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  25deg Datasheet PDF File

For 25deg Found Datasheets File :: 369    Search Time::1.125ms    
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    RA30H1317M RA30H1317M-01 RA30H1317M-E01

Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. RA30H1317M RA30H1317M-01 RA30H1317M-E01
OCR Text ...12.5V , VGG=5V ZG=ZL=50ohm, Tc=+25deg.C 60 40 20 0 100 VDD=12.5V, Pin=50mW Po=30W(VGG:adj.) (VGG=5V at Po measure) ZG=ZL=50ohm, Tc=+25deg.C 20 0 180 140 150 160 170 FREQUENCY f(MHz) OUTPUT POWER, EFFICIENCY VS. INPUT POWER 5...
Description 135-175MHz 30W 12.5V MOBILE RADIO

File Size 63.63K  /  9 Page

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    SOSHIN ELECTRIC CO LTD
Part No. SV2.5WL0001
OCR Text ... - m h z / v load=50ohm, +25deg.c+/-5deg.c -3.0 0.0 +3.0 dbm output level load=50ohm, -20deg.c up to +60deg.c -4.0 - +4.0 dbm phase noise offset=10khz, -20deg.c up tp +60deg.c 90 95 - dbc/ hz pushing figure vb=5....
Description VCO, 2460 MHz

File Size 33.02K  /  2 Page

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    Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. MGFC45V3642A C453642A
OCR Text ...25 (ohm) 4 . 1 GF-38 (Ta=25deg.C) Ratings -15 -15 20 -80 168 150 175 -65 / +175 Unit V V A mA mA W deg.C deg.C (1) gate (2) source(flange) (3)drain ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO ID IGR IGF PT *1 Tch Tstg *1 : Tc=25...
Description 3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET 3.6 - 4.2GHz波段32W内部匹配砷化镓场效应
From old datasheet system

File Size 172.84K  /  2 Page

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    RA01L9595M-101

Mitsubishi Electric Semiconductor
Part No. RA01L9595M-101
OCR Text ...595M MAXIMUM RATINGS (Tcase=+25deg.C. unless otherwise specified) SYMBOL PARAMETER VDD VGG Pin Pout Tcase(OP) Tstg Drain Voltage Gate Voltage Input Power Output Power Operation Case Temperature Range Storage Temperature Range f=952-954M...
Description 952-954MHz 1.4W 3.3V, 2 Stage Amp. For RFID READER / WRITER

File Size 442.09K  /  14 Page

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    Peregrine Semiconductor
Part No. PE42552
OCR Text ...requency [ghz] isolation [-db] +25deg c +85deg c -40deg c -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 0123456789 frequency [ghz] isolation [-db] 3.0 v 3.3 v 3.6 v -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 0123456789 frequency [ghz] isolatio...
Description SPDT UltraCMOS RF Switch DC - 7500 MHz

File Size 431.83K  /  9 Page

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    RA02M8087MD-101

Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
http://
Part No. RA02M8087MD-101
OCR Text ...02M8087MD IMD3,IMD5 vs. Po T c=+25deg.C, Vdd=7.2V f=806MHz, Idq 1st stager=20mA Idq Final Stage=300mA TYPICAL PERFORMANCE (Tcase=+25C, ZG=ZL=50, unless otherwise specified) RA02M8087MD Effi vs. Po T c=+25deg.C, Vdd=7.2V f=806MHz, Idq 1...
Description RoHS Compliance , 806-869MHz 34dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO

File Size 141.05K  /  7 Page

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    MGF0952P

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGF0952P
OCR Text ...dBm) 30 25 20 15 Tc=80deg.c Tc=25deg.c Tc=-20deg.c Po v.s. Pin freq.=2.5GHz Id(RF) v.s. Pin freq.=2.5GHz 1.2 1.0 Ig(RF)(mA) 0.8 0.6 0.4 18 16 14 12 10 8 6 4 2 0 -2 5 13 12 11 10 9 8 7 6 5 4 3 5 Ig(RF) v.s. Pin freq.=2.5GHz ...
Description L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ]
From old datasheet system

File Size 1,403.39K  /  50 Page

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    MGFC36V5867

Mitsubishi Electric Semiconductor
Part No. MGFC36V5867
OCR Text ...stg Storage temperature *1 : Tc=25deg.C (Ta=25deg.C) Ratings -15 -15 3.75 -10 21 Unit V V A mA mA W deg.C deg.C Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but t...
Description 5.8-6.75GHz BAND 4W INTERNALLY MATCHED GaAs FET

File Size 243.27K  /  3 Page

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For 25deg Found Datasheets File :: 369    Search Time::1.125ms    
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