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Korea Electronics (KEC)
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| Part No. |
KTX421U
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| OCR Text |
... source 3. q drain5. q gate 6. q collector 12 2. q base 11 2 2 2008. 9. 23 1/6 semiconductor technical data ktx421u revision no : 1 q 1 maximum rating (ta=25 ) 12 3 6 54 q1 q2 characteristic symbol rating unit collector-... |
| Description |
General Purpose Transistor
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| File Size |
62.45K /
6 Page |
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Nexperia
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| Part No. |
BUK7M9R9-60E
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| OCR Text |
... c rating ? true standard level gate with v gs(th) rating of greater than 1 v at 175 c 3. applications ? 12 v automotive systems ? motors, lamps and solenoid control ? transmission control ? ultra high performance power switching 4. quick ... |
| Description |
N-channel 60 V, 9.9 mΩ standard level MOSFET in LFPAK33
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| File Size |
322.19K /
13 Page |
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it Online |
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Wolfspeed
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| Part No. |
PXAC201202FC-V2
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| OCR Text |
...s = 0 v i dss ? ? 10.0 a gate leakage current v gs = 10 v, v ds = 0 v i gss ? ? 1.0 a on-state resistance (main) v gs = 10 v, v ds = 0.1 v r ds(on) ? 0.3 ? w (peak) v gs = 10 v, v ds = 0.1 v r ds(on) ? ... |
| Description |
High Power RF LDMOS FET 120W, 28V, 1800 - 2200 MHz
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| File Size |
331.96K /
10 Page |
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it Online |
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Wolfspeed
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| Part No. |
PXAC182908FV-V1
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| OCR Text |
...s(on) ? 0.06 ? w operating gate voltage (main) v ds = 28 v, i dq = 600 ma v gs 2.45 2.70 2.95 v (peak) v ds = 28 v, i dq = 0 a v gs 0.45 0.60 0.80 v gate leakage current v gs = 10 v, v ds = 0 v i gss ? ? 1 a... |
| Description |
High Power RF LDMOS FET 240W, 28V, 1805 - 1880 MHz
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| File Size |
351.63K /
9 Page |
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it Online |
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Wolfspeed
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| Part No. |
PXAC182002FC-V1
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| OCR Text |
...(on) ? 0.135 ? w operating gate voltage (main) v ds = 28 v, i dq = 400 ma v gs 2.55 2.65 2.75 v (peak) v ds = 28 v, i dq = 0 a v gs 0.9 1.2 1.3 v gate leakage current v gs = 10 v, v ds = 0 v i gss ? ? 0.1 a ... |
| Description |
High Power RF LDMOS FET 180W, 28V, 1805 - 1880 MHz
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| File Size |
307.24K /
8 Page |
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it Online |
Download Datasheet |
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Diodes
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| Part No. |
DMP3018SFK
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| OCR Text |
...on advanced information d s g gate protection diode p7 ym 7p ym p-channel enhancement mode mosfet product summary v (br)dss r ds(on)max i d t a = +25c -30v 14.5m ? @ v gs = -10v -10.2a 25.5m ? @ v gs = -4.5v -7.7a ... |
| Description |
P-CHANNEL ENHANCEMENT MODE MOSFET
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| File Size |
331.33K /
6 Page |
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Nexperia
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| Part No. |
BUK9M6R7-40H
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| OCR Text |
... m dynamic characteristics q gd gate-drain charge i d = 20 a; v ds = 20 v; v gs = 4.5 v; fig. 13 ; fig. 14 - 2.5 5 nc source-drain diode q r recovered charge i s = 20 a; di s /dt = -100 a/s; v gs = 0 v; v ds = 20 v; t j = 25 c - 16 ... |
| Description |
N-channel 40 V, 6.7 mlogic level MOSFET in LFPAK33
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| File Size |
267.77K /
11 Page |
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it Online |
Download Datasheet |
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Price and Availability
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