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Intersil, Corp. INTERSIL[Intersil Corporation]
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Part No. |
HGTG20N120C3D G20N120
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OCR Text |
...E OF THE FOLLOWING U.S. PATENTS 4,364,073 4,466,176 4,587,713 4,620,211 4,641,162 4,694,313 4,794,432 4,809,047 4,860,080 4,901,127 4,969,02...720V, TJ = 125oC, RGE = 3.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Sp... |
Description |
45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 45 A, 1200 V, N-CHANNEL IGBT, TO-247 45A/ 1200V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
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File Size |
97.30K /
8 Page |
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it Online |
Download Datasheet |
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INTERSIL[Intersil Corporation]
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Part No. |
HGTG20N120 HGTG20N120E2 G20N120
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OCR Text |
... OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641 4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,31... |
Description |
34A/ 1200V N-Channel IGBT 34A, 1200V N-Channel IGBT
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File Size |
167.11K /
5 Page |
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it Online |
Download Datasheet |
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STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
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Part No. |
STP6NB90FP STP6NB90 6444
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OCR Text |
...900 900 30 5.8 3.6 23 135 0.92 4.5 -65 to 150 150
( 1) ISD 6, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX
Un it V V V
5.8(*) 3.6(*) 2...720V ID = 6 A R G = 4.7 V GS = 10 V Min. T yp. 15 15 25 Max. Unit ns ns ns
SOURCE DRAIN DIODE
S... |
Description |
N - CHANNEL 900V - 1.7ohm - 5.8A - TO-220/TO-220FP PowerMESH MOSFET -频道900V - 1.7ohm - 5.8A - TO-220/TO-220FP PowerMESH MOSFET N - CHANNEL 900V - 1.7 - 5.8A - TO-220/TO-220FP PowerMESH TM MOSFET From old datasheet system N - CHANNEL 900V - 1.7ohm - 5.8A - TO-220/TO-220FP PowerMESH MOSFET
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File Size |
108.12K /
9 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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