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SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
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| Part No. |
HYM368020GS-60 HYM368020S-60 Q67100-Q985 HYM368020S Q67100-Q2007 SIEMENSAG-Q67100-Q985
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| OCR Text |
...8 31 A9 32 RAS3 33 RAS2 34 DQ26 35 DQ8 36 DQ17 37 DQ35 38 VSS 39 CAS0 40 CAS2 41 CAS3 42 CAS1 43 RAS0 44 RAS1 45 N.C. 46 WE 47 N.C. 48 DQ9 4...60 DQ14 61 DQ33 62 DQ15 63 DQ34 64 DQ16 65 N.C. 66 PD0 67 PD1 68 PD2 69 PD3 70 N.C. 71 VSS 72
A0-... |
| Description |
8M x 36 Bit FPM DRAM Module with Parity
8M x 36 Bit DRAM Module with Parity
8M x 36-Bit Dynamic RAM Module 8M X 36 FAST PAGE DRAM MODULE, 60 ns, SMA72
8M x 36-Bit Dynamic RAM Module 8米36位动态随机存储器模块
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| File Size |
101.65K /
10 Page |
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it Online |
Download Datasheet
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Fujitsu Limited
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| Part No. |
MB814100C-60 MB814100C-70
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| OCR Text |
...14100C-70 70 ns max. 20 ns max. 35 ns max. 125 ns min. 45 ns min. 297 mW max.
11 mW max. (TTL level)/5.5 mW max. (CMOS level) * * * * Com...60/MB814100C-70
s ABSOLUTE MAXIMUM RATINGS (See WARNING)
Parameter Voltage at any pin relative to ... |
| Description |
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4 M ×1 位快速页面存取模式动态RAM)
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4 M ×1位快速页面存取模式动态RAM)
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| File Size |
272.86K /
24 Page |
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it Online |
Download Datasheet |
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Fujitsu Limited
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| Part No. |
MB814400C-60 MB814400C-70
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| OCR Text |
...5 ns max. 20 ns max. 30 ns max. 35 ns max. 110 ns min. 125 ns min. 40 ns min. 45 ns min. 336 mW max. 297 mW max. 11 mW max. (TTL level)/5.5 ...60/MB814400C-70
s ABSOLUTE MAXIMUM RATINGS (See WARNING)
Parameter Voltage at any pin relative to ... |
| Description |
CMOS 1 M ×4BIT
Fast Page Mode DRAM(CMOS 1 M ×4 位快速页面存取模式动态RAM)
CMOS 1 M ×4 BIT
Fast Page Mode DRAM(CMOS 1 M ×4 位快速页面存取模式动态RAM)
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| File Size |
327.16K /
27 Page |
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it Online |
Download Datasheet |
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Fujitsu Limited
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| Part No. |
MB81V4100C-60 MB81V4100C-70
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| OCR Text |
...5 ns min. 20 ns min. 30 ns max. 35 ns max. 110 ns max. 125 ns max. 40 ns min. 45 ns min. 220 mW max. 195 mW max. 7.2 mW max. (TTL level)/3.6...60/MB81V4100C-70
s ABSOLUTE MAXIMUM RATINGS (See WARNING)
Parameter Voltage at any pin relative to... |
| Description |
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4 M ×1 位快速页面存取模式动态RAM)
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| File Size |
240.16K /
23 Page |
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it Online |
Download Datasheet |
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Fujitsu Limited
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| Part No. |
MB81V4400C-60 MB81V4400C-70
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| OCR Text |
...5 ns min. 20 ns min. 30 ns max. 35 ns max. 110 ns max. 125 ns max. 40 ns min. 45 ns min. 220 mW max. 195 mW max. 7.2 mW max. (LVTTL level)/3...60/MB81V4400C-70
s ABSOLUTE MAXIMUM RATINGS (See WARNING)
Parameter Voltage at any pin relative to... |
| Description |
CMOS 1M x 4 Bit Fast Page Mode Dynamic RAM(CMOS 1M x 4位快速页模式动态RAM)
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| File Size |
302.15K /
26 Page |
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it Online |
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SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
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| Part No. |
HYM72V2005GS-60 HYM72V2005GS-50 HYM72V2005GS-50-
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| OCR Text |
...e time 50 18 30 84 20 -60 60 20 35 104 25 ns ns ns ns ns
* * * *
* * * * * * * * * * *
Single + 3.3V 0.3 V supply CAS-before-RAS refresh, RAS-only refresh Decoupling capacitors mounted on substrate All inputs, outputs and clock fu... |
| Description |
-2M x 72-Bit EDO-DRAM Module
2M x 72-Bit EDO-DRAM Module (ECC - Module)
2M x 72-Bit EDO-DRAM Module 2M X 72 EDO DRAM MODULE, 50 ns, DMA168
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| File Size |
65.27K /
11 Page |
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it Online |
Download Datasheet |
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SIEMENS AG
Infineon Technologies AG
http://
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| Part No. |
HYB3116400BJ-60 HYB3116400BJ-50 HYB3117400BJ-50 HYB3117400BJ-60 HYB3116400BJ-70 HYB3117400BJ-70 HYB3117400BT-60 HYB3116400BT-60 HYB3116400BTL-70 HYB3116400BT-70 HYB3116400BT-50
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| OCR Text |
... access time from address 25 30 35 ns t rc read/write cycle time 90 110 130 ns t pc fast page mode cycle time 35 40 45 ns 3.3v 4m x 4-bit dynamic ram advanced information hyb3116400bj/bt(l) -50/-60/-70 hyb3117400bj/bt(l) -50/-60/-70
sem... |
| Description |
3.3V 4M x 4-Bit Dynamic RAM 4M X 4 FAST PAGE DRAM, 50 ns, PDSO26
4M X 4 FAST PAGE DRAM, 70 ns, PDSO24 0.300 INCH, PLASTIC, TSOP2-26/24
4M X 4 FAST PAGE DRAM, 70 ns, PDSO24 0.300 INCH, PLASTIC, SOJ-26/24
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| File Size |
256.13K /
26 Page |
View
it Online |
Download Datasheet |
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