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TRIQUINT[TriQuint Semiconductor]
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| Part No. |
TQPHT
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| OCR Text |
1 Dielectric
MIM Metal
Metal 2 - 4um Dielectric Metal 1 - 2um
* * * * *
Metal 1
NiCr Isolation Implant Isolation Implant
Nitride N+ Pseudomorphic Channel
Metal 0
pHEMT
MIM Capacitor Semi-Insulating GaAs Substrate
... |
| Description |
0.5 um pHEMT Foundry Service
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| File Size |
204.87K /
5 Page |
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LITE-ON SEMICONDUCTOR CORP
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| Part No. |
LT4420C
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| OCR Text |
... (diode conduction) i s 2.7 1.36 a t a =25 3 1.5 maximum power dissipation t a =70 p d 1.9 0.95 w operating junction tem...2um. 2. mold flash, protrusions or gate burrs shall not exceed 0.15 mm in total (both sides).
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| Description |
9.5 A, 30 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
577.84K /
6 Page |
View
it Online |
Download Datasheet |
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TRIQUINT[TriQuint Semiconductor]
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| Part No. |
TQPED
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| OCR Text |
...
* * * * *
Dielectric Metal 1 - 2um
Metal 1
Metal 1 Dielectric
MIM Metal
NiCr
Nitride N+ Pseudomorphic Channel
Metal 0
Isolation Implant Isolation Implant MIM Capacitor NiCr Resistor
E-Mode / D-Mode
pHEMT
Sem... |
| Description |
Precision, 100UA Gain Selectable Amplifier
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| File Size |
96.58K /
3 Page |
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it Online |
Download Datasheet |
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LITE-ON SEMICONDUCTOR CORP
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| Part No. |
LT9435AC
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| OCR Text |
1, nov . 2 010 parameter symbol 10 secs steady state ...2um. 2. mold flash, protrusions or gate burrs shall not exceed 0.15 mm in total (both sides). sop... |
| Description |
5.3 A, 30 V, 0.04 ohm, P-CHANNEL, Si, POWER, MOSFET
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| File Size |
548.37K /
6 Page |
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it Online |
Download Datasheet |
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LITE-ON SEMICONDUCTOR CORP
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| Part No. |
LT4953C
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| OCR Text |
1 . nov . 20 10 lt4953c parameter symbol limit un...2um. 2. mold flash, protrusions or gate burrs shall not exceed 0.15 mm in total (both sides).
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| Description |
5.3 A, 30 V, 0.06 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
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| File Size |
580.78K /
6 Page |
View
it Online |
Download Datasheet |
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For
1.2um Found Datasheets File :: 40 Search Time::1.937ms
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