Part No. IRG4BC20MDS IRG4BC20MD-S IRG4BC20MD-STRR IRG4BC20MD-STRL
Description 600V Fast 1-8 kHz Copack igbt in a D2-Pak package
INSULATED GATE BIPOLAR transistor WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A)
transistor | igbt | n-chan | 600V V(BR)CES | 11A I(C) | TO-263AB

File Size 199.42K  /  11 Page

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    International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRG4RC10KD IRG4RC10 IRG4RC10KDTRR
Description transistor | igbt | n-chan | 600V V(BR)CES | 5A I(C) | TO-252AA 晶体管| igbt的|正陈| 600V的五(巴西)国际消费电子展| 5A条一(c)|52AA
INSULATED GATE BIPOLAR transistor WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A)
600V UltraFast 8-25 kHz Copack igbt in a D-Pak package

File Size 188.18K  /  10 Page

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    Belden, Inc.
Part No. IRGC100B120UB
Description transistor | igbt | n-chan | 1.2KV V(BR)CES | CHIP 晶体管| igbt的|正陈| 1.2KV五(巴西)国际消费电子展|芯片

File Size 15.03K  /  1 Page

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    HGT1S3N60B3S HGT1S3N60B3S9A

Fairchild Semiconductor
Part No. HGT1S3N60B3S HGT1S3N60B3S9A
Description transistor | igbt | n-chan | 600V V(BR)CES | 3.5A I(C) | TO-263AB
TRANS igbt CHIP N-CH 600V 7A 3TO-263AB RAIL

File Size 203.93K  /  7 Page

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Part No. OMD38L60ML OMD75N06ML
Description transistor | igbt | n-chan | 600V V(BR)CES | 76A I(C) | M:ML111MW084
30V n-channel PowerTrench MOSFET

File Size 254.01K  /  4 Page

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    Jiangsu Changjiang Electronics Technology Co., Ltd.
Part No. F8A10G
Description transistor | igbt | n-chan | 1KV V(BR)CES | 8A I(C) | TO-247 晶体管| igbt的|正陈| 1KV交五(巴西)国际消费电子展| 8A条一(c)|47

File Size 25.77K  /  1 Page

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    Motorola, Inc.
Motorola Inc
Motorola Mobility Holdings, Inc.
Part No. MC68HCL05C8 MC68HSC05C8 68HC705C8 MC68HC05C8 MC68HCL05C4 MC68HSC05C4 MC68HC805C4 MC68HC705C8 MOTOROLAINC.-MC68HCL05C8
Description transistor,igbt,n-chan,1.2kV V(BR)CES,25A I(C),TO-264AA
igbt; Continuous Collector Current, Ic:60A; Collector Emitter Saturation Voltage, Vce(sat):24V; Power Dissipation, Pd:200W; Collector Emitter Voltage, Vceo:900V; transistor Polarity:N Channel
PROGRAMMING REFRERENCE GUIDE 编程REFRERENCE指南

File Size 3,416.45K  /  64 Page

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    Mitsubishi Electric, Corp.
Part No. CT20ASJ8
Description transistor | igbt | n-chan | 400V V(BR)CES | 130A I(C) | TO-252 晶体管| igbt的|正陈| 400V五(巴西)国际消费电子展| 130A条一(c)|52

File Size 75.53K  /  2 Page

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    Vishay Intertechnology, Inc.
Part No. F300R06KF
Description transistor | igbt | n-chan | 1.2KV V(BR)CES | 300A I(C) | MODULE-S 晶体管| igbt的|正陈| 1.2KV五(巴西)国际消费电子展| 300一(c)|模块

File Size 355.65K  /  5 Page

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    Mitsubishi Electric, Corp.
Part No. CT20AS8
Description transistor | igbt | n-chan | 450V V(BR)CES | 130A I(C) | TO-252 晶体管| igbt的|正陈| 450V五(巴西)国际消费电子展| 130A条一(c)|52

File Size 75.35K  /  2 Page

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For transistor igbt n-chan 500v vb Found Datasheets File :: 150+       Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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