19ghz pdf Datasheet P4 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : B7714 DB25PAM1 175014 S2415H S0603 MC508 FDR858 8275BR
	Product Description
	Full Text Search

19ghz Datasheet PDF File

For 19ghz Found Datasheets File :: 815 Search Time::6.329ms
Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				NJRC[New Japan Radio]
Part No.	NJG1705V NJG1705V-C1 NJG1705V-C10 NJG1705V-C2 NJG1705V-C3 NJG1705V-C4 NJG1705V-C5 NJG1705V-C6 NJG1705V-C7 NJG1705V-C8 NJG1705V-C9 NJG1705V-L1 NJG1705V-L10 NJG1705V-L2 NJG1705V-L3 NJG1705V-L4 NJG1705V-L5 NJG1705V-L6 NJG1705V-L7 NJG1705V-L8 NJG1705V-L9 NJG1705V-R1
OCR Text	1.5/1.9GHz BAND FRONT-END GaAs MMIC nGENERAL DESCRIPTION NJG1705V is a front-end GaAs MMIC including a LNA, local amplifier and a Mixer, designed mainly for 1.5 and 1.9GHz band cellular phone. NJG1705V exhibits low noise of 16dB at 1.5GHz ...
Description	1.5/1.9GHz BAND FRONT-END GaAs MMIC
File Size	560.84K / 26 Page	View it Online	Download Datasheet

				United Monolithic Semiconductors
Part No.	CHA8100 CHA8100-99F CHA8100-99F00
OCR Text	1/12 specification s subject to change without notice united monolithic semiconductors s.a.s. route dpartementale 128 - b.p.46 - 91401 or...9ghz 9.5ghz 10ghz 10.2ghz 10.5ghz output power @ 25c versus compr...
Description	X-band HBT High Power Amplifier
File Size	246.47K / 12 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	SPM3252
OCR Text	...ut power. 0.4 0.16 0 to 0.1 Application Circuit CTL -- RX 6 4 1.6 2.8 RX ANT TX 0.95 0.95 1.9 2.9 0.8 1.1 0.6 ...9GHz Control voltage +3 / 0V f=1.9GHz Control voltage +3 / 0V f=1.9GHz f=1.9GHz Control voltage +3 /...
Description	GaAs MMIC SPDT Switch
File Size	18.13K / 3 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	SPM3255
OCR Text	... [SPM3255] 0.6 0.4 6 4 0 to 0.1 1.6 2.8 0.95 0.95 1.9 2.9 0.6 1 3 0.16 Specifications Absolute Maximum Ratings at Ta = 25C Parameter ...9GHz f=1.9GHz f=810 to 1033MHz f=1.9GHz f=810 to 1033MHz f=1.9GHz f=810MHz to 1.9GHz f=810MHz to 1.9...
Description	Single Power Supply Operation RF Switch MMIC
File Size	28.82K / 3 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	BFP196W Q62702-F1576
OCR Text	...elecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA * Power amplifier for DECT and PCN systems * fT = 7.5GHz F...9GHz VCE = Parameter 20 dB Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 12 dB 18 ...
Description	From old datasheet system NPN Silicon RF Transistor(For low noise low distortion broadband amplifiers in antenna and telecommunications) NPN Silicon RF Transistor(For low noise, low distortion broadband amplifiers in antenna and telecommunications)
File Size	60.65K / 7 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	BFP196 Q62702-F1320
OCR Text	...elecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA * Power amplifier for DECT and PCN systems * fT = 7.5GHz F...9GHz VCE = Parameter 18 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 10 10V dB 5V 3V...
Description	From old datasheet system NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications)
File Size	61.07K / 7 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	BFR181W Q62702-F1491
OCR Text	...5 mA to 12mA * fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking...9GHz VCE = Parameter 20 dB 18 10V 5V Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 14...
Description	NPN Silicon RF Transistor )For low noise/ high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA) NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA) From old datasheet system
File Size	56.17K / 7 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	BFR181 Q62702-F1314
OCR Text	...5 mA to 12mA * fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking...9GHz VCE = Parameter 20 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 14 dB dB ...
Description	From old datasheet system NPN Silicon RF Transistor (For low noise high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA) NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)
File Size	57.16K / 7 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	BFS480 Q62702-F1531
OCR Text	...0.2mA to 8mA * fT = 7GHz F = 1.5dB at 900MHz * Two (galvanic) internal isolated Transistors in one package ESD: Electrostatic dischar...9GHz VCE = Parameter 22 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 15 dB dB ...
Description	NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems) NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) From old datasheet system
File Size	52.38K / 6 Page	View it Online	Download Datasheet

				AVAGO TECHNOLOGIES LIMITED
Part No.	MGA-25203-BLKG
OCR Text	...ess data applications in the 5.1 to 5.9 ghz frequency ranges. the pa is optimized for ieee 802.11a/n wlan and 802.16 wimax applications. ...9ghz ? operates from 4.9-5.9 ghz ? integrated cmos compatible pins for shutdown ? 3 to 5v sup...
Description	5.1 - 5.9 GHz WiFi and WiMAX Power Amplifi er (3x3mm)
File Size	209.87K / 15 Page	View it Online	Download Datasheet

For 19ghz Found Datasheets File :: 815 Search Time::6.329ms
Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |