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ST Microelectronics
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Part No. |
STD4NA40-1
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OCR Text |
1.7 w n avalanche rugged technology n 100% avalanche tested n repetitive avalanche data at 100 o c n application oriented characterization...turn-on time rise time v dd = 200 v i d = 2 a r g = 18 w v gs = 10 v (see test circui... |
Description |
N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
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File Size |
361.89K /
10 Page |
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it Online |
Download Datasheet
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ST Microelectronics
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Part No. |
STD4N25-1
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OCR Text |
...power package in tube (suffix "-1") n surface-mounting dpak (to-252) power package in tape & reel (suffix "t4") applications ...turn-on time rise time v dd = 125 v i d = 2 a r g = 50 w v gs = 10 v (see test circui... |
Description |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
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File Size |
355.35K /
10 Page |
View
it Online |
Download Datasheet
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ST Microelectronics
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Part No. |
STD3N30L-1
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OCR Text |
1.15 w n avalanche rugged technology n 100% avalanche tested n repetitive avalanche data at 100 o c n application oriented characterizatio...turn-on time rise time v dd = 150 v i d = 1.5 a r g = 50 w v gs = 5 v (see test circu... |
Description |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
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File Size |
352.59K /
10 Page |
View
it Online |
Download Datasheet
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![](images/bg04.gif) |
ST Microelectronics
|
Part No. |
STD3N30-1
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OCR Text |
1.1 w n avalanche rugged technology n 100% avalanche tested n repetitive avalanche data at 100 o c n application oriented characterization...turn-on time rise time v dd = 150 v i d = 1.5 a r g = 50 w v gs = 10 v (see test circ... |
Description |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
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File Size |
361.88K /
10 Page |
View
it Online |
Download Datasheet
|
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Price and Availability
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