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ST Microelectronics
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Part No. |
STB11NM60 STB11NM60-1
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OCR Text |
...tage v ds = v gs , i d = 250a 345v r ds(on) static drain-source on resistance v gs = 10v, i d = 5.5a 0.4 0.45 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds > i d(on) x r ds(on)max, i... |
Description |
N-CHANNEL 600V - 0.4 OHM - 11A TO-220/TO-220FP/D2PAK/I2PAK MDMESH POWER MOSFET
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File Size |
537.05K /
12 Page |
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it Online |
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ST Microelectronics
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Part No. |
STB11NM80 STP11NM80
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OCR Text |
... voltage v ds =v gs ,i d = 250a 345v r ds(on) static drain-source on resistance v gs =10v,i d = 5.5a 0.35 0.40 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds >i d(on) xr ds(on)max, i d = 7.5 a ... |
Description |
N-CHANNEL 800 V - 0.35 OHM - 11 A TO-220/D2PAK MDMESH POWER MOSFET
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File Size |
311.99K /
8 Page |
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it Online |
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ST Microelectronics
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Part No. |
STB12NM50T4
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OCR Text |
...age v ds = v gs , i d = 250 a 345v r ds(on) static drain-source on resistance v gs = 10 v, i d = 6 a 0.30 0.35 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds > i d(on) x r ds(on)max, i... |
Description |
N-CHANNEL 500V - 0.30 OHM - 12A TO-220/TO-220FP/D2PAK/I2PAK MDMESH POWER MOSFET N-CHANNEL 500V - 0.30 OHM - 12A TO-220/TO-220FP/D2PAK/I2PAK MDMESH POWER MOSFET
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File Size |
528.73K /
12 Page |
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it Online |
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ST Microelectronics
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Part No. |
STB20NM50T4
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OCR Text |
...d voltage v ds =v gs ,i d =250a 345v r ds(on) static drain-source on resistance v gs = 10v, i d = 10a 0.20 0.25 ? symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds >i d(on) xr ds(on)max, i d = 10a 1... |
Description |
N-CHANNEL 550V @ Tjmax - 0.20 OHM - 20A TO-220/TO-220FP/D2PAK/I2PAK MDMESH MOSFET
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File Size |
339.56K /
12 Page |
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it Online |
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ST Microelectronics
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Part No. |
STB20NM50 STB20NM50-1 STP20NM50FP
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OCR Text |
...tage v ds = v gs , i d = 250a 345v r ds(on) static drain-source on resistance v gs = 10v, i d = 10a 0.20 0.25 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds > i d(on) x r ds(on)max, i ... |
Description |
N-CHANNEL 500V - 0.20 OHM - 20A TO-220/TO-220FP/D2PAK/I2PAK MDMESH POWER MOSFET
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File Size |
537.30K /
12 Page |
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it Online |
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ST Microelectronics
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Part No. |
STB20NM60-1 STB20NM60T4 STP20NM60 STP20NM60FP
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OCR Text |
... voltage v ds =v gs ,i d = 250a 345v r ds(on) static drain-source on resistance v gs =10v,i d = 10a 0.25 0.29 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds >i d(on) xr ds(on)max, i d = 10a 11 ... |
Description |
N-CHANNEL 600V - 0.25 OHM - 20A TO-220/TO-220FP/D2PAK/I2PAK MDMESH POWER MOSFET
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File Size |
540.02K /
12 Page |
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it Online |
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ST Microelectronics
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Part No. |
STB11NM80T4 STF11NM80
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OCR Text |
...age v ds = v gs , i d = 250 a 345v r ds(on) static drain-source on resistance v gs = 10v, i d =5.5 a 0.35 0.40 ? symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds > i d(on) x r ds(on)max, i ... |
Description |
N-CHANNEL 800 V - 0.35 OHM - 11 A TO-220/TO-220FP/D2PAK/TO-247 MDMESH MOSFET
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File Size |
363.08K /
14 Page |
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ST Microelectronics
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Part No. |
STD5NM60T4
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OCR Text |
... voltage v ds =v gs ,i d = 250a 345v r ds(on) static drain-source on resistance v gs =10v,i d = 2.5 a 0.9 1 w
3/13 stp8nm60, stp8nm60fp, std5nm60, std5nm60-1 electrical characteristics (t case =25c unless otherwise specified) dynamic swit... |
Description |
N-CHANNEL 650V @Tjmax- 0.9 OHM - 8A TO-220/TO-220FP/DPAK/IPAK MDMESH POWER MOSFET
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File Size |
593.36K /
13 Page |
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it Online |
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ST Microelectronics
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Part No. |
STD3NM50T4
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OCR Text |
...d voltage v ds =v gs ,i d =250a 345v r ds(on) static drain-source on resistance v gs = 10v, i d =1.5a 2.5 3 ? symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds >i d(on) xr ds(on)max, i d =3a 0.7 s c... |
Description |
N-CHANNEL 550V @Tjmax - 2.5 OHM - 3A DPAK/IPAK ZENER-PROTECTED MDMESH POWER MOSFET
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File Size |
270.97K /
10 Page |
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it Online |
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Price and Availability
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