0.580 pdf Datasheet P4 Full Text Search --- IC-ON-LINE

0.580 Datasheet PDF File

For 0.580 Found Datasheets File :: 9594 Search Time::2.031ms
Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				NEC[NEC]
Part No.	UPD16682 UPD16682N UPD16682P UPD16682W
OCR Text	... Chip Standard TCP (output OLB: 0.15-mm pitch), for evaluation Note Note -051 Note The following four temperature gradients can ...580 -520 -460 -400 -340 -280 -220 -160 -100 -40 20 80 140 200 260 320 380 440 500 560 620 680 740 80...
Description	1/65 DUTY LCD CONTROLLER/DRIVER WITH ON-CHIP RAM
File Size	414.24K / 56 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ411 D11219EJ1V0DS00
OCR Text	... PACKAGE DIMENSIONS (in mm) 7.0 MAX. 1.2 2.0 0.8 0.1 3.0 MAX. FEATURES * Radial taping supported * Can be directly driven by ...580 280 10 110 195 185 29.8 2.7 11.5 1.0 140 160 0.24 0.11 -1.4 MIN. TYP. MAX. -10 10 -2.0 UNIT A...
Description	P-CHANNEL SIGNAL MOS FET FOR SWITCHING From old datasheet system
File Size	67.31K / 6 Page	View it Online	Download Datasheet

				SANKEN[Sanken electric]
Part No.	2SJ425
OCR Text	...RDS (on) Ciss Coss t on toff -2.0 1.8 2.8 0.2 580 360 90 45 0.28 min -60 500 Ratings typ max Unit V nA A V S pF pF ns ns (Ta = 25C) Unit V V A A W C C Conditions I D = -250A, VGS = 0V VGS = in 20V 32 (Tch 30 (Tc = 25C) 1...
Description	MOSFET
File Size	33.23K / 1 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ495 2SJ295 D11267EJ2V0DS00
OCR Text	...DIMENSIONS (in millimeter) 10.0 0.3 3.2 0.2 4.5 0.2 2.7 0.2 FEATURES * Super Low On-State Resistance 3 0.1 4 0.2 RDS(on)2 = ...580 40 220 600 380 140 12 46 0.8 160 400 1.5 -1.0 12 MIN. TYP. 24 38 -1.5 24 -10 m10 MAX. 30 56 -2.0...
Description	From old datasheet system MOS Field Effect Power Transistors SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
File Size	72.23K / 8 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ526
OCR Text	... * Low on-resistance R DS(on) = 0.11 typ. * Low drive current * 4 V gete drive devices * High speed switching Outline TO-220FM D ...580 300 85 10 55 85 60 -1.2 60 Max -- -- -10 10 -2.0 0.15 0.23 -- -- -- -- -- -- -- -- -- -- Unit V ...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	50.48K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ529 2SJ529L 2SJ529S
OCR Text	... * Low on-resistance R DS(on) = 0.12 typ. * 4 V gete drive devices * High speed switching Outline DPAK-2 4 D 4 12 G 3 12...580 300 85 10 40 85 60 -1.2 60 Max -- -- -10 10 -2.0 0.16 0.24 -- -- -- -- -- -- -- -- -- -- Unit V ...
Description	Power switching MOSFET Silicon P Channel MOS FET High Speed Power Switching
File Size	51.89K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ540
OCR Text	... * Low on-resistance R DS(on) = 0.11 typ. * Low drive current * 4 V gete drive devices * High speed switching Outline TO-220AB D ...580 300 85 10 55 85 60 -1.2 60 Max -- -- -10 10 -2.0 0.15 0.23 -- -- -- -- -- -- -- -- -- -- Unit V ...
Description	Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
File Size	52.52K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ545
OCR Text	... * Low on-resistance R DS(on) = 0.11 typ. * Low drive current * 4 V gete drive devices * High speed switching Outline TO-220CFM D ...580 300 85 10 55 85 60 -1.2 60 Max -- -- -10 10 -2.0 0.15 0.23 -- -- -- -- -- -- -- -- -- -- Unit V ...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	50.81K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor] Hitachi,Ltd.
Part No.	2SJ549 2SJ549L 2SJ549S
OCR Text	... * Low on-resistance R DS(on) = 0.11 typ. * Low drive current * 4 V gete drive devices * High speed switching Outline LDPAK 4 4 D 1...580 300 85 10 55 85 60 -1.2 60 Max -- -- -10 10 -2.0 0.15 0.23 -- -- -- -- -- -- -- -- -- -- Unit V ...
Description	Power switching MOSFET Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开
File Size	54.89K / 9 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT12045L2VR
OCR Text	0.450W POWER MOS V (R) Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology ...580 48 18 15 76 16 nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time ...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	58.91K / 2 Page	View it Online	Download Datasheet

For 0.580 Found Datasheets File :: 9594 Search Time::2.031ms
Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |