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300-gd Datasheet PDF File

For 300-gd Found Datasheets File :: 13289 Search Time::1.093ms
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				Dynex Semiconductor
Part No.	DCR1560F20 DCR1560F24 DCR1560F26
OCR Text	... = 100v, di/dt = 10 a/s, - 300 s dv dr /dt = 20v/s linear to 67% v drm q s stored charge i t = 2 000a, ...gd gate non - trigger voltage at 4 0% v drm, t case = 125c tbd v i gt gate trig...
Description	Phase Control Thyristor
File Size	630.52K / 9 Page	View it Online	Download Datasheet

				IXYS, Corp.
Part No.	MCK500-14IO1 MDC500-14IO1
OCR Text	...te current (non-repetitive) 4) 300 a/s v rgm peak reverse gate voltage 5 v p g(av) mean forward gate power 4 w p gm peak forward gate power...gd gate controlled turn-on delay time - 0.6 1.5 t gt turn-on time - 1.2 2.5 i fg = 2 a, t r = 0.5 ...
Description	1294 A, 1400 V, SCR MODULE-7 1294 A, 1400 V, SCR MODULE-5
File Size	436.23K / 11 Page	View it Online	Download Datasheet

				eupec GmbH
Part No.	T2001N
OCR Text	... g /dt = 6 a/s (di t /dt) cr 300 a/s kritische spannungssteilheit critical rate of rise of off-state voltage t vj = t vj max , v d =...gd max. max. 20 10 ma ma nicht zndende steuerspannung gate non-trigger voltage t vj = t vj m...
Description	Phase Control Thyristor
File Size	270.34K / 9 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	T590N
OCR Text	...j = 25c, v d = 12v i h max. 300 ma einraststrom latching current t vj = 25c, v d = 12v, r gk 10 ? i gm = 1 a, di g /dt = ...gd max. 4 s prepared by: h.sandmann date of publication: 2008-09-17 approved by: m.leifeld...
Description	Netz-Thyristor Phase Control Thyristor
File Size	270.87K / 10 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FQN1N50CTA FQN1N50C
OCR Text	..., 1/8" from case for 5 seconds 300 c thermal characteristics symbol parameter typ max unit r jl thermal resistance, junction-to-lead (not...gd gate-drain charge -- 2.9 -- nc drain-source diode characteristics and maximum ratings i s maximum...
Description	N-Channel QFETMOSFET 500V, 0.38A, 6 N-Channel QFET MOSFET 500 V, 0.38 A, 6 Ohm
File Size	1,801.51K / 8 Page	View it Online	Download Datasheet

				Jewel Hill Electronic Co., Ltd.
Part No.	NUS5530MNR2G
OCR Text	... 5. pulse test: pulse width 300 s, duty cycle 2%. 6. guaranteed by design, not subject to production testing. nus5530mn http:/...gd q gs i d = ? 3.9 a t j = 25 c q gd /q gs = 3.0 figure 8. diode forward voltage versus curren...
Description	Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor 3.9 A, 20 V, 0.083 ohm, P-CHANNEL, Si, POWER, MOSFET
File Size	156.21K / 9 Page	View it Online	Download Datasheet

				Kersemi Electronic Co., Ltd.
Part No.	FQPF10N60C FQP10N60C
OCR Text	... 1/8 " from case for 5 seconds 300 c symbol parameter fqp10n60c fqpf10n60c units r jc thermal resistance, junction-to-case 0.8 2.5 c / w r...gd gate-drain charge -- 18.5 -- nc drain-source diode characteristics and maximum ratings i s maximu...
Description	600V N-Channel MOSFET
File Size	1,016.70K / 9 Page	View it Online	Download Datasheet

				Kersemi Electronic Co., Ltd.
Part No.	FQPF12N60C FQP12N60C
OCR Text	... 1/8 " from case for 5 seconds 300 c symbol parameter fqp12n60c fqpf12n60c units r jc thermal resistance, junction-to-case 0.56 2.43 c / w...gd gate-drain charge -- 21 nc drain-source diode characteristics and maximum ratings i s maximum con...
Description	600V N-Channel MOSFET
File Size	1,064.41K / 9 Page	View it Online	Download Datasheet

For 300-gd Found Datasheets File :: 13289 Search Time::1.093ms
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