Description |
2 Mega0000'>bit (20000'>56 K 0000'>x 0000'>8-0000'>bit/120000'>8 K 0000'>x 16-0000'>bit) 0000'>cmos 3.0 volt-only, Boot Sector Flash Memory, Die Revison 1 0000'>120000'>8k 0000'>x 16 FLASH 3V PROM, 70 ns, UUC43 2 Mega0000'>bit (20000'>56 K 0000'>x 0000'>8-0000'>bit/120000'>8 K 0000'>x 16-0000'>bit) 0000'>cmos 3.0 volt-only, Boot Sector Flash Memory, Die Revison 1 0000'>120000'>8k 0000'>x 16 FLASH 3V PROM, 90 ns, UUC43 2 Mega0000'>bit (20000'>56 K 0000'>x 0000'>8-0000'>bit/120000'>8 K 0000'>x 16-0000'>bit) 0000'>cmos 3.0 volt-only, Boot Sector Flash Memory, Die Revison 1 0000'>120000'>8k 0000'>x 16 FLASH 3V PROM, 60 ns, UUC43 2 Mega0000'>bit (20000'>56 K 0000'>x 0000'>8-0000'>bit/120000'>8 K 0000'>x 16-0000'>bit) 0000'>cmos 3.0 volt-only, Boot Sector Flash Memory, Die Revison 1 2兆位0000'>56亩0000'>x 0000'>8-0000'>bit/120000'>8亩0000'>x 16位).0伏的0000'>cmos只,引导扇区快闪记忆体,修编模具1 2 Mega0000'>bit (20000'>56 K 0000'>x 0000'>8-0000'>bit/120000'>8 K 0000'>x 16-0000'>bit) 0000'>cmos 3.0 volt-only, Boot Sector Flash Memory, Die Revison 1 2兆位0000'>560000'>x 0000'>8-0000'>bit/120000'>80000'>x 16位).0伏的0000'>cmos只,引导扇区快闪记忆体,修编模具1 2 Mega0000'>bit (20000'>56 K 0000'>x 0000'>8-0000'>bit/120000'>8 K 0000'>x 16-0000'>bit) 0000'>cmos 3.0 volt-only, Boot Sector Flash Memory, Die Revison 1 0000'>120000'>8k 0000'>x 16 FLASH 3V PROM, 120 ns, UUC43 2 Mega0000'>bit (20000'>56 K 0000'>x 0000'>8-0000'>bit/120000'>8 K 0000'>x 16-0000'>bit) 0000'>cmos 3.0 volt-only, Boot Sector Flash Memory, Die Revison 1 2兆位20000'>56亩0000'>x 0000'>8-0000'>bit/120000'>8亩0000'>x 16位).0伏的0000'>cmos只,引导扇区快闪记忆体,修编模具1 2 Mega0000'>bit (20000'>56 K 0000'>x 0000'>8-0000'>bit/120000'>8 K 0000'>x 16-0000'>bit) 0000'>cmos 3.0 volt-only, Boot Sector Flash Memory, Die Revison 1 2兆位0000'>56亩0000'>x 0000'>8-0000'>bit/120000'>8亩0000'>x 16位)3.0伏的0000'>cmos只,引导扇区快闪记忆体,修编模具1
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