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  180.0v. Datasheet PDF File

For 180.0v. Found Datasheets File :: 828    Search Time::5.031ms    
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    DIM200PLM33-F00011

Dynex Semiconductor
Part No. DIM200PLM33-F00011
OCR Text ... 200a v ge = 15v v ce = 1800v c ge = 56nf l s ~ 100nh r g(on) = 16.5 ? r g(off) = 16.5 ? 1.95 s t f fall time 170 ns e off turn - off energy loss 220 mj t d(on) turn - on delay time...
Description IGBT Chopper Module

File Size 309.86K  /  8 Page

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    FZ1200R33KF2-B5

eupec GmbH
Part No. FZ1200R33KF2-B5
OCR Text ...uctive load) IC = 1200 A, VCE = 1800V VGE = 15V, RG = 2,7 , CGE = 220nF, T vj = 25C VGE = 15V, RG = 2,7 , CGE = 220nF, T vj = 125C Anstiegszeit (induktive Last) rise time (inductive load) IC = 1200 A, VCE = 1800V VGE = 15V, RG = 2,7 , CGE =...
Description Hochstzulassige Werte / Maximum rated values

File Size 145.89K  /  8 Page

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    FZ1200R33KL2

eupec GmbH
Part No. FZ1200R33KL2
OCR Text ... VGE = -15V ... + 15V, VCE = 1800V QG - 22 - C VCE = 3300V, VGE = 0V, Tvj = 25C ICES - - 5 mA VCE = 0V, VGE = 20V, Tvj = 25C IGES - - 400 nA prepared by: J. Biermann approved by: Chri...
Description Hochstzulassige Werte / Maximum rated values

File Size 162.05K  /  9 Page

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    DIM200PKM33-F00011 DIM200PKM33-F000-15

Dynex Semiconductor
Part No. DIM200PKM33-F00011 DIM200PKM33-F000-15
OCR Text ... 200a v ge = 15v v ce = 1800v c ge = 56nf l s ~ 100nh r g(on) = 16.5 ? r g(off) = 16.5 ? 1.95 s t f fall time 170 ns e off turn - off energy loss 220 mj t d(on) turn - on delay time...
Description IGBT Chopper Module

File Size 309.68K  /  8 Page

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    DIM100PHM33-F000 DIM100PHM33-F000-15

Dynex Semiconductor
Part No. DIM100PHM33-F000 DIM100PHM33-F000-15
OCR Text ... 100a v ge = 15v v ce = 1800v c ge = 33nf l s ~ 100nh r g(on) = 33 ? r g(off) = 33 ? 1.95 s t f fall time 170 ns e off turn - off energy loss 110 mj t d(on) turn - on delay time ...
Description Half Bridge IGBT Module

File Size 310.85K  /  8 Page

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    2SC4636LS

Sanyo Semicon Device
Part No. 2SC4636LS
OCR Text 1800V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications Features * * * * Package Dimensions unit : mm 2079D [2SC4636LS] 10.0 3.2 4.5 2.8 High breakdown voltage(VCEO min=1800V). Small Cob(typical Cob=1.4pF). Full-...
Description NPN Triple Diffused Planar Silicon Transistor 1800V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications
1800V/10mA High-Voltage Amplifier,High-Voltage Switching Applications

File Size 30.51K  /  3 Page

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    DIM200PHM33-F00011

Dynex Semiconductor
Part No. DIM200PHM33-F00011
OCR Text ... 200a v ge = 15v v ce = 1800v c ge = 56nf l s ~ 100nh r g(on) = 16.5 ? r g(off) = 16.5 ? 1.95 s t f fall time 170 ns e off turn - off energy loss 220 mj t d(on) turn - on delay time...
Description Half Bridge IGBT Module

File Size 310.34K  /  8 Page

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    Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
Part No. DFM400NXM33-A000
OCR Text ... 50Hz IEC1287. V1 = 2400V, V2 = 1800V, 50Hz RMS Test Conditions Max. 3300 400 800 80 1.92 6 10 Units V A A A2s kW kV pC THERMAL AND MECHANICAL RATINGS Internal insulation: Baseplate material: Creepage distance: Clearance: CTI (Critical ...
Description Fast Recovery Diode Module Target Information

File Size 114.99K  /  7 Page

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    DIM1200ESM33-F000 DIM1200ESM33-F000-15

Dynex Semiconductor
Part No. DIM1200ESM33-F000 DIM1200ESM33-F000-15
OCR Text ...1200a v ge = 15v v ce = 1800v c ge = 330nf l s ~ 100nh r g(on) = 2.7 ? r g(off) = 4.7 ? 2150 ns t f fall time 230 ns e off turn - off energy loss 1550 mj t d(on) turn - on delay t...
Description Single Switch IGBT Module

File Size 321.42K  /  8 Page

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    MDQ75 MDQ75-08 MDQ75-12 MDQ75-16 MDQ75-18

Yangzhou yangjie electronic co., ltd
Part No. MDQ75 MDQ75-08 MDQ75-12 MDQ75-16 MDQ75-18
OCR Text ... vrrm 800 to 1800v id 75amp applications single phase rectifiers for power supplies rectifiers for dc motor field supplies battery charger rectifiers input...
Description Single Phase Rectifier Bridge

File Size 59.62K  /  3 Page

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