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Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
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Part No. |
CY7C1363C-133BZC CY7C1363C-100BZI CY7C1363C-100BGC
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Description |
9-Mbit (256K x 36/512k x 18) flow-through SRAM 512k x 18 CACHE SRAM, 6.5 ns, PBGA165 9-Mbit (256K x 36/512k x 18) flow-through SRAM 512k x 18 CACHE SRAM, 8.5 ns, PBGA165 9-Mbit (256K x 36/512k x 18) flow-through SRAM 512k x 18 CACHE SRAM, 8.5 ns, PBGA119
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File Size |
544.52K /
31 Page |
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Cypress Semiconductor Corp.
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Part No. |
CY7C1371D
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Description |
18-Mbit (512k x 36/1m x 18) flow-through SRAM with NoBL Architecture(18-Mb (512k x 36/1m x 18)流通式SRAM(NoBL结构 18兆位(为512k × 36/1m × 18)流体系结构,通过与总线延迟18 MB的(12k × 36/1m × 18)流通式的SRAM(总线延迟结构)的SRAM
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File Size |
417.22K /
28 Page |
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it Online |
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IDT Integrated Device Technology, Inc.
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Part No. |
IDT71V67903S80BGI IDT71V67903S75BG IDT71V67903S75BQI IDT71V67903S75PF8 IDT71V67903S75PFI IDT71V67903S75PFI8 IDT71V67903S75BG8
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Description |
3.3V 512k x 18 Synchronous 3.3V I/O Flowthrough SRAM 256K x 36, 512k x 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter flow-through Outputs, Single Cycle Deselect 512k x 18 CACHE SRAM, 7.5 ns, PBGA165 256K x 36, 512k x 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter flow-through Outputs, Single Cycle Deselect 512k x 18 CACHE SRAM, 7.5 ns, PBGA119 256K x 36, 512k x 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter flow-through Outputs, Single Cycle Deselect 512k x 18 CACHE SRAM, 8 ns, PBGA119
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File Size |
978.88K /
23 Page |
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it Online |
Download Datasheet
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Price and Availability
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