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  2.51a Datasheet PDF File

For 2.51a Found Datasheets File :: 361    Search Time::1.562ms    
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    IRF1010EZL IRF1010EZLPBF IRF1010EZPBF IRF1010EZS IRF1010EZSPBF IRF1010EZ

IRF[International Rectifier]
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Part No. IRF1010EZL IRF1010EZLPBF IRF1010EZPBF IRF1010EZS IRF1010EZSPBF IRF1010EZ
OCR Text ...in. Typ. Max. Units 60 --- --- 2.0 200 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 0.058 --- 6.8 8....51A VDS = VGS, ID = 250A VDS = 25V, ID = 51A VDS = 60V, VGS = 0V VDS = 60V, VGS = 0V, TJ = 125C VGS ...
Description    AUTOMOTIVE MOSFET

File Size 282.56K  /  12 Page

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    SSRF60N10

SeCoS Halbleitertechnologie GmbH
Part No. SSRF60N10
OCR Text ...0 min k 0.50 0.90 d 4.30 4.70 l 2.34 2.74 e 2.50 3.10 m 2.50 2.90 f 2.40 2.80 n ? ? ? ssrf60n10 n-ch enhancement mode power mosfet 51a, 100v, r ds(on) 78m elektronische bauelemente 14-jul-2010 rev.a page 2 of 4 http://w...
Description N-Ch Enhancement Mode Power MOSFET

File Size 323.86K  /  4 Page

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    HUFA76639P HUFA76639S3S HUFA76639P3

FAIRCHILD[Fairchild Semiconductor]
Part No. HUFA76639P HUFA76639S3S HUFA76639P3
OCR Text ...igure 4 Figures 6, 17, 18 180 1.2 -55 to 175 300 260 W W/oC oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . ...51A, VGS = 10V (Figures 9, 10) ID = 35A, VGS = 5V (Figure 9) ID = 34A, VGS = 4.5V (Figure 9) THERMAL...
Description 50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFETPower MOSFET
50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
50A/ 100V/ 0.027 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET

File Size 216.09K  /  10 Page

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    IXFR102N30P

IXYS Corporation
Part No. IXFR102N30P
OCR Text ... c = 25 c60mj e as t c = 25 c 2.5 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 4 ? p d t c = 25...51a value vs. junction tem perature 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 -50 -25 0 25 50...
Description PolarHT HiPerFET Power MOSFET

File Size 143.90K  /  5 Page

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    HUF76639S3S HUF76639P3 FN4694

INTERSIL[Intersil Corporation]
Part No. HUF76639S3S HUF76639P3 FN4694
OCR Text ...s (TC= 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TC= 100oC, VGS = 5V) . . ....51A, VGS = 10V (Figures 9, 10) ID = 35A, VGS = 5V (Figure 9) ID = 34A, VGS = 4.5V (Figure 9) THERMAL...
Description From old datasheet system
50A 100V 0.027 Ohm N-Channel Logic Level UltraFET Power MOSFET
50A/ 100V/ 0.027 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET
50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

File Size 109.06K  /  9 Page

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    Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
Part No. APTM50DSKM65T3G
OCR Text ...3 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/...51A Inductive switching @ 125C VGS = 15V VBus = 333V ID = 51A R G = 3 Inductive switching @ 25C VGS ...
Description Dual Buck chopper MOSFET Power Module 51 A, 500 V, 0.078 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET

File Size 289.83K  /  6 Page

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    SSD50N06-15D

SeCoS Halbleitertechnologie GmbH
Part No. SSD50N06-15D
OCR Text .... max. min. max. a 6.4 6.8 j 2.30 ref. b 5.20 5.50 k 0.70 0.90 c 2.20 2.40 m 0.50 1.1 d 0.45 0.58 n 0.9 1.6 e 6.8 7.3 o 0 0.15 f ...51a, 60v, r ds(on) 13 m ? elektronische bauelemente 27-sep-2010 rev. b page 2 of 4 http:/...
Description N-Ch Enhancement Mode Power MOSFET

File Size 387.39K  /  4 Page

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    IRHNA7160 IRHNA3160 IRHNA4160 IRHNA8160

IRF[International Rectifier]
Part No. IRHNA7160 IRHNA3160 IRHNA4160 IRHNA8160
OCR Text 2) Product Summary Part Number Radiation Level IRHNA7160 100K Rads (Si) IRHNA3160 300K Rads (Si) IRHNA4160 600K Rads (Si) IRHNA8160 1000K Rads (Si) RDS(on) 0.04 0.04 0.04 0.04 ID 51A 51A 51A 51A IRHNA7160 100V, N-CHANNEL REF: MIL-PRF-...
Description RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)

File Size 106.42K  /  8 Page

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    IRHNB7160 IRHNB8160 IRHNB3160 IRHNB4160

IRF[International Rectifier]
Part No. IRHNB7160 IRHNB8160 IRHNB3160 IRHNB4160
OCR Text ...perature Weight 51 32.5 204 300 2.4 20 500 51 30 7.3 -55 to 150 300 ( for 5 sec) 3.5 (Typical ) Pre-Irradiation Units A W W/C V mJ ...51A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 32.5A VDS= 80V ,VGS=0V VDS = 80V, VGS = 0V, TJ = 125C VG...
Description 100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3)

File Size 99.97K  /  8 Page

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