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For 300 sec Found Datasheets File :: 41381 Search Time::2.734ms
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				HITACHI[Hitachi Semiconductor]
Part No.	HA12134AF HA12135AF HA12136AF 12136AF HA12134A HA12135A HA12136A
OCR Text	...6AF 580 450 Dolby Level (mVrms) 300 Package DP-16 FP-16DA DP-16 FP-16DA DP-16 FP-16DA Block Diagram REC IN GND PB IN BIAS 18 k 22 k ...sec. Symbol Vccmax Pd Topr Tstg TI Rating 16 250 -40 to +85 -55 to +125 260 Unit V mW C C C Note 1 T...
Description	Dolby B-Type Noise Reduction System
File Size	99.51K / 27 Page	View it Online	Download Datasheet

				Hi-Sincerity Microelectronics HSMC[Hi-Sincerity Mocroelectronics]
Part No.	HA8050 HA8050S
OCR Text	... hFE Rank hFE1 C 100~200 D 150~300 E 250-500 HA8050S HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characterist...sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * F...
Description	NPN EPITAXIAL PLANAR TRANSISTOR
File Size	35.62K / 4 Page	View it Online	Download Datasheet

				Hi-Sincerity Microelectronics HSMC[Hi-Sincerity Mocroelectronics] Hi-Sincerity Mocroelect...
Part No.	HBAT54C HBAT54S HBAT54A HBAT54
OCR Text	.................................. 300 mA Surge Forward Current (tp<1s)...........................................................................sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * F...
Description	Silicon Schottky Barrier Double Diodes
File Size	22.64K / 3 Page	View it Online	Download Datasheet

				Hi-Sincerity Microelectronics HSMC[Hi-Sincerity Mocroelectronics] Hi-Sincerity Mocroelectroni...
Part No.	HE8050S
OCR Text	... C 100-180 C1 100-180 >50 D 160-300 D1 160-300 >50 E 250-500 - HE8050S HSMC Product Specification HI-SINCERITY MICROELECTRONICS CO...sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454 *...
Description	NPN EPITAXIAL PLANAR TRANSISTOR
File Size	37.94K / 4 Page	View it Online	Download Datasheet

				HSMC[Hi-Sincerity Mocroelectronics]
Part No.	HMBT8050
OCR Text	...tion Of hFE Rank Range D9D 150-300 D9E 250-500 HMBT8050 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Character...sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * F...
Description	NPN EPITAXIAL TRANSISTOR
File Size	29.39K / 3 Page	View it Online	Download Datasheet

				Hi-Sincerity Microelectronics HSMC[Hi-Sincerity Mocroelectronics]
Part No.	HPN2907A PN2907A
OCR Text	...ax. -10 -50 -0.4 -1.6 -1.3 -2.6 300 8 Unit V V V nA nA V V V V Test Conditions IC=-10uA, IE=0 IC=-10mA, IB=0 IC=-10uA, IC=0 VCB=-50V, IC=0 V...sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * F...
Description	PNP EPITAXIAL PLANAR TRANSISTOR
File Size	36.46K / 4 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	ICM7170 ICM7170AIBG ICM7170AIDG ICM7170AIPG ICM7170AMDG ICM7170IBG ICM7170IDG ICM7170IPG ICM7170MDG
OCR Text	...ALE, tLA 400 150 50 0 250 300 25 - ns ns ns ns ns ns ns 50 0 100 300 100 30 400 - ns ns ns ns ns ns ns 50 30 30 - ...sec D2 1/10 sec D1 1/100 sec D0 ALARM Alarm/Compare Mask Bit Periodic Interrupt Mask Bits ...
Description	Microprocessor-Compatible, Real-Time Clock
File Size	77.04K / 13 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR
OCR Text	... 1.4 20 50 17 4.0 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A W W/C V A mJ V/ns C Thermal Resistance Parameter ...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 ...
Description	60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 60V Single N-Channel HEXFET Power MOSFET in a TO-262 package Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?
File Size	122.02K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1010E
OCR Text	... 1.4 20 50 17 4.0 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A W W/C V A mJ V/ns C Thermal Resistance Parameter ...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 ...
Description	Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?
File Size	143.91K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF
OCR Text	... 1.2 20 43 18 3.6 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A W W/C V A mJ V/ns C Thermal Resistance Parameter ...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 ...
Description	55V Single N-Channel HEXFET Power MOSFET in a TO-262 package 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A) Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A) Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?) Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?
File Size	144.82K / 10 Page	View it Online	Download Datasheet

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