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Infineon Technologies
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| Part No. |
H30T90
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| OCR Text |
...oltage v f v ge =0v, i f =10a t j =25 c t j =150 c t j =175 c - - - 1.1 1.0 1.0 1.3 - - gate-emitter threshold...600v, i c =30a, v ge =0/15v, r g =15 , - 1.8 - mj switching characteristic, inductive load,... |
| Description |
IGBT
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| File Size |
285.54K /
12 Page |
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it Online |
Download Datasheet
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Infineon Technologies
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| Part No. |
H30T100
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| OCR Text |
...oltage v f v ge =0v, i f =10a t j =25 c t j =150 c t j =175 c - - - 1.1 1.0 1.0 1.3 - - gate-emitter threshold...600v, i c =30a, v ge =0/15v, r g =15 , energy losses include ?tail? and diode reverse recovery.... |
| Description |
IGBT
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| File Size |
335.78K /
12 Page |
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it Online |
Download Datasheet |
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Micross Components
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| Part No. |
ICE10N60FP
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| OCR Text |
...s 50 v/ns v ds = 480v, i d = 10a, t j = 125c v gs gate source voltage 20 v static 30 ac (f>hz) p tot power dissipation 35 w t c = 25c...600v min r ds(on) v gs = 10v 0.28? typ q g v ds = 480v 41nc typ micross components ltd, united kin... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
749.16K /
4 Page |
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it Online |
Download Datasheet |
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Micross Components
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| Part No. |
ICE20N170
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| OCR Text |
...rgy, single pulse 520 mj i d = 10a i ar avalanche current, repetitive 20 a limited by t j max dv/dt mosfet dv/dt ruggedness 50 v/ns v ds ...600v min r ds(on) v gs = 10v 0.17? typ q g v ds = 480v 62nc typ micross components ltd, united kin... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
753.80K /
4 Page |
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it Online |
Download Datasheet |
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Micross Components
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| Part No. |
ICE20N170U
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| OCR Text |
...rgy, single pulse 520 mj i d = 10a i ar avalanche current, repetitive 20 a limited by t j max dv/dt mosfet dv/dt ruggedness 50 v/ns v ds ...600v min r ds(on) v gs = 10v 0.17? typ q g v ds = 480v 62nc typ micross components ltd, united kin... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
755.00K /
4 Page |
View
it Online |
Download Datasheet |
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Micross Components
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| Part No. |
ICE20N170FP
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| OCR Text |
...rgy, single pulse 520 mj i d = 10a i ar avalanche current, repetitive 20 a limited by t j max dv/dt mosfet dv/dt ruggedness 50 v/ns v ds ...600v min r ds(on) v gs = 10v 0.17? typ q g v ds = 480v 62nc typ micross components ltd, united kin... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
1,005.27K /
4 Page |
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it Online |
Download Datasheet |
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| Part No. |
IRGB10B60KD
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| OCR Text |
...on voltage 1.5 1.80 2.20 i c = 10a, v ge = 15v ??? 2.20 2.50 v i c = 10a, v ge = 15v t j = 150c v ge(th) gate threshold voltage 3...600v ??? 300 700 v ge = 0v, v ce = 600v, t j = 150c v fm diode forward voltage drop ??? 1.30 1.45... |
| Description |
22 A, 600 V, N-CHANNEL IGBT, TO-220AB
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| File Size |
328.45K /
16 Page |
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it Online |
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| Part No. |
IRGB10B60KDPBF
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| OCR Text |
...on voltage 1.5 1.80 2.20 i c = 10a, v ge = 15v ??? 2.20 2.50 v i c = 10a, v ge = 15v t j = 150c v ge(th) gate threshold voltage 3...600v ??? 300 700 v ge = 0v, v ce = 600v, t j = 150c v fm diode forward voltage drop ??? 1.30 1.45... |
| Description |
22 A, 600 V, N-CHANNEL IGBT, TO-220AB
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| File Size |
370.24K /
16 Page |
View
it Online |
Download Datasheet |
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